STMicroelectronics STW28N60M2

STW28N60M2 STMicroelectronics Power MOSFET Product Summary

Selecting power switching components is critical for high-efficiency and reliability in demanding applications. The STW28N60M2 from STMicroelectronics is an advanced N-channel Power MOSFET, belonging to the MDmesh™ M2 family. Designed for high-voltage, high-current environments, this device features a drain-source voltage rating of 600 V and a continuous drain current of 24 A (at Tc). Offered in a robust TO-247 package, the STW28N60M2 enables engineers to design converters and switching circuits that demand both power density and reliability.

STW28N60M2 STMicroelectronics Main Specifications

The STW28N60M2 leverages ST’s latest MDmesh™ M2 technology, optimized for low on-resistance and fast switching. Core features include:

Extremely low gate charge, which minimizes switching losses and enhances efficiency in fast-switching applications.

Excellent output capacitance (Coss) profile, supporting highly efficient energy transfer and consistent performance over a range of voltages.

100% avalanche tested, ensuring ruggedness for scenarios involving rapid transient voltages.

Integrated Zener diode protection for enhanced reliability, especially in susceptible environments.

These features collectively enable engineers to achieve higher efficiency, improve thermal management, and increase reliability in power conversion designs.

STW28N60M2 STMicroelectronics Electrical Specifications

Understanding absolute maximum ratings is essential for safe and robust circuit design. The STW28N60M2 is rated for:

Drain-source voltage (V_DS): 600 V

Continuous drain current (I_D, Tc = 25°C): 24 A

Pulsed drain current: Defined by the device’s safe operating area

Total Power Dissipation (Tc): 170 W

In addition, the device’s avalanche energy capability and source-drain diode ratings make it suitable for applications subject to high voltage spikes, endorsing its suitability for tough switching environments.

STW28N60M2 STMicroelectronics Electrical Properties

Performance parameters such as on-state resistance and switching times directly impact application efficiency and reliability. At room temperature (Tc = 25°C), typical characteristics include:

On-state resistance (R_DS(on)): 0.135 Ω (typical)

Static and dynamic behaviors are supported with detailed data such as gate threshold voltage, output capacitance, and switching time curves, enabling precise simulation and system optimization.

Engineers evaluating switching loss or transient behavior will appreciate the full suite of electrical curves provided, supporting robust component selection and circuit simulation.

STW28N60M2 STMicroelectronics Thermal Performance and Safe Operating Limits

Thermal management and safe operating area (SOA) analysis are critical when deploying high-current, high-voltage MOSFETs. The STW28N60M2 provides detailed SOA graphs and thermal impedance data for the TO-247 package. These specifications enable designers to validate whether their thermal solution and switching profiles fall safely within the device limits, preventing failure due to overheating or overcurrent during abnormal operating conditions.

STW28N60M2 STMicroelectronics Packaging Details

Physical integration and PCB layout considerations are addressed by the TO-247 package, designed for high-power applications with efficient heat dissipation. The device comes with comprehensive mechanical drawings and recommended footprints that aid engineers in designing PCBs for optimal performance and reliability.

The MDmesh™ M2 family also offers variants in D²PAK (TO-263), I²PAK, and TO-220 packages, providing flexibility for engineers to select the most suitable format for space and thermal constraints.

STW28N60M2 STMicroelectronics Typical Use Cases

The STW28N60M2’s combination of high voltage, substantial current capability, and optimized switching characteristics makes it well-suited to:

Switching applications in high-voltage converters and inverters

LCC (Inductor-Capacitor-Capacitor) and resonant converters used in efficient power supplies and lighting ballasts

Any scenario demanding fast, efficient, and reliable switching, with robust avalanche performance

Its MDmesh™ M2 technology is particularly beneficial in circuits aiming for high-density power conversion and high efficiency, such as industrial power supplies, solar inverters, and motor drives.

STW28N60M2 STMicroelectronics Compatible or Substitute Devices

For design flexibility and supply chain assurance, engineers may consider other MDmesh™ M2 family members:

STB28N60M2 (D²PAK)

STI28N60M2 (I²PAK)

STP28N60M2 (TO-220)

Each offers identical silicon performance characteristics but in alternate packages, allowing selection based on mechanical design and assembly preference. When substituting, it is crucial to verify the package type, thermal ratings, and PCB footprint compatibility. Engineers may also benchmark alternative manufacturers’ N-channel 600 V MOSFETs with similar R_DS(on) and current ratings, but device performance and reliability should always be validated against the STW28N60M2’s tested parameters.

Conclusion

The STW28N60M2 STMicroelectronics MDmesh™ M2 Power MOSFET stands out as a robust, high-performance component for power conversion applications needing high voltage and current handling. Its advanced switch technology, proven reliability, and flexible packaging options make it a premier choice for engineers confronted with stringent efficiency and reliability requirements. For both new designs and ongoing procurement, a thorough understanding of the STW28N60M2’s capabilities helps ensure long-term success in demanding electronic systems.