Infineon Technologies CY62128ELL-45ZAXI

CY62128ELL-45ZAXI SRAM from Infineon Technologies Product Summary

For engineers searching for a reliable, ultra-low power static RAM solution, Infineon Technologies’s CY62128ELL-45ZAXI stands out as a robust 1Mbit asynchronous parallel SRAM. Organized as 128K × 8 bits, this device is specifically engineered to meet the stringent requirements of battery-powered, industrial, and automotive electronics. Leveraging CMOS process technology and optimized logic design, the CY62128ELL-45ZAXI delivers outstanding speed with a 45 ns access time, while minimizing active and standby current consumption. Supplied in a compact 32-pin STSOP package—alongside SOIC and TSOP Type I options—it offers versatility for designs where footprint, power, and performance converge.

Main Attributes and Advantages of CY62128ELL-45ZAXI

The CY62128ELL-45ZAXI’s most prominent attribute is its balance of speed and low-power operation. At full performance, it achieves access times of 45 ns, making it suitable for time-critical data buffering, processor cache, or general memory expansion. It supports three industrially relevant temperature grades—industrial (-40°C to +85°C), automotive-A (-40°C to +85°C), and automotive-E (-40°C to +125°C)—enabling deployment in demanding ambient conditions.

Power consumption is minimized through advanced CMOS logic resulting in active currents as low as 1.3 mA at 1 MHz, and standby currents down to a typical 1 μA (maximum 4 μA). When not actively accessed, the SRAM enters an ultra-low power standby mode via automatic power-down logic. This reduces battery drain for portable equipment, safeguarding operating time without sacrificing data retention.

Other highlights include a wide operating voltage range (4.5 V to 5.5 V), full pin compatibility with the CY62128B series for straightforward system upgrades, and compatibility with TTL input/output levels—ideal for direct interfacing with legacy microcontrollers and processors. The inclusion of straightforward memory expansion signals (\(\overline{CE}_1\), \(CE_2\), \(\overline{OE}\)) simplifies design scalability in memory-intensive systems.

CY62128ELL-45ZAXI Functional Details and Operational Principles

Internally, the CY62128ELL-45ZAXI comprises 128K addresses each storing 8 bits—easily addressing with standard processor addressing schemes. Data is transferred via eight I/O pins, which automatically enter a high-impedance state when the chip is deselected, disabled, or during write cycles, ensuring safe bus sharing and signal integrity.

Read operations require \(\overline{CE}_1\) LOW, \(CE_2\) HIGH, \(\overline{OE}\) LOW, and \(\overline{WE}\) held HIGH. Data at the addressed memory appears on the I/O pins for processor use.

Write operations similarly use \(\overline{CE}_1\) LOW, \(CE_2\) HIGH, and \(\overline{WE}\) LOW, with valid data latched from the I/O pins into the addressed location. The automatic power down circuitry enables the device to switch into standby whenever it is deselected, further reducing power in idle phases.

While I/O pins support TTL levels, CY62128ELL-45ZAXI is not suited for processors requiring CMOS (V_IH ≥ 3.5 V) input levels. (See Infineon Application Note AN6081 for technical interfacing details where voltage compatibility is critical.)

CY62128ELL-45ZAXI Pin Layout and Packaging Variants

To accommodate a variety of board-level designs, CY62128ELL-45ZAXI is offered in multiple package configurations:

STSOP (Shrink Thin Small Outline Package): 32-pin

SOIC (Small Outline Integrated Circuit): 32-pin

TSOP Type I (Thin Small Outline Package): 32-pin

Each package presents standardized JEDEC outlines, simplifying automated assembly and ensuring mechanical compatibility with existing layouts. Pinouts for address, data, control (chip enables, output enable, write enable), and power signals are identically mapped across these variants, supporting seamless migration between package types as production requirements evolve.

CY62128ELL-45ZAXI Electrical Performance and Thermal Properties

The CY62128ELL-45ZAXI exhibits robust input and output protection and tolerances, with supply voltage ranges from 4.5 V to 5.5 V. Inputs and outputs withstand up to 6.0 V (V_CC + 0.5 V) under brief pulse conditions. Maximum output sink current is rated at 20 mA, and the device passes MIL-STD-883 ESD standards (>2001 V) and latch-up criteria (>200 mA).

Designed to sustain harsh environments, the memory supports storage temperatures from -65°C to +150°C, and operation from -55°C to +125°C (dependent on grade). Package thermal resistance and capacitance figures aid in thermal modeling for dense layouts or elevated ambient conditions.

CY62128ELL-45ZAXI Timing Characteristics and Data Storage Specifications

Fast access and cycle times are critical to the CY62128ELL-45ZAXI’s appeal. With access times as tight as 45 ns (address or chip enable controlled), and data output enable times down to 25 ns, the part is a prime choice for systems requiring near-real-time data storage.

Switching waveforms and logic truth tables prescribe all timing relationships for reliable read/write operations under varying signal conditions. The device supports data retention in standby, provided the chip enable pins are maintained at specified CMOS logic levels.

Reliable data retention is ensured under all operating voltages above the retention threshold, with comprehensive AC and DC test methodologies outlined in the documentation. For systems with periodic power interruptions or sleep cycles, the memory continues to preserve bit integrity as long as chip enables meet retention criteria.

Design Considerations for CY62128ELL-45ZAXI in Engineering Applications

Engineers utilizing CY62128ELL-45ZAXI benefit from ease of integration and scalability. The part’s automatic low-power modes foster battery conservation in portable medical, industrial data loggers, and automotive telematics. Its pin compatibility with CY62128B enables straightforward upgrades in legacy systems without PCB redesign.

Designers should verify processor I/O logic compatibility when connecting to newer CMOS logic families. Careful attention is advised to chip enable, output enable, and write enable signal timing—especially in bus-sharing or multi-device systems—to guarantee high-impedance states during contention and avoid data collisions.

Package options allow adaptation for high-density board designs, with TSOP and STSOP suited to compact enclosures and SOIC tailored for standard through-hole processes or low-profile assemblies.

Alternative or Substitute Models for CY62128ELL-45ZAXI

In design iterations or component qualification, evaluating pin-compatible alternatives is strategic. CY62128EL-45ZAXI is a direct predecessor with similar performance and form factor, making cross-upgrades seamless.

For additional voltage or interface requirements, engineers may consider other Infineon Technologies MoBL SRAM models within the CY62128E series or reference Application Note AN6081 for guidance on alternatives compatible with CMOS input levels. Always confirm package, speed grade, and temperature range alignment to maintain system performance and reliability.

Conclusion

: CY62128ELL-45ZAXI Infineon Technologies SRAM in modern designs

The CY62128ELL-45ZAXI from Infineon Technologies offers a compelling blend of speed, ultra-low power consumption, robust environmental ratings, and flexible package options—meeting the diverse needs of embedded system designers and procurement professionals. Its straightforward integration, reliable performance, and focus on battery life make it a preferred choice for portable devices, industrial controllers, and automotive electronics. With clear logic design, comprehensive electrical specifications, and ease of scalability, CY62128ELL-45ZAXI solidifies its position as a go-to memory solution for next-generation applications requiring both energy efficiency and high data integrity.