Infineon Technologies CY62128ELL-45SXIT

CY62128ELL-45SXIT MoBL SRAM Product Summary

The CY62128ELL-45SXIT, designed and manufactured by Infineon Technologies, is a high-performance, ultra-low-power 1-Mbit (128 K × 8) asynchronous static RAM (SRAM) device belonging to the MoBL® (More Battery Life) family. Packaged in a standard 32-SOIC footprint (among other available options), this device is tailored for battery-powered and portable applications demanding exceptional power efficiency and robust operational reliability. By leveraging advanced CMOS technology, the CY62128ELL-45SXIT caters to a wide spectrum of embedded and industrial systems, ensuring effective integration with its parallel interface.

CY62128ELL-45SXIT Main Characteristics

The CY62128ELL-45SXIT is distinguished by a suite of attributes that position it at the top tier among low-power SRAM offerings:

Very high speed operation with access times as fast as 45 ns

Broad voltage range operation from 4.5 V to 5.5 V

Ultra-low standby current (typical 1 μA, max 4 μA for industrial grade), preserving battery longevity in sleep states

Ultra-low active current (typical 1.3 mA at f = 1 MHz)

Automatic power-down when deselected to minimize total system quiescent consumption

Pin compatibility with the CY62128B series for simplified design migration

Easy memory expansion enabled by flexible chip enable and output enable controls ($\overline{CE}_1$, $CE_2$, $\overline{OE}$)

RoHS-compliant, offered in Pb-free 32-pin SOIC, STSOP, and TSOP I packages

Multiple temperature ratings: industrial (-40 °C to +85 °C), automotive A (-40 °C to +85 °C), and automotive E (-40 °C to +125 °C)

CY62128ELL-45SXIT Operation Principles and Internal Design

The CY62128ELL-45SXIT employs a classic asynchronous SRAM architecture, organized as 128K words by 8 bits, optimized for processor interfacing without refresh cycles. Advanced circuit design approaches provide outstanding power efficiency, particularly when the device shifts into standby mode via chip enable controls, where power consumption drops by over 99%. Data is written to the device by asserting both chip enable ($\overline{CE}_1$ LOW and $CE_2$ HIGH) and write enable ($\overline{WE}$ LOW), at which time I/O data is latched to the addressed memory location.

Read operations are similarly straightforward, with data valid on the I/O bus when chip enable and output enable are active, and write enable is deasserted. The eight I/O lines (I/O$_0$ through I/O$_7$) enter a high-impedance state during deselection, output disable, or active write operations, aiding bus sharing in multi-device memory arrays. The automatic power-down mode further reduces active system power when the memory is not in use.

For processor interfacing, the CY62128ELL-45SXIT supports TTL input levels but is not suitable for connections that require true CMOS voltage thresholds. In mixed-voltage systems, designers should carefully consider logic level compatibility as detailed in the Electrical Characteristics section.

CY62128ELL-45SXIT Electrical and Environmental Parameters

The electrical profile of the CY62128ELL-45SXIT is engineered for rugged and reliable system designs:

Supply voltage (V$_{CC}$): Operates from 4.5 V to 5.5 V

Maximum standby current: 4 μA (Industrial temperature range)

Maximum active current: 1.3 mA (at 1 MHz, typical conditions)

Input voltage tolerance: up to V$_{CC}$ + 0.5 V (for less than 20 ns pulse durations)

Output high voltage (VOH) suitable for most TTL logic, but may not meet all CMOS processor minimum V$_{IH}$ levels; see application notes for alternate interfacing strategies

Wide operating temperature grades allow deployment in commercial, industrial, and automotive applications, with an automotive E grade extending operation to +125 °C

High immunity to ESD and latch-up: > 2001 V (MIL-STD-883, Method 3015), > 200 mA latch-up current threshold

Data retention voltage and waveform specifications ensure robust non-volatile operation in backup supply scenarios

