Infineon Technologies CY62128ELL-45SXI

CY62128ELL-45SXI SRAM Summary by Infineon Technologies

CY62128ELL-45SXI, developed by Infineon Technologies, is a high-performance, ultra-low-power static random access memory (SRAM) device with 1Mbit capacity, organized as 128K x 8 bits. Designed for asynchronous operation, it serves a wide range of embedded applications where speed, reliability, and efficient power consumption are essential—particularly in battery-powered and portable systems. With a 45 ns access time and robust voltage tolerance, CY62128ELL-45SXI is suitable for industrial and automotive environments, offering broad compatibility for engineers considering memory options in demanding design scenarios.

Essential Attributes and Operating Details of CY62128ELL-45SXI

The CY62128ELL-45SXI leverages advanced CMOS process technology to deliver outstanding speed and minimal active current. Its core features include:

Fast access time: 45 ns (industrial/automotive-A), ensuring quick read and write operations for real-time applications.

Ultra-low power operation: Typical standby current of just 1 μA and typical active current of 1.3 mA at 1 MHz, significantly extending battery life in portable devices.

Automatic power-down: When not addressing memory, power consumption drops by more than 99%.

Flexible expansion: Easy scalability through Chip Enable (CE1, CE2) and Output Enable (OE) pins.

Compatibility: Interfaces with processors featuring TTL input levels.

Robust voltage range: Operation from 4.5V to 5.5V.

Industrial and automotive temperature functionality: −40°C to +85°C (industrial/automotive-A) and up to +125°C (automotive-E).

Engineers evaluating CY62128ELL-45SXI for design inclusion should note its high impedance outputs, which help minimize bus contention and ensure reliable operation in complex circuit architectures. When the device is deselected or during a write operation, the input/output pins enter a high-impedance state. The efficient power-down mode makes CY62128ELL-45SXI particularly attractive in scenarios requiring intermittent access to memory, such as handheld data loggers, instrument panels, or automotive ECUs.

Pinout Details and Package Variants for CY62128ELL-45SXI

CY62128ELL-45SXI is available in several surface-mount package options to suit a variety of PCB layouts:

32-SOIC (0.445", 11.30 mm width)

32-pin standard thin small outline package (STSOP)

32-pin TSOP Type I

Each package provides convenient pin-out for memory address, data I/O, and control signals, helping optimize board real estate and facilitating straightforward integration with MCUs and processors. The pin configuration supports standard memory expansion logic, making CY62128ELL-45SXI suitable for modular system upgrades or array implementations across industrial control, automotive, or consumer devices.

Electrical and Environmental Specifications of CY62128ELL-45SXI

CY62128ELL-45SXI provides solid electrical performance backed by comprehensive environmental compliance.

Supply voltage: 4.5V to 5.5V.

Input voltage ranges: −0.5V to Vcc + 0.5V.

Output voltage: up to Vcc (max) +0.5V in high impedance.

Output current: up to 20 mA (LOW).

Input/Output leakage currents: Typically ±1 μA (industrial), ±4 μA (automotive-E).

Supply current: max 16 mA active (industrial); up to 35 mA (automotive-E at max frequency).

RoHS3 and REACH compliant.

MSL 3 classification (168 hours), supporting robust reflow and handling procedures.

Storage temperature: −65°C to +150°C; operating ambient −40°C to +85°C (industrial/automotive-A) with extended up to +125°C (automotive-E).

These factors ensure that CY62128ELL-45SXI can be reliably integrated into assemblies requiring stringent environmental validation and regulatory compliance.

Performance Metrics of CY62128ELL-45SXI

Performance metrics of CY62128ELL-45SXI are well aligned with industry standards for asynchronous SRAM:

Read access time: 45 ns (industrial/automotive-A); 55 ns (automotive-E).

Write cycle time: 45 ns (industrial/automotive-A); 55 ns (automotive-E).

Output enable to data valid: 22 ns (industrial), 25 ns (automotive-E).

Chip enable to power-up: 0 ns (instantaneous).

These metrics make CY62128ELL-45SXI an excellent candidate for high-speed data buffering, look-up tables, or memory-mapped registers in complex digital systems.

Thermal Properties and Capacitance Information of CY62128ELL-45SXI

CY62128ELL-45SXI demonstrates efficient thermal characteristics, facilitating ease of integration into compact and dense electronic designs.

Junction-to-ambient thermal resistance: 48.67°C/W (SOIC), 32.56°C/W (STSOP), 33.01°C/W (TSOP).

Junction-to-case resistance: 25.86°C/W (SOIC), 3.59°C/W (STSOP), 3.42°C/W (TSOP).

Input capacitance: 10 pF (typical).

Output capacitance: 10 pF (typical).

These factors support predictable thermal behavior on multi-layer PCBs and ensure low signal delay and noise, crucial for precision memory operations in industrial and automotive contexts.

Power Management and Data Retention Features of CY62128ELL-45SXI

An essential aspect of CY62128ELL-45SXI is its data retention capability, particularly beneficial for battery-backed or intermittently powered applications.

Data retention voltage: minimum 2V.

Data retention current: typically 4 μA (industrial/automotive-A), 30 μA (automotive-E).

Power down achieved by deselecting chip, reducing consumption substantially.

Recovery from standby is swift, with instantaneous access times returning as soon as power is restored and chip enabled. This guarantees uninterrupted information preservation in low-energy scenarios such as key-off automotive systems or portable instrumentation.

Switching Performance of CY62128ELL-45SXI

The switching behavior of CY62128ELL-45SXI is engineered for high-speed operations, critical for applications needing rapid, frequent access cycles:

Read cycle: 45 ns minimum (industrial/automotive-A); 55 ns minimum (automotive-E).

Write cycle: 45 ns minimum (industrial/automotive-A); 55 ns minimum (automotive-E).

Output enable-to-data valid: 22 ns (industrial); 25 ns (automotive-E).

Chip enable-to-data valid: 45 ns (industrial); 55 ns (automotive-E).

These fast switching times support complex, timing-sensitive applications, ensuring fast availability of memory content during both read and write operations.

Alternative or Equivalent Products to CY62128ELL-45SXI

Product selection engineers might consider alternatives when design constraints change or when interfacing requirements evolve. Notably, CY62128ELL-45SXI is pin-compatible with CY62128B series, presenting a potential drop-in replacement in existing designs. If system architecture requires processors that mandate CMOS input levels—with a Vih minimum of 3.5V—Infineon's application note AN6081 recommends suitable alternatives. Careful review of input/output voltage requirements and performance metrics is advised when assessing equivalency, particularly for legacy systems or upgrades involving diverse processor interfaces.

Conclusion

Infineon Technologies’ CY62128ELL-45SXI SRAM offers engineers a versatile, reliable, and power-efficient solution for memory needs in demanding industrial and automotive applications. Its fast access times, low standby power, and robust environmental compliance make it a strong candidate for portable devices, instrumentation, and embedded systems. Thorough evaluation of package, electrical characteristics, and equivalent models ensures seamless design integration, supporting innovation and long-term reliability in mission-critical settings.