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Time: June 17th, 2026
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|
Pin
No. |
Pin
Name |
Function |
|
1 |
VCC |
Positive supply
voltage input for the IC. It powers the internal oscillator, logic circuitry,
and gate drivers. Typically connected to a DC supply within the recommended
operating range. |
|
2 |
RT |
Timing resistor
pin. An external resistor connected to RT works with the CT capacitor to set
the oscillator frequency. |
|
3 |
CT |
Timing capacitor
pin. An external capacitor connected to CT determines the oscillator
frequency together with the RT resistor. |
|
4 |
COM |
Common ground
reference for the IC. This pin serves as the return path for the low-side
driver and internal control circuitry. |
|
5 |
LO |
Low-side gate
driver output. It drives the gate of the low-side MOSFET referenced to COM. |
|
6 |
VS |
High-side
floating supply return. Connected to the source of the high-side MOSFET and
serves as the reference point for the high-side driver. |
|
7 |
HO |
High-side gate
driver output. It drives the gate of the high-side MOSFET using the floating
high-side supply. |
|
8 |
VB |
High-side
floating supply voltage. Connected to the bootstrap circuit and provides
power for the high-side driver section. |
• Integrated 600 V Half-Bridge Gate Driver - Supports high-voltage half-bridge applications and can drive both high-side and low-side N-channel MOSFETs.
• Built-In Oscillator - Requires only an external resistor (RT) and capacitor (CT) to generate the switching frequency, reducing component count.
• 15.6 V VCC Zener Clamp - Includes an internal zener clamp that helps protect the IC from excessive supply voltage.
• Micropower Startup Circuit - Consumes very little current during startup, improving efficiency and simplifying power supply design.
• Fixed Dead-Time Control - Provides a typical dead time of 1.2 μs to prevent simultaneous conduction of the power MOSFETs.
• Shutdown Function - Allows the oscillator and driver outputs to be disabled through the CT pin for protection or control purposes.
• Undervoltage Lockout (UVLO) - Monitors the supply voltage and disables the outputs when the voltage is too low for safe operation.
• Low dV/dt Gate Driver Design - Improves noise immunity and helps prevent false triggering in high-voltage switching environments.
• Bootstrap High-Side Driver - Uses a bootstrap capacitor to power the floating high-side gate driver without requiring an isolated supply.
• ESD Protection - Provides electrostatic discharge protection on all pins to improve device reliability during handling and assembly.
|
Parameter |
Value |
|
High-Side Offset
Voltage |
Up to 600 V |
|
High-Side
Floating Supply Voltage (VB) |
Up to 625 V |
|
Supply Voltage
(VCC) |
10 V to 15.6 V
(clamped) |
|
Duty Cycle |
50% |
|
Dead Time
(Typical) |
1.2 μs |
|
Rise Time (Tr) |
80 ns |
|
Fall Time (Tf) |
40 ns |
|
VCC Clamp
Voltage |
15.6 V |
|
Supply Current
(Typical) |
5 mA |
|
RT Pin Current |
±5 mA Max |
|
Allowable dVS/dt |
±50 V/ns |
|
Junction
Temperature Range |
-40°C to +125°C |
|
Storage
Temperature Range |
-55°C to +150°C |
|
Maximum Junction
Temperature |
150°C |
|
Package Options |
8-Pin PDIP,
8-Pin SOIC |
|
IC
Model |
Max
Bootstrap Voltage |
Typical
Supply Voltage |
Dead-Time
Control |
|
IR21531 |
600 V |
10 V – 20 V |
Fixed |
|
IR2101 |
600 V |
10 V – 20 V |
External |
|
IR2104 |
600 V |
10 V – 20 V |
Internal |
|
IRS2003 |
600 V |
10 V – 20 V |
Internal |
|
IRS2153D |
600 V |
10 V – 20 V |
Fixed |
|
L6384E
|
600 V |
10.5 V – 20 V |
External |
|
FAN7382 |
600 V |
10 V – 20 V |
External |
The IR2153 integrates an oscillator, control logic, dead-time generator, level shifter, and gate drivers into a single IC. Operation begins at the RT and CT pins, where an external resistor and capacitor set the oscillator frequency. The internal oscillator generates alternating switching signals that control the high-side and low-side outputs.

