STMicroelectronics STW26NM50

STW26NM50 Power MOSFET Overview

The STW26NM50, manufactured by STMicroelectronics, is a high-voltage N-channel Power MOSFET based on MDmesh™ technology. Housed in the robust TO-247-3 through-hole package, the STW26NM50 is designed for demanding switching applications requiring high voltage withstand (500V rating) and significant continuous current delivery (up to 30A at case temperature). With a maximum power dissipation of 313W, this device is tailored for robust industrial, power conversion, and high-reliability systems, offering options for both high-performance engineering builds and cost-sensitive procurement.

Main Attributes and Technical Innovations of STW26NM50

Leveraging STMicroelectronics’ MDmesh™ process, the STW26NM50 integrates advancements in horizontal cell structure and a multiple-drain process. This enables the device to offer consistently low RDS(on) (max 0.12Ω at 13A, 10V VGS), high dv/dt withstand (>15V/ns), and reliable avalanche characteristics. The intrinsic benefits of MDmesh™ also include reduced input and reverse transfer capacitance, optimizing efficiency in fast-switching environments.

Electrical Specifications of STW26NM50

The STW26NM50 carries an absolute maximum drain-to-source voltage (VDS) of 500V and a maximum gate-source voltage (VGS) of ±30V. Rated at 30A continuous drain current at 25°C (derating at higher temperatures), it supports a pulsed drain current up to 120A, making it fit for surge-tolerant power supplies. The device allows for total power dissipation up to 313W (at TC = 25°C), beneficial for demanding thermal environments. Its robust ESD immunity (6kV HBM) further fits applications prone to static exposure.

STW26NM50 Thermal Management and Avalanche Capabilities

Thermal ruggedness is key in high-power designs. The STW26NM50 exhibits a low junction-to-case thermal resistance of 0.4°C/W, supporting efficient heat extraction when mounted on suitable heatsinks. For avalanche and inductive load conditions, the device features a repetitive avalanche current rating of 13A and can absorb single pulse avalanche energies up to 740 mJ, important in power conversion circuits where voltage overshoots can occur.

In-Depth Electrical Parameters of STW26NM50

On-state and switching parameters anchor the performance profile of the STW26NM50. The gate threshold voltage is specified at 3–5V, compatible with standard 10V drive circuits. Maximum gate charge is 106nC, with typical input capacitance (Ciss) of 3000pF—parameters supporting moderate-to-fast switching speeds. The device offers tightly controlled leakage currents (<10µA IDSS at rated VDS), ensuring high system reliability and low standby losses.

STW26NM50 Switching Properties and Dynamic Behavior

Switching times are critical in power conversion and high-frequency designs. At 13A drain current and 10V gate drive, the STW26NM50 demonstrates typical turn-on and turn-off delays of 28ns and 53ns, respectively, with rise and fall times in the 13–19ns range. These dynamic characteristics, supported by practical test circuits detailed by STMicroelectronics, position the STW26NM50 for use in both hard- and soft-switched topologies, minimizing switching losses and EMI.

Built-In Internal Protection Features of STW26NM50

Unlike simpler MOSFETs, the STW26NM50 embeds back-to-back Zener diodes between gate and source. This bolsters both ESD tolerance and resilience against voltage transients on the gate, eliminating the need for external Zener protection and simplifying circuit design. These diodes enhance robustness in environments with high gate drive noise or frequent inrush events.

STW26NM50 Physical Specifications and Installation Guidelines

The TO-247-3 package is widely recognized for high-power applications, facilitating efficient heat sinks and mechanical stability. The STW26NM50’s package supports automated through-hole assembly and high peak lead temperatures (up to 300°C), aligning with a wide range of industrial soldering and mounting standards.

Alternative or Substitute Models for STW26NM50

For engineers planning product continuity, or where "Not for New Designs" status is a concern, identification of potential equivalent or replacement models is key. Consider other STMicroelectronics MDmesh™ MOSFETs in similar voltage (500V), current (30A), and package (TO-247) specifications. Devices featuring comparable low RDS(on), similar thermal metrics, and integrated gate protection may serve as drop-in alternatives. Cross-referencing with leading MOSFET manufacturers for MDmesh™-like or "super-junction" process devices is also recommended to maintain supply chain flexibility.

Conclusion

: Selection Insights for STW26NM50

The STW26NM50 N-channel Power MOSFET offers a compelling mix of high-voltage capability, substantial current handling, and integrated gate-source protections ideal for demanding industrial and power conversion scenarios. Its advanced MDmesh™ technology results in efficient switching and thermal stability. Product selection engineers and procurement personnel evaluating the STW26NM50 are advised to carefully consider its robust electrical characteristics, mechanical form factor, and potential for supply continuity through equivalent models. This ensures optimal long-term system design and maintainability in evolving application landscapes.