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| Part Number: | S29AL008J55TFAR23 |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor |
| Part of Description: | IC FLASH 8M PARALLEL 48TSOP I |
| Datasheets: |
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| RoHs Status: | Lead free / RoHs compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $1.3116 |
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| Product Attribute | Attribute Value |
|---|---|
| Write Cycle Time - Word, Page | 55ns |
| Voltage - Supply | 3 V ~ 3.6 V |
| Technology | FLASH - NOR |
| Supplier Device Package | 48-TSOP I |
| Standard Package | 1,000 |
| Series | AL-J |
| Part Status | Active |
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Memory Type | Non-Volatile |
| Memory Size | 8Mb (1M x 8, 512K x 16) |
| Memory Interface | Parallel |
| Memory Format | FLASH |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 55ns 48-TSOP I |
| Access Time | 55ns |




The S29AL008J55TFAR23 from Infineon Technologies is an 8-Mbit (1Mx8 / 512Kx16) NOR Flash memory, designed for systems requiring high-speed, nonvolatile, parallel memory storage. Operating exclusively on a single 3V supply (2.7 to 3.6V range), it supports fast access times (as low as 55ns) and is delivered in a 48-pin TSOP or 48-ball fine-pitch BGA package. The device’s flexible word/byte configurations, robust data protection measures, and extended temperature range support (up to +125°C) make it ideally suited for automotive, industrial, and embedded applications.
Engineered using Infineon's 110nm process (with full compatibility to the legacy 200nm S29AL008D), S29AL008J55TFAR23 offers a boot sector architecture supporting both top and bottom boot configurations. Sector organization is highly flexible: in byte mode, the memory is divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and fifteen 64Kbyte sectors; in word mode, it becomes one 8Kword, two 4Kword, one 16Kword, and fifteen 32Kword sectors. This granular sector structure supports efficient firmware updates and data partitioning.
Key architectural highlights include:
Full JEDEC compatibility for pinout and command set, simplifying backward and forward integration.
A secured silicon sector for permanent, secure serialization and identification, accessible via command sequence.
Sector group protection, allowing permanent, temporary, or programmable locking/unlocking of memory regions.
Unlock Bypass Program command, reducing overall programming time in multi-write scenarios.
The S29AL008J55TFAR23 supports robust electrical performance framed by stringent environmental ratings, notably:
Operating voltage: 2.7V to 3.6V for both read and write operations
Access time: 55ns typical for high-speed applications
Ultra-low power consumption: 0.2μA typical standby/sleep, 7mA read, 20mA program/erase at 5MHz
Cycling endurance: 1,000,000 cycles per sector typical
Data retention: 20 years typical, supporting long system lifespans
Wide temperature range: -40°C to +125°C (AEC-Q100 Grade 1), making it suitable for automotive-grade designs
The device's data integrity is further protected against voltage fluctuations and glitches, with stringent requirements for over/undershoot, and write-inhibit functions on low Vcc. These features provide confidence in data retention and programming reliability, even under challenging operating conditions.
Available in both 48-pin TSOP (18.4×12.0×1.2mm) and 48-ball fine-pitch BGA (8.15×6.15×1.0mm), the S29AL008J55TFAR23 supports high-density board layouts and robust environmental performance. Engineering teams should heed special handling instructions for BGA packages, as exposure to ultrasonic cleaning or excessive thermal stress (above 150°C) can compromise device integrity. Lead coplanarity and solder ball dimensional compliance are maintained per JEDEC/ASME standards, supporting safe mounting in automated assembly lines.
S29AL008J55TFAR23 integrates a rich set of command- and status-driven bus operations essential for system integration:
Word/byte configuration selectable via BYTE# pin, enabling flexibility in memory interface width.
Standard microprocessor-style control signals (CE#, OE#, WE#) manage array data access and command sequences, ensuring bus contention avoidance and easy processor interfacing.
