Infineon Technologies CY62128ELL-45ZAXIT

CY62128ELL-45ZAXIT Cypress SRAM Summary

The CY62128ELL-45ZAXIT from Cypress Semiconductor Corp is a high-performance static RAM (SRAM) device, designed for systems requiring reliable, low-power memory. Organized as 128 K × 8 bits, this 1-Mbit SRAM delivers fast access times and industry-standard parallel interfaces. The device is offered in a lead-free 32-pin sTSOP package, as part of the MoBL® (More Battery Life) SRAM family, making it especially suitable for battery-powered and portable electronics. It features best-in-class low standby and active power characteristics, broad operating temperature ranges, and compatibility with established SRAM pinouts.

Main Attributes of CY62128ELL-45ZAXIT

The CY62128ELL-45ZAXIT is optimized for speed and energy efficiency, catering to industrial, automotive, and consumer applications. Key specifications and attributes include:

Speed: 45 ns access time, ensuring minimal latency for time-critical operations.

Power Consumption: Typical standby current of 1 μA and typical active current of 1.3 mA at 1 MHz, supporting ultra-low standby and operating power.

Voltage Range: Operates from 4.5 V to 5.5 V, making it suitable for legacy 5 V systems.

Pin Compatibility: Drop-in replacement compatibility with the CY62128B series, easing upgrades or multi-sourcing.

Memory Expansion: Built-in features such as dual chip enables (CE1, CE2) and output enable (OE) simplify the creation of larger memory arrays.

Automatic Power Down: Reduces power when the device is not actively accessed.

CMOS Technology: Employed for optimal speed-power balance and noise immunity.

Temperature Grades: Covers -40 °C to +85 °C (industrial and automotive-A) and up to +125 °C (automotive-E).

Functional Overview and Working Principles

Internally, the CY62128ELL-45ZAXIT is arranged as 128K × 8-bit cells, interfaced via eight data I/O lines and seventeen address lines. It implements advanced CMOS circuitry to minimize power usage in both active and standby states. Data is read or written using standard SRAM control signals: chip enables (CE1 active LOW, CE2 active HIGH), write enable (WE active LOW), and output enable (OE active LOW).

Write Cycle: When both chip enables are active and WE is LOW, data applied to the I/O pins (I/O0–I/O7) is written to the address selected (A0–A16).

Read Cycle: When chip enables are active, WE is HIGH, and OE is LOW, the contents of the addressed location appear on the I/O pins.

High-Z State: When the device is deselected (CE1 HIGH or CE2 LOW), or outputs are disabled (OE HIGH or during write), the I/Os enter a high-impedance state, allowing for bus sharing in larger memory architectures.

Standby: Standby mode is automatically entered when the device is deselected, reducing typical power consumption by more than 99%.

Electrical Characteristics and Power Handling

The CY62128ELL-45ZAXIT offers robust electrical performance optimized for reliability and energy efficiency:

Maximum Ratings: Safe operation up to +125 °C; storage from -65 °C to +150 °C.

Noise Immunity: Designed for robust operation in industrial and automotive environments; ESD protection above 2000 V and latch-up immunity above 200 mA.

Power Supply: Nominal operation at 5 V with tolerance up to 5.5 V. Supply must ramp-up linearly to avoid logic errors.

Power Down: Automatic reduction of current when not selected; only chip-enable pins need to be at CMOS levels to guarantee lowest standby current.

Data Retention: Reliable hold of stored data during power-down with minimal voltage, supporting backup battery designs.

Packaging Types and Pin Layout

The CY62128ELL-45ZAXIT is available in several industry-standard packages for design flexibility:

32-pin sTSOP, SOIC, and TSOP Type I packages facilitate both new designs and drop-in replacement scenarios.

Pinout: A standardized layout enables straightforward integration on existing parallel SRAM footprints.

NC (no connect) pins are electrically isolated to ease routing and prevent accidental shorts in multi-board layouts.

Use Cases for CY62128ELL-45ZAXIT

Given its combination of speed, ultra-low power, and ruggedness, the CY62128ELL-45ZAXIT is ideal for:

Portable battery-powered systems (data loggers, handheld diagnostic tools, metering equipment)

Industrial controllers and automation products where low power standby and fast access are critical

Automotive subsystems requiring extended temperature operation (-40 °C to +125 °C, qualified for automotive-E grade)

Memory expansion in legacy 5 V embedded systems

Design Recommendations and Connection Standards

Selection engineers should note that the CY62128ELL-45ZAXIT is TTL-level input compatible, aligning with most processor interfaces. However, for systems requiring CMOS input thresholds, the device may not be suitable; consult the electrical characteristics and consider alternate models if CMOS-level compatibility is required.

I/O Protection: All input signals should be limited to the specified max/min voltages.

Package Thermal Design: Consider package thermal resistance and ambient temperature for high-density or enclosed environments.

Memory Expansion: Dual chip enables allow for straightforward implementation of larger SRAM arrays without extensive glue logic.

Possible Alternative/Substitute Models for CY62128ELL-45ZAXIT

To safeguard supply chain resilience or plan for alternative sourcing, design engineers and procurement teams can evaluate the following:

CY62128B series from Cypress – direct pin-compatible predecessor

Parallel 1-Mbit SRAMs from other suppliers (e.g., Alliance Memory AS6C1008, ISSI IS62C1024 series) – assess electrical and timing compatibility closely, especially for power-down and standby modes

Review recommended alternatives in Cypress Application Note AN6081 for interfacing with processors requiring CMOS I/P compliance.

When substituting, verify the device’s speed, supply voltage range, and I/O characteristics against design requirements. Package options and physical dimensions should also be cross-checked to ensure drop-in compatibility.

Conclusion

The CY62128ELL-45ZAXIT from Cypress Semiconductor exemplifies a robust, ultra-low power 1-Mbit parallel SRAM, engineered for reliability, speed, and long battery life across industrial and automotive operating ranges. Its optimized power profiles, wide temperature grades, and flexible packaging enable seamless use in demanding electronic systems, particularly legacy designs needing 5 V SRAM. By thoroughly understanding its functional behavior, interface, and application scope—as well as alternative sourcing options—design and procurement professionals can successfully integrate the CY62128ELL-45ZAXIT into both current and future platforms.