IR2153 Functional Block Diagram
These signals pass through the logic and dead-time circuits, which ensure that the two MOSFETs do not turn on simultaneously. The built-in dead time helps prevent shoot-through current and improves switching reliability. An undervoltage lockout circuit also monitors the supply voltage and disables the outputs if the voltage becomes too low.
For the high-side channel, the signal is transferred through a high-voltage level shifter to the floating driver section. The high-side driver uses the VB and VS pins together with a bootstrap capacitor to generate the gate-drive voltage required at the HO output. The low-side driver operates directly from the VCC supply and controls the LO output.
By combining these functions into one device, the IR2153 can generate complementary high-side and low-side gate-drive signals with minimal external components, making it useful for half-bridge power supplies, electronic ballasts, and inverter circuits.
This typical connection below shows the IR2153 configured as a self-oscillating half-bridge driver. The RT resistor and CT capacitor connected to the timing pins determine the switching frequency of the internal oscillator. By selecting different RT and CT values, you can adjust the operating frequency to match the requirements of the power supply, inverter, or electronic ballast circuit.
The HO and LO outputs drive the gates of the high-side and low-side MOSFETs through gate resistors. These two MOSFETs switch alternately, creating a half-bridge output at the midpoint between them. The switching waveform is then coupled to the load through the output network, which may include capacitors, inductors, or transformers depending on the application.

IR2153 Gate Driver IC Typical Connection
The VB and VS pins form the bootstrap circuit required for high-side gate driving. A bootstrap capacitor connected between VB and VS stores charge when the low-side MOSFET is on. This stored energy allows the HO output to drive the high-side MOSFET gate above the source voltage during high-side switching.
The VCC pin provides power to the IC and the gate drivers, while COM serves as the ground reference. The capacitor connected across VCC and COM acts as a bypass capacitor, helping to stabilize the supply voltage and reduce switching noise.
A shutdown transistor is also shown connected to the timing network. When activated, it discharges the CT capacitor, stopping the oscillator and disabling the switching operation. This feature can be used for protection, enable/disable control, or fault shutdown functions.
• Half-Bridge SMPS Power Supplies
• Resonant Power Converters
• DC-AC Inverters
• Induction Heating Systems
• LED Driver Circuits
• Battery Charging Systems
• Motor Drive Controllers
• High-Frequency Switching Power Supplies
• AC-DC Power Converters
• Solar Power Inverters
• Uninterruptible Power Supplies (UPS), etc.

The IR2153 was originally developed by International Rectifier (IR), a well-known manufacturer of power semiconductors, gate driver ICs, MOSFETs, and IGBTs. After International Rectifier was acquired by Infineon Technologies, the IR2153 family became part of Infineon’s power management and gate driver product portfolio. Infineon has strong manufacturing capability in high-voltage semiconductor devices, advanced quality control, and long-term product support, allowing it to continue producing reliable IR2153 and related half-bridge driver ICs for electronic ballasts, SMPS circuits, inverters, and other power conversion applications.
The bootstrap circuit allows the IR2153 to drive the high-side MOSFET without requiring an isolated power supply. This reduces cost, saves board space, and simplifies circuit design.
A capacitor that is too small may not store enough charge to fully drive the high-side MOSFET. This can lead to incomplete switching, increased heat generation, and reduced efficiency.
Yes. The IR2153 can drive both MOSFETs and IGBTs as long as the gate voltage, switching frequency, and gate charge requirements are within the device's capabilities.
Dead time prevents the high-side and low-side switching devices from turning on simultaneously. Without it, a shoot-through current could occur and potentially damage the power stage.
The built-in oscillator eliminates the need for an external PWM controller in many applications. Designers only need an RT resistor and CT capacitor to establish the switching frequency.
Yes. Since the frequency is determined by the RT and CT timing network, changing these values or using a variable resistor allows the operating frequency to be adjusted.
Integrating both drivers into a single package reduces component count, simplifies PCB layout, improves timing coordination, and lowers overall system cost.
The practical frequency limit depends on MOSFET gate charge, switching losses, bootstrap capacitor performance, dead time requirements, and thermal considerations.
Yes. Two IR2153 devices can be used together to control a full-bridge inverter, allowing higher output power and greater design flexibility.
Common causes include incorrect bootstrap capacitor sizing, inadequate gate drive design, poor PCB layout, insufficient supply decoupling, excessive voltage spikes, and operating beyond the device's voltage or temperature limits.
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