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| Part Number: | STP40NF10L |
|---|---|
| Manufacturer/Brand: | STMicroelectronics |
| Part of Description: | MOSFET N-CH 100V 40A TO220AB |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $1.025 |
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±17V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220 |
| Series | STripFET™ |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Package / Case | TO-220-3 |
| Package | Tube |
| Operating Temperature | 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 5 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Base Product Number | STP40 |




The STP40NF10L, from STMicroelectronics, is an N-Channel Power MOSFET designed for high-performance switching applications. Housed in a standard TO-220AB package for through-hole mounting, this device offers a robust combination of voltage, current handling, and efficiency. With a drain-source voltage rating of 100 V and a continuous drain current capability of 40 A (at case temperature), the STP40NF10L addresses the needs of power supply designers in telecom, computing, and industrial sectors where efficient, reliable switching is paramount.
Key to the STP40NF10L's performance is its STripFET™ process technology, a proprietary advancement from STMicroelectronics. This process results in minimized input capacitance and reduced gate charge, facilitating efficient operation in circuits constrained by gate drive limitations. Among the notable features are its low on-state resistance (R_DS(on)) of 0.028Ω and high avalanche energy robustness, which enable the device to withstand harsh switching and inductive load environments with reduced thermal and conduction losses. In addition, the MOSFET is fully 100% avalanche tested, ensuring reliability for real-world applications.
Product selection engineers must consider the STP40NF10L's absolute maximum ratings to ensure dependable and safe operation. The device is rated for 100 V drain-source voltage and can support pulsed currents beyond its 40 A continuous capability, subject to the limits of its safe operating area (SOA). The maximum power dissipation, when mounted on a standard heat-sink, is 150 W at a case temperature of 25°C, emphasizing the need for proper thermal design in high-power scenarios.
Attention to the specified gate-source voltage range, as well as transient thermal impedance characteristics, is vital—especially in applications with rapid load changes or high-frequency switching. Engineers must evaluate these ratings during design to avoid device degradation or failure.
For circuit designers, in-depth insight into the MOSFET's electrical properties is essential for accurate modeling and integration. At a case temperature of 25°C, the STP40NF10L exhibits the following key performance metrics: a typical gate-source threshold voltage suited for standard drive voltages, low drain-source on resistance for minimized conduction losses, and fast switching capabilities with reduced gate charge requirements.
The device’s transfer characteristics, output characteristics, and transconductance curves, as presented in the manufacturer's technical data, provide a comprehensive picture for simulation and worst-case analysis. Data on capacitance variation, temperature dependence of key parameters, and body diode behavior further support robust design in advanced power conversion and motor control applications.
The STP40NF10L’s minimization of input capacitance and gate charge directly benefits high-frequency, efficient power conversion tasks. This makes it highly suitable for isolated DC-DC converter topologies and other circuits where swift and reliable switching is necessary. The low gate charge requirement ensures compatibility with a wide variety of low-current gate drivers and controller ICs, while internal characterization and 100% avalanche testing guarantee resilience during demanding switching events or abnormal operating conditions.
Test circuit configurations for resistive and inductive load switching provide reference scenarios for validating the MOSFET's dynamic behavior under real-world conditions. Detailed gate-charge and switching waveform profiles enable designers to anticipate electromagnetic compatibility (EMC) and power loss considerations at the system level.
The STP40NF10L is encapsulated in the TO-220AB package—a widely adopted industry standard. This package provides a straightforward through-hole solution for board-level assembly and is ideal for applications that require substantial heat sinking. Mechanical data, including lead and package dimensions, support automated assembly and straightforward mechanical integration. The design and finish are optimized to comply with evolving environmental and reliability standards, thus facilitating global deployment.
Anticipating diverse global requirements, the STP40NF10L is manufactured in compliance with key environmental directives. It features Lead-free second-level interconnects and is certified under JEDEC’s ECOPACK® initiative. The Moisture Sensitivity Level (MSL) is 1, indicating an unlimited floor life under standard conditions—thereby simplifying inventory management for procurement professionals. The MOSFET is unaffected by REACH restrictions and is classified under the EAR99 category for export control, ensuring broad international usability.
When considering design maintenance or cost optimization, sourcing engineers may investigate alternative models to the STP40NF10L with matching voltage, current, and package characteristics. Key criteria for suitable equivalents include: N-channel MOSFET topology, 100 V drain-source voltage, 40 A continuous current, low R_DS(on), and a TO-220 footprint. Engineers should pay particular attention to manufacturer process technologies (such as STripFET or similar), as these impact efficiency and switching performance. Consultation with both STMicroelectronics and reputable manufacturers’ technical resources can help identify directly interchangeable models or those suitable for minor board modifications.
: STP40NF10L in Modern Power Conversion and Switching Designs
The STP40NF10L from STMicroelectronics stands out as a robust, efficient, and industry-proven solution for demanding power switching applications. Leveraging advanced STripFET™ process technology, a comprehensive suite of electrical ratings, and environmental compliance, it addresses the full spectrum of requirements for modern DC-DC converters, industrial power supplies, and advanced switching architectures. For selection engineers and procurement specialists, the STP40NF10L offers a dependable platform, backed by detailed technical data and broad compatibility with established electronic assembly practices.
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