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STMicroelectronics
M95512-WDW6TP Image
Image may be representation.
See specs for product details.

STMicroelectronics M95512-WDW6TP

Part Number: M95512-WDW6TP
Manufacturer/Brand: STMicroelectronics
Part of Description: IC EEPROM 512KBIT SPI 8TSSOP
Datasheets:
1.M95512-WDW6TP.pdf ···

HTML Datasheet

M95512-DF/R/W.pdf

M95512-WDW6TP Page PDF

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RoHs Status: ROHS3 Compliant
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In stock: 45228 Pcs Stock

Ship From: Hong Kong

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  • STMicroelectronics M95512-WDW6TP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics M95512-WDW6TP.
    Product Attribute Attribute Value
    Write Cycle Time - Word, Page 5ms
    Voltage - Supply 2.5V ~ 5.5V
    Technology EEPROM
    Supplier Device Package 8-TSSOP
    Series -
    Package / Case 8-TSSOP (0.173", 4.40mm Width)
    Package Tape & Reel (TR)
    Operating Temperature -40°C ~ 85°C (TA)
    Product Attribute Attribute Value
    Mounting Type Surface Mount
    Memory Type Non-Volatile
    Memory Size 512Kbit
    Memory Organization 64K x 8
    Memory Interface SPI
    Memory Format EEPROM
    Clock Frequency 16 MHz
    Base Product Number M95512
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M95512-WDW6TP Product Details

Summary of the M95512-WDW6TP STMicroelectronics EEPROM 512KBIT SPI 8TSSOP

The STMicroelectronics M95512-WDW6TP is a 512-Kbit (64-Kbyte) serial EEPROM designed for robust, high-performance data storage in embedded systems. Housed in an 8-pin TSSOP package, it interfaces using the SPI protocol at speeds up to 16 MHz, supporting a broad range of microcontroller platforms. Part of the M95512 product family, it includes variants matched to different supply voltage requirements (M95512-W, M95512-R, and M95512-DF), and offers advanced data integrity features, rugged endurance, and options for enhanced security. Its temperature tolerance ranges from -40 °C to +85 °C, making it suitable for industrial and automotive designs where reