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| Part Number: | CSD18536KCS |
|---|---|
| Manufacturer/Brand: | Texas Instruments |
| Part of Description: | MOSFET N-CH 60V 200A TO220-3 |
| Datasheets: | None |
| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $4.511 |
| 10+ | $4.406 |
| 30+ | $4.3351 |
| 100+ | $4.2641 |
Online RFQ submissions: Fast responses, Better prices!
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220-3 |
| Series | NexFET™ |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Package / Case | TO-220-3 |
| Package | Tube |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 11430 pF @ 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Base Product Number | CSD18536 |




CSD18536KCS
Luminary Micro Texas Instruments
Y-IC is a quality distributor of Texas Instruments products. We provide genuine parts, fast service, and expert support so you get the best products and the best experience
N-channel power MOSFET from TI NexFET family
60 V drain to source, very high current handling
Ultra low on-resistance for high efficiency designs
Single MOSFET, through hole TO-220-3 package
ROHS3 compliant
Operating junction temperature range minus 55 to 175 degrees Celsius
Available quantity listed as 12,500 units, subject to confirmation
Base product number CSD18536, series NexFET, supplier device package TO-220-3
FET type N-channel single
Vdss 60 V
Continuous drain current 200 A at 25 degrees Celsius per provided spec
Max Rds(on) 1.6 milliohm at 100 A with 10 V gate drive
Logic compatible drive with 4.5 V and 10 V options
Gate charge Qg 108 nC at 10 V
Input capacitance Ciss 11,430 pF at 30 V
Gate to source max voltage plus minus 20 V
Power dissipation up to 375 W at case temperature
Through hole mounting for robust mechanical and thermal connection
NexFET technology for low conduction loss and fast switching
ROHS3 compliant, lead free
Very low conduction loss thanks to ultra low Rds(on), reduces heat and boosts efficiency
High current capability supports demanding 48 V and heavy load applications
Works with common gate drive levels 4.5 V and 10 V, easy to integrate with typical controllers
Fast switching with moderate gate charge, enables higher frequency operation with lower losses
Wide junction temperature range improves reliability in harsh environments
Simple through hole TO-220 design, easy to assemble, easy to heatsink
Robust silicon and TI NexFET process for long service life and consistent performance
Type TO-220-3, through hole, single device in tube packaging
Case material epoxy molded plastic with copper leadframe and exposed metal tab
Typical pin configuration three leads, tab is drain. Standard orientation is pin 1 gate, pin 2 drain, pin 3 source, with tab tied to drain. Always confirm the pinout in the datasheet before layout
Size standard TO-220 outline, suitable for clip or screw mounted heatsinks
Thermal characteristics 375 W at case with proper heatsink. Use thermal interface material and secure mounting to reach rated dissipation. Junction temperature minus 55 to 175 degrees Celsius
Electrical properties summary Vdss 60 V, Id up to 200 A per provided spec with proper cooling, max Rds(on) 1.6 milliohm at 100 A and 10 V gate, gate charge 108 nC, input capacitance 11,430 pF, Vgs limit plus minus 20 V
Supplier device package TO-220-3. Manufacturer listed package TO-220-3. Shipped in tubes for safe handling
Current market status active and broadly used. No formal end of life notice has been indicated in commonly available sources at our latest check. Availability can change, so confirm with Y-IC
Equivalent or alternative models to evaluate, selection depends on required Rds(on), gate drive, package, and SOA
- Texas Instruments CSD19505KCS. NexFET, TO-220-3, same family, 60 V class. Evaluate Rds(on), Qg, SOA against your needs
- Texas Instruments CSD18501KCS. NexFET, TO-220-3, 60 V class. Compare on-resistance and current rating
- Texas Instruments CSD18502KCS. NexFET, TO-220-3, 60 V class. Check electricals and thermal limits
- Texas Instruments CSD19536KCS. Same package family, higher voltage class, consider if extra voltage margin is required
- Infineon IRFB3207. TO-220AB, 75 V class, very low Rds(on). Use if a 75 V rating fits your design margin
- STMicroelectronics STP75NF60. TO-220, 60 V class. Check Rds(on), current, and gate charge against your design
For exact drop in equivalence, contact our sales team via the Y-IC website. We will match parts by Rds(on), Qg, SOA, pinout, and thermal requirements for your application
48 V systems such as telecom power distribution, rack power shelves, and ORing
BLDC and brushed DC motor drives for e-bike, robotics, industrial pumps, and fans
Synchronous rectification in high current DC DC converters for 12 V, 24 V, and 48 V buses
Battery protection and battery management switches in energy storage systems
Power tools and mobility devices that need high pulse currents and low losses
Load switching, hot swap, and soft start circuits in server and industrial equipment
Inverters and converters in renewable energy where 60 V bus is common
LED lighting power stages and low side switching for high current strings
Y-IC hosts the most authoritative datasheet for CSD18536KCS on our product page. For accurate pinout, SOA, thermal curves, and test conditions, download the datasheet on this page to guide your design
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