Embedded state machine automates timing and verification for all erase/program operations.
Standby and automatic sleep modes minimize consumption when not accessed, supporting battery-powered designs.
Hardware reset (RESET#) pin resets device operations and internal state machine, facilitating robust startup and reset behaviors during system events.
Data protection is a pivotal criterion for system engineers, and the S29AL008J55TFAR23 delivers with:
Multiple sector group protection features: in-system hardware locking/unlocking, and a temporary unprotect mechanism enabled via RESET# and V_ID.
Hardware write protection (WP#) supporting configuration-sensitive sector guarding (top or bottom sector depending on boot arrangement).
Inadvertent write protection via both hardware circuitry (low Vcc, write glitch filtering) and command protocols.
Permanent sector lock capability, preventing code changes in critical regions.
Programming and erase operations on S29AL008J55TFAR23 are fully automated by embedded algorithms:
Programming: Executed by standard or unlock bypass command sequences, supporting wordor byte-oriented writes. Automated pulse generation, margin verification, and program completion indication are built-in.
Erase: Sector or full-chip erase sequences are supported. Additional sectors can be buffered for simultaneous erasure within tight timing windows.
Erase Suspend/Resume: Enables interruption of a sector erase so other parts of the memory array remain accessible—a key need during firmware updates or emergency interventions.
Operation status is provided through hardware (RY/BY# ready/busy output) and special data polling/toggle bits (DQ7, DQ6, DQ2), allowing the host processor to monitor and verify the completion and integrity of all critical memory modification operations.
Secured Silicon Sector: A dedicated, 256-byte region supporting factory-programmed or customer-lockable secure serialization, such as Electronic Serial Numbers (ESN) for anti-cloning, traceability, or device authentication. Once factory-locked (DQ7 indicator), it cannot be changed; for customer-lockable options, one-time-write and lock-out are user-controlled.
Common Flash Interface (CFI): The device fully complies with CFI protocols, allowing automatic system-level recognition and configuration of its geometry and operational features. This facilitates field upgrades, programming, and multi-vendor system compatibility.
With a worst-case access time of 55ns, S29AL008J55TFAR23 meets the needs of demanding real-time systems. Its programming and erasure performance is optimized via hardware algorithms, typical cycle times, and robust switching parameters. Input/output pin capacitances are tightly controlled (sampled at 1MHz/25°C), supporting high-frequency memory busses. Absolute maximum ratings and power-up/down behavior are engineered to guarantee device longevity and error-free operation.
When evaluating pin-to-pin and firmware-compatible alternatives to S29AL008J55TFAR23, engineers may consider the following from Infineon Technologies as primary candidates:
S29AL008J Series (different speed grades or package types), as all variants share the same core architecture, JEDEC compatibility, and command set.
S29AL008D series, manufactured on the older 200nm process, which remains fully compatible in terms of pinout and software interfaces.
Other Infineon parallel NOR Flash products that match the required access times, voltage, package, and boot sector architecture.
Cross-comparison with other prominent NOR Flash suppliers requires careful review of JEDEC pin command compatibility, sector architecture, boot block configurations, voltage ratings, and power consumption profiles to ensure seamless replacement in production systems.
: Practical Selection Considerations for S29AL008J55TFAR23
The S29AL008J55TFAR23 NOR Flash memory provides a robust, flexible, and secure solution for embedded systems requiring fast, reliable, and secure nonvolatile storage. Its combination of advanced architectural features, extensive data protection options, industry-standard interfaces, and automotive-grade environmental credentials makes it an ideal candidate for use in complex firmware management, code storage, and secure identification applications.
For engineers and procurement specialists, thorough evaluation of operational requirements—such as access speed, endurance, security, package compatibility, and AEC-Q100 grade—will ensure optimum integration and lifecycle support. The S29AL008J55TFAR23’s proven reliability and rich feature set justify its continued recommendation for new designs and legacy system expansions.
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