Texas Instruments CSD18535KCS

Mfr. Part

CSD18535KCS

Manufacturer

Luminary Micro/Texas Instruments

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Detailed Description

N-channel MOSFET, 60 V, 200 A, ultra‑low Rds(on) 2 mΩ at 10 V, TO‑220‑3 through‑hole package. TI NexFET technology for high efficiency, fast switching, and robust thermal performance. RoHS3 compliant. Ideal for high-current, low-voltage power switching and synchronous rectification.

Key Features

N-channel MOSFET, NexFET series

Vdss 60 V

Continuous drain current Id 200 A (25°C, per provided spec)

Rds(on) max 2 mΩ at 100 A, Vgs = 10 V

Logic-compatible operation: specified at Vgs = 4.5 V and 10 V

Gate charge Qg max 81 nC at Vgs = 10 V

Input capacitance Ciss max 6620 pF at Vds = 30 V

Vgs(max) ±20 V

Operating junction temperature −55°C to +175°C

Power dissipation 300 W (Tc)

Through-hole mounting, TO-220-3

RoHS3 compliant

Base product number: CSD18535

Series: NexFET

Quantity available: 2100 units

Key Advantages

Very low conduction losses from 2 mΩ Rds(on) for higher efficiency

High current capability for demanding loads

Fast switching with moderate gate charge for reduced switching losses

Wide operating temperature up to 175°C for thermal robustness

Simple, proven TO‑220 form factor for easy heatsinking and assembly

Logic-level gate drive option (4.5 V) simplifies control circuits

TI NexFET process provides consistent performance and reliability

Packaging

Type: Tube (factory standard)

Package/Case: TO‑220‑3 (Supplier Device Package: TO‑220‑3)

Material: Molded epoxy body with copper leadframe; tin-plated leads

Size (typical TO‑220): body ~10 mm × 15 mm; overall height with leads ~28–30 mm (reference only; check datasheet for exact)

Pin configuration (front view, leads down): 1 = Gate, 2 = Drain, 3 = Source; metal tab connected to Drain

Mounting: Through‑hole; compatible with heatsinks using mounting hole in tab

Thermal characteristics: Designed for high dissipation; Pd up to 300 W (Tc). Use proper heatsink and thermal interface material.

Electrical properties summary: Vdss 60 V; Id 200 A; Rds(on) 2 mΩ @ 10 V; Qg 81 nC; Ciss 6620 pF; Vgs(th) max ~2.4 V; Vgs(max) ±20 V

Lifecycle

Current status: Active based on available information; not indicated as nearing discontinuation.

Exact pin‑to‑pin equivalent models: No confirmed drop‑in alternatives listed at this time.

Need alternatives or crosses: Contact our sales team via the Y-IC website. We will match key parameters (60 V Vdss, ≤2–3 mΩ Rds(on) at 10 V, high Id capability, TO‑220‑3 pinout, ±20 V Vgs, similar Qg/Ciss) and recommend options from TI NexFET 60 V TO‑220 families or comparable 60 V TO‑220 MOSFETs from major brands (Infineon OptiMOS, Vishay, ST) after verification.

Key Application Areas

Synchronous rectifiers in high-current DC‑DC converters (12–48 V systems)

Low-side or high-side switches in motor control and power tools

Battery systems, UPS, and energy storage (24–48 V)

Server and telecom power supplies

Inverters and industrial power switching

LED drivers and high-current load switches

OR-ing and hot-swap circuits (with appropriate protection)

Datasheet

Y-IC provides the most authoritative datasheet for CSD18535KCS on our product page. Download it now to get full electrical curves, thermal data, pin details, and application guidance.

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