IXYS IXFH24N80P

Introduction to IXFH24N80P MOSFET

The IXYS IXFH24N80P is an N-channel power MOSFET, fundamentally engineered to deliver high-efficiency and robust performance in demanding electronic power applications. Belonging to the HiPerFET™ Polar series, this device leverages advanced metal-oxide semiconductor technology to offer a maximum drain-to-source voltage of 800 V and a continuous drain current (at case temperature) of 24 A. The IXFH24N80P is housed in a TO-247AD (also referenced as TO-247-3) through-hole package, supporting its role in both prototyping and mass production for industrial and commercial use.

Key Characteristics and Performance Ratings of IXFH24N80P

Engineers evaluating high-voltage MOSFETs will note the IXFH24N80P’s key performance attributes:

Voltage and Current Ratings: The IXFH24N80P withstands up to 800 V drain-to-source voltage (Vdss) while supporting a 24 A continuous drain current (Id) at a case temperature of 25°C, positioning it for use in high-voltage and high-current switching environments.

RDS(on) and Gate Drive: With a maximum RDS(on) of 400 milliohms at 12 A and 10 V gate-to-source voltage (Vgs), the device ensures low conduction losses. Its gate threshold voltage (Vgs(th)) is 5 V at 4 mA, facilitating straightforward interfacing with most control ICs.

Gate Charge and Input Capacitance: The IXFH24N80P features a total gate charge of 105 nC at 10 V Vgs and a maximum input capacitance (Ciss) of 7200 pF at 25 V, specifications that inform gate driver and switching speed selection.

Power Dissipation: Capable of dissipating up to 650 W (at case), the MOSFET is suitable for high-power density systems requiring robust thermal management.

Physical Specifications and Package Information for IXFH24N80P

The physical and package characteristics of the IXFH24N80P provide flexibility in integration:

Package Type: The device is assembled in a TO-247AD through-hole package, offering ease of mounting and replacement in power boards.

Mounting: Its through-hole design supports secure electrical and thermal connection, which is often preferred in applications where mechanical stress and heat dissipation are critical concerns.

Case and Terminal Configuration: The TO-247-3 configuration offers industry-standard pin assignments, simplifying compatibility with existing layouts.

Use Cases and Selection Guidelines for IXFH24N80P

In real-world engineering contexts, the IXYS IXFH24N80P targets applications such as industrial power supplies, high-voltage inverters, uninterruptible power supplies (UPS), and motor drives. Its significant voltage and current handling make it especially suitable for primary-side switching and the output stages in high-efficiency conversion circuits.

When selecting the IXFH24N80P, engineers should consider system-level parameters such as:

Switching Frequency: The input capacitance and gate charge values directly correlate with gate driver selection and switching speed optimization.

Power Dissipation Strategy: The high 650 W dissipation rating necessitates appropriate heat sinking or managed airflow designs.

Control Voltage Compatibility: Its moderate gate threshold ensures reliable operation with common MOSFET drivers.

Environmental Standards and Compliance Data for IXFH24N80P

For procurement professionals and compliance-focused engineers, the IXFH24N80P adheres to leading industry standards:

RoHS Status: The device is RoHS3 compliant, affirming the absence of prohibited hazardous substances.

REACH Status: Classified as “REACH Unaffected”, the part meets stringent chemical substance standards for global markets.

Moisture Sensitivity Level: Rated at MSL 1 (unlimited), the IXFH24N80P exhibits high resilience to handling and board assembly processes.

Alternative or Substitute Models Comparable to IXFH24N80P

Selecting alternatives or replacements may become necessary due to supply chain factors or second sourcing strategies. When evaluating substitutes for the IXFH24N80P, engineers should identify MOSFETs with:

Minimum 800 V drain-to-source voltage rating

Continuous drain current capability of 24 A or higher

Comparable RDS(on), gate charge, and input capacitance characteristics

Equivalent thermal dissipation and TO-247 package footprint

Popular options to compare could include other IXYS HiPerFET™ series models, STM, Infineon, or Vishay MOSFETs with matching electrical and mechanical features.

Conclusion

: Integrating IXFH24N80P into Power Electronics Design

The IXYS IXFH24N80P MOSFET presents a compelling solution with its combination of high-voltage tolerance, substantial continuous current, and high-efficiency switching performance. Its adherence to environmental directives, robust TO-247AD package, and detailed design transparency make it an optimal candidate for engineers tasked with specifying power semiconductors in high-reliability systems. Engineers and procurement professionals evaluating the IXFH24N80P can do so with confidence, understanding its technical boundaries and practical integration pathways.