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| Part Number: | IPA60R280E6 |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | 600V 0.28OHM N-CHANNEL MOSFET |
| Datasheets: | None |
| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.6582 |
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO220-3-111 |
| Series | CoolMOS E6™ |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| Power Dissipation (Max) | 32W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |




IPA60R280E6
Infineon Technologies
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600 V N-channel superjunction MOSFET from the CoolMOS E6 series
Rds on 280 mΩ at 10 V gate drive for low conduction loss
Continuous drain current 13.8 A at case conditions
TO-220-3 Full Pack PG-TO220-3-111 package with insulated tab
Through-hole mounting for robust mechanical retention and easy heatsink use
Operating junction temperature range -55 to 150 °C
RoHS3 compliant for environmentally responsible designs
Technology MOSFET metal oxide
Available stock 3077 units
600 V drain-to-source voltage rating
280 mΩ max Rds on at 10 V gate drive
13.8 A continuous drain current at 25 °C case
±20 V maximum gate-to-source voltage
Gate charge 43 nC max at 10 V for fast switching
Input capacitance 950 pF max at 100 V
Vgs threshold 3.5 V max for reliable turn-on behavior
CoolMOS E6 superjunction technology for high efficiency
Through-hole TO-220-3 Full Pack PG-TO220-3-111
Operating junction temperature -55 to 150 °C
RoHS3 compliant
High efficiency in high-voltage power conversion
Low conduction losses thanks to low Rds on
Fast, clean switching with controlled gate charge and capacitance
Insulated tab simplifies mounting and enhances electrical safety
Wide operating temperature range for harsh environments
Proven reliability of the CoolMOS E6 platform
Simple 10 V gate drive for best performance
Type TO-220-3 Full Pack PG-TO220-3-111 through-hole
Material epoxy-molded body with fully insulated mounting tab
Size standard TO-220 footprint compatible with common heatsinks and hole spacing
Pin configuration Pin 1 Gate, Pin 2 Drain, Pin 3 Source
Mounting through-hole with bolt-on heatsink capability
Thermal characteristics power dissipation up to 32 W at Tc and junction temperature up to 150 °C
Electrical properties Vdss 600 V, Id 13.8 A, Rds on 280 mΩ at 10 V, Vgs ±20 V, Qg 43 nC, Ciss 950 pF, Vgs(th) up to 3.5 V
Supplier device package PG-TO220-3-111
Package supplied in bulk
Active product with no public end-of-life notice identified
Availability and second sources depend on exact package, thermal, and electrical requirements
If you need drop-in or functionally equivalent alternatives, please contact our sales team via Y-IC.com and we will provide a detailed, design-matched list
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Download the datasheet on this page to get complete electrical curves, thermal data, and application guidance
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IPA60R280E6Infineon Technologies |
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