CY62128ELL-45SXIT Pinout Details and Package Variants

To maximize design flexibility and ease of integration, the CY62128ELL-45SXIT is available in several industry-standard package types:

32-pin Small Outline Integrated Circuit (SOIC), 450 mil

32-pin Shrink Thin Small Outline Package (STSOP): 8 × 13.4 × 1.2 mm

32-pin Thin Small Outline Package (TSOP) Type I: 8 × 20 × 1.0 mm

All versions share a common pinout, simplifying PCB layout, design upgrades, and volume manufacturing. NC (no connect) pins are left unconnected on the die, supporting forward and backward design compatibility. Each package option presents an optimal balance of PCB area, device height, and thermal performance, suitable for both high-density consumer and space-constrained industrial applications.

CY62128ELL-45SXIT Timing, Switching Details, and Modes of Operation

The CY62128ELL-45SXIT provides clear timing specifications and control logic to optimize interface performance:

Address access time ($t_{AA}$) and chip enable access time ($t_{ACE}$) down to 45 ns ensure suitability for fast parallel data operations

Output enable to valid data time ($t_{DOE}$) as short as 25 ns (at specified C$_L$ loading)

Power is minimized dynamically through automatic power-down on deselection (chip not selected, standby), and static when system clocks are halted

High-impedance and active output timing parameters guarantee reliable multi-device bus arbitration

Three independent write cycles supported: WE controlled, CE controlled, and OE LOW, for maximum compatibility with diverse controller interfaces

Detailed read and write timing diagrams cover both address-controlled and enable-controlled operation for system designers

These characteristics are essential for qualifying the memory for use alongside a broad range of microcontrollers, programmable logic devices, and DSPs in both synchronous and asynchronous memory map integration.

CY62128ELL-45SXIT Application Suitability and Recommended Use Cases

The CY62128ELL-45SXIT is engineered to excel in applications where low power, fast access, and high reliability are critical. Example scenarios include:

Portable and battery-powered instrumentation where standby current directly impacts operational battery life

Data buffers and memory arrays in industrial control systems requiring wide temperature range stability

Automotive electronics for logging, fail-safe storage, and real-time state retention under extended environmental stress

Consumer health and fitness devices, point-of-sale terminals, metering, and connected IoT nodes demanding always-on, instant access nonvolatile storage

Memory expansion for legacy processor systems, benefiting from pin compatibility and easy migration from prior CY62128B generations

By supporting both rapid active access and prolonged low-power idle states, the CY62128ELL-45SXIT ensures longevity and power savings in smart designs.

CY62128ELL-45SXIT Comparable or Substitute Models

Selecting a direct equivalent or pin-compatible replacement for the CY62128ELL-45SXIT can streamline procurement and secure long-term supply. Notable options include:

Infineon's own CY62128B series, providing backward compatible pinout and control interface, with slight variations in power and performance profiles

Alternative automotive and industrial-grade low-power SRAM offerings matching 1-Mbit, ×8 parallel architecture, and 32-pin SOIC/TSOP footprints, subject to validation of electrical and timing parameters in your application

For applications demanding true CMOS logic thresholds, consider SRAMs specifically rated for full CMOS I/P compatibility as detailed in Infineon’s application notes (such as Application Note AN6081)

Always reference the full datasheet and validate critical parameters like voltage thresholds, timing compatibility, package outline, and thermal performance before substituting or cross-qualifying a part.

Conclusion

The CY62128ELL-45SXIT MoBL SRAM from Infineon Technologies delivers an outstanding combination of speed, ultra-low power operation, and industrial reliability. Its broad voltage and temperature ranges, industry-standard packaging, and compatibility with previous-generation devices make it a prime candidate for engineers seeking robust, low-power SRAM for demanding applications. By carefully considering the device’s electrical, packaging, and timing specifications—as well as available equivalents—engineers and procurement professionals can ensure optimal product selection for both new designs and legacy replacements.