STMicroelectronics STW28N60DM2

Introduction to STW28N60DM2 Power MOSFET

The STW28N60DM2 from STMicroelectronics is a high-voltage, N-channel power MOSFET, specifically designed to address the needs of engineers developing high-efficiency power conversion solutions. Belonging to the MDmesh™ DM2 series, this device is tailored for fast-recovery applications and offers a compelling balance of performance parameters for use in demanding switching environments. The STW28N60DM2 operates with a drain-to-source voltage (Vds) rating of 600 V and a continuous drain current capability of 21 A (at case temperature, Tc = 25°C). Housed in the industry-standard TO-247-3 through-hole package, this MOSFET combines high-current handling, robust thermal performance, and low on-resistance, making it an optimal selection for a variety of power topologies.

Main attributes and application benefits of the STW28N60DM2

The STW28N60DM2 is engineered with several features that cater directly to the high-efficiency requirements of modern power electronics. Its low typical Rds(on) of 0.13 Ω and fast-recovery body diode enable minimized conduction losses and efficient switching, essential for bridge topologies such as zero-voltage-switched (ZVS) phase-shift converters. The device’s extremely low gate charge (Qg, max 34 nC) and low input capacitance (Ciss, max 1500 pF) further facilitate high-speed, low-loss switching, ensuring compatibility with high-frequency designs.

Additionally, the MOSFET's fast-recovery body diode with low reverse recovery charge (Qrr) and time (tr) are highly advantageous in reducing electromagnetic interference and minimizing switching loss in resonant and hard-switched topologies. The inherent ruggedness against high dv/dt events (up to 50 V/ns) provides design assurance for engineers working in harsh electrical environments.

Electrical and thermal specifications for STW28N60DM2

The STW28N60DM2 is specified for a robust set of maximum ratings, with a Vds of 600 V, continuous drain current of 21 A (Tc = 25°C), and a pulsed drain current capability of 84 A. The MOSFET can dissipate up to 170 W at a case temperature of 25°C, supporting high-power densities typical in power supply and inverter designs.

Thermal ratings detail a low junction-to-case thermal resistance of 0.74°C/W, enabling efficient heat removal when mounted to an appropriate heatsink. Storage and operation temperatures range from -55°C up to +150°C, supporting a wide variety of industrial use cases.

Packaging types and installation choices for STW28N60DM2

STMicroelectronics provides the STW28N60DM2 in the TO-247-3 package, a widely-adopted through-hole standard favored for its high power dissipation and reliable mechanical integrity in professional-grade assemblies. This package supports easy integration onto power boards, permitting solid connections and straightforward heatsinking.

For engineers needing additional flexibility, related devices in the MDmesh™ DM2 family are available in TO-220 and D²PAK packages, enabling drop-in compatibility with popular footprints and automated or manual assembly lines.

In-depth electrical parameters and performance traits of STW28N60DM2

With a gate-source threshold voltage (Vgs(th)) ranging from 3 V to 5 V and a maximum drain-source on-resistance of 0.16 Ω, the STW28N60DM2 facilitates efficient operation even at moderate drive voltages (10 V typical gate drive). Output and transfer characteristics confirm strong linear behavior and ease of control from common driver ICs.

The device features quick switching responses with a typical turn-on delay time (td(on)) of 16 ns, rise time (tr) of 7.3 ns, turn-off delay (td(off)) of 53 ns, and fall time (tf) of 9.3 ns, allowing for precise timing in high-speed applications. Source-drain diode characteristics—forward voltage drop of 1.6 V and a typical reverse recovery time as low as 140 ns—support minimized losses in synchronous rectification and bidirectional energy flow scenarios.

Protection mechanisms and durability aspects of STW28N60DM2

Protection is a core strength of the MDmesh™ DM2 platform. The STW28N60DM2 integrates back-to-back Zener diodes across the gate-source terminals, enhancing electrostatic discharge (ESD) immunity and protecting the gate oxide during fault conditions. The device is specified to withstand repetitive avalanche current events of 4 A and a single pulse avalanche energy of 350 mJ, adding another layer of robustness against voltage transients.

Furthermore, the MOSFET is tested to guarantee rugged operation up to a dv/dt of 50 V/ns, supporting system reliability in noisy or rapidly-switching power domains. Compliance with RoHS3 and REACH ensures environmental and supply chain compatibility.

Design factors and practical applications for STW28N60DM2

When specifying the STW28N60DM2, engineers should leverage its low-loss, high-speed switching for topologies such as phase-shifted full bridges, high-frequency isolated converters, and fast-switching PFC stages. The MOSFET’s package and thermal ratings support applications where board real estate and heat management are critical. Its fast body diode recovery and dv/dt ruggedness are essential in minimizing snubber requirements and EMI generation.

Considerations such as the gate drive design (to fully resolve its low Qg for fast transitions), PCB layout for optimal heat dispersion, and coordination with thermal interface materials are recommended for best-in-class performance and long-term reliability.

Alternative and substitute models for STW28N60DM2

For applications demanding alternate footprints or stocking flexibility, the MDmesh™ DM2 family from STMicroelectronics offers closely related models:

STB28N60DM2: Packaged in D²PAK (TO-263), suitable for surface-mount designs requiring similar electrical performance.

STP28N60DM2: Provided in TO-220, balancing compactness and power handling for lower power density assemblies.

These equivalents provide nearly identical electrical and switching behaviors, enabling design reuse and multi-sourcing strategies.

Conclusion

The STW28N60DM2 from STMicroelectronics is a leading choice for design and procurement teams tackling high-efficiency, high-voltage power conversion. With its combination of fast-recovery MOSFET design, low switching and conduction losses, and robust package and protection features, the device is engineered for reliable service in modern power architectures. When considered alongside its package variants, the MDmesh™ DM2 family provides a cohesive solution set to span a breadth of power system needs, ensuring design scalability, supply chain flexibility, and long-term sourcing confidence.