IXYS IXFH26N50

Summary of IXYS IXFH26N50 HiPerFET N-Channel MOSFET

The IXYS IXFH26N50 HiPerFET N-Channel MOSFET is engineered to address demanding power switching applications, offering robust voltage and current capabilities in a durable package. With a drain-to-source voltage rating of 500 V and a continuous drain current of 26 A (Tc), the IXFH26N50 is especially suitable for high-power conversion, motor drives, and industrial inverter designs. The device belongs to the HiPerFET series, characterized by high performance and efficiency, and utilizes advanced N-channel MOSFET technology for superior switching speeds and low Rds(on). The TO-247AD (IXFH) through-hole package ensures reliable mechanical integration, making it straightforward for designers to implement in standard heatsink assemblies.

IXYS IXFH26N50 Electrical Specifications

Engineers evaluating the IXFH26N50 will note its high electrical specifications suited for power-heavy environments. Key parameters include a maximum drain-to-source voltage (Vdss) of 500 V, a continuous drain current (Id) up to 26 A at a case temperature of 25°C, and a maximum on-resistance (Rds(on)) of 200 mΩ at 13 A with a gate-source voltage of 10 V. The gate charge (Qg) is 160 nC at Vgs = 10 V, allowing for rapid switching with moderate gate drive requirements, while the gate threshold voltage (Vgs(th)) is specified at 4 V for 4 mA—ensuring predictable turn-on characteristics. The input capacitance (Ciss) is measured at 4200 pF at Vds = 25 V, a relevant point for designers managing switching losses and gate drive optimization in high-frequency circuits.

IXYS IXFH26N50 Heat Management and Dependability

Effective thermal management and device reliability are paramount in heavy-duty applications, and the IXFH26N50 excels with a maximum power dissipation capability of 300 W (Tc). Its operational junction temperature range spans from -55°C to 150°C, accommodating environments with fluctuating thermal loads. The TO-247AD package enables efficient heat transfer when paired with appropriate heatsinking, reducing thermal stress and extending device longevity. These characteristics make the IXFH26N50 a dependable option for industrial engineers seeking robust solutions for continuous duty cycles and transient overload scenarios.

IXYS IXFH26N50 Packaging and Installation Guidelines

The physical configuration of the IXFH26N50 is realized in the TO-247AD (IXFH) through-hole package, providing both mechanical resilience and compatibility with standard PCB layouts for power devices. The device case supports straightforward mounting to heatsinks for optimal thermal management, essential in high-power and long-duration applications. Designers should ensure mounting practices account for secure electrical contacts and appropriate insulation, particularly in systems where safety and electromagnetic compatibility are critical.

Compliance and Certification Details for IXYS IXFH26N50

For procurement and compliance, the IXFH26N50 is RoHS3 compliant and is unaffected by current REACH regulations, facilitating adoption in global markets where environmental standards are mandatory. The component holds a “Not Applicable” moisture sensitivity level, simplifying inventory and storage in typical warehouse conditions. Its ECCN is EAR99 and HTSUS code is 8541.29.0095, details that support import/export and regulatory documentation processes when integrating the IXFH26N50 into manufacturing and distribution channels.

Alternative and Substitute Options for IXYS IXFH26N50

When considering supply chain variability or phased-out status, engineers may seek equivalent or replacement MOSFETs for the IXYS IXFH26N50 HiPerFET. Alternatives should be evaluated based on matching critical electrical specifications: maximum voltage, current rating, Rds(on), gate charge, and package type. Manufacturers offering similar high-voltage, high-current N-channel MOSFETs in TO-247-AD or comparable packages may be suitable, but careful cross-verification of operating temperature, switching speed, and regulatory compliance is essential to avoid integration challenges in sensitive power systems.

Conclusion

The IXYS IXFH26N50 HiPerFET N-Channel MOSFET presents an optimal blend of electrical performance, thermal range, and regulatory compliance for designers targeting industrial, motor control, and high-power switching solutions. Its robust specifications and package versatility address core engineering requirements and support reliable, efficient system operation. With strategic evaluation of replacement models and careful consideration of mounting and regulatory requirements, engineers and procurement specialists are equipped to make informed decisions for high-performance power electronics applications.