SAMSUNG K4B4G1646D-BYMA

Mfr. Part

K4B4G1646D-BYMA

Manufacturer

Samsung Electro-Mechanics

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Detailed Description

High-performance DDR3 SDRAM memory IC from the K4B4G1646D family, widely used as system memory in embedded and computing designs. The BYMA suffix defines a specific speed/package/voltage option in this series. This device fits the Integrated Circuits (ICs) category, small classification Specialized ICs. Ideal for high-bandwidth applications needing stable, JEDEC-compliant DDR3 memory. Please confirm exact organization, speed grade, and voltage in the datasheet.

Key Features

JEDEC-compliant DDR3 SDRAM architecture for broad compatibility

High bandwidth for fast data access and efficient buffering

Low operating power compared to earlier DDR generations

Supports standard DDR3 features: burst operations, auto-refresh, self-refresh, on-die termination (ODT), programmable drive strength

BGA footprint for compact PCB design

RoHS-compliant, lead-free manufacturing

Production date code 15+ for traceability

Supplier package code 3599 per listing

Key Advantages

Reliable memory performance from a proven Samsung platform

Stable supply chain with wide ecosystem support

Compact package saves board space

Energy-efficient operation reduces system power

Strong compatibility with mainstream CPUs, SoCs, and controllers

Supported by Y-IC with quality sourcing and customer service

Packaging

Type: Ball Grid Array (BGA), commonly used for DDR3 SDRAM devices

Supplier Package/Case: 3599 (refer to the datasheet for the exact mechanical outline tied to BYMA)

Material: Lead-free solder balls; environmentally friendly mold compound (green, halogen-free)

Size: Compact BGA body; exact X/Y dimensions and ball pitch are defined in the mechanical drawing for BYMA

Pin (Ball) Configuration: Grid-array I/O; ball map and signal assignments provided in the datasheet for the BYMA option

Thermal Characteristics: Junction and operating temperature ranges, derating, and thermal resistance values are specified in the datasheet; follow manufacturer guidelines for layout and thermal management

Electrical Properties: DDR3/DDR3L supply rails (commonly 1.5 V for DDR3 or 1.35 V for DDR3L variants), SSTL signaling, speed bin and timing parameters determined by the BYMA code; verify exact values in the datasheet

Handling: Moisture sensitivity and reflow profile are defined per JEDEC; store and handle per MSL guidance

Date Code: 15+ (batch production code for traceability)

Lifecycle

Current Status: No public end-of-life notice identified at this time. Availability may vary by speed/voltage/package option.

Cross-Reference and Alternatives: Equivalent DDR3 4Gb x16 devices may be available from other major vendors (for example, Micron MT41K256M16 series, SK hynix H5TQ4G63 family, Nanya NT5CB256M16 series). Exact compatibility depends on speed grade, operating voltage (DDR3 vs DDR3L), timing parameters, and package/ball-out. Always verify against the datasheet before substitution.

If you need a one-to-one equivalent or vetted alternatives for your specific BYMA version, please contact our sales team via the Y-IC website for detailed cross-reference support.

Key Application Areas

PCs, laptops, thin clients, and embedded computing platforms

Networking equipment: routers, switches, access points

Industrial control systems and HMI panels

Consumer electronics: smart TVs, set-top boxes, media players

Printers, scanners, and office electronics

Automotive infotainment and telematics (platform-dependent)

IoT gateways and edge devices using DDR3-capable SoCs

Datasheet

Our website hosts the most authoritative datasheet for K4B4G1646D-BYMA. For exact electrical, timing, and mechanical details, download the datasheet on this page and confirm all parameters for your design.

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