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| Part Number: | IXFH24N50 |
|---|---|
| Manufacturer/Brand: | IXYS / Littelfuse |
| Part of Description: | MOSFET N-CH 500V 24A TO247AD |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247AD (IXFH) |
| Series | HiPerFET™ |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 12A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Package / Case | TO-247-3 |
| Package | Tube |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Base Product Number | IXFH24 |




The IXYS IXFH24N50 is a high-voltage, high-current N-channel power MOSFET designed for demanding power electronics applications. Housed in a robust TO-247AD package, the IXFH24N50 offers industry-standard mounting and thermal performance, making it a popular choice among engineers seeking reliable switching solutions. With a breakdown voltage of 500 V and continuous current handling up to 24 A (at case temperature, Tc), this device is optimized for circuits that require a combination of efficiency, ruggedness, and ease of use.
Engineers evaluating the IXFH24N50 will note several defining parameters. Electrically, the dominant features include its 500 V drain-source voltage rating, allowing safe operation in high-voltage environments, and a continuous drain current of 24 A when properly cooled via the case. The device can dissipate up to 300 W (Tc), reflecting its suitability for power-intensive tasks and its compatibility with demanding power management topologies. Mechanically, the TO-247AD through-hole package supports efficient heat transfer and straightforward installation, with standard lead spacing for integration onto power boards. This architecture enables the IXFH24N50 to deliver consistent performance in both new designs and as a drop-in solution for system upgrades.
The IXFH24N50 finds its place in a variety of engineering contexts. It is particularly suited to industrial and commercial applications such as high-frequency power converters, motor drives, uninterruptible power supplies (UPS), inverters, and switch-mode power supplies (SMPS). Its high voltage and current ratings make it ideal for topologies where transient handling and low conduction losses are essential. In real engineering deployments, design teams often rely on the IXFH24N50 to balance system efficiency, component count, and device availability, enabling competitive product performance and reliable field operation.
Designers working with the IXFH24N50 must consider several technical specifics to maximize device utility and reliability. Key considerations include thermal management—leveraging proper heatsink design to exploit the part’s 300 W dissipation capability, careful PCB layout to accommodate the TO-247AD footprint, and voltage derating practices to ensure long-term device robustness. In power electronics design, gate drive circuitry must be appropriately specified to achieve optimal switching speed and minimize losses. Engineers should also account for variability in system operating conditions, verifying that the IXFH24N50’s ratings remain within safe margins during surge, startup, and fault events.
For procurement personnel and compliance officers, the IXFH24N50 is classified under tariff code 8541.29.0095. The device adheres to global standards for electronic components, ensuring suitability for a wide range of markets and regulatory environments. Such certification streamlines the process of sourcing and deploying the IXFH24N50 in international projects, enhancing confidence in both performance and supply chain integrity.
In situations where sourcing flexibility, second-sourcing, or lifecycle management is critical, engineers may seek equivalent or replacement devices for the IXFH24N50. Choosing a substitute requires that the alternative matches or exceeds the IXFH24N50’s core characteristics: 500 V breakdown voltage, 24 A drain current, and comparable thermal performance in a TO-247 or similar package. When considering replacements, always verify pin compatibility, switching behavior, and qualification data in the target application. Engineers should balance availability, cost, and manufacturer support to ensure seamless integration.
: Strategic Selection of IXFH24N50 in Power Electronics
The IXYS IXFH24N50 MOSFET brings robust power handling, high-voltage capability, and integration-friendly packaging to today’s power electronics landscape. Equipped with reliable electrical performance and global compliance credentials, it provides a strong foundation for engineers developing or maintaining high-performance power systems. Selecting the IXFH24N50—while considering system-level requirements, thermal management, and ecosystem support—enables procurement specialists and design teams to deliver enduring solutions in mission-critical applications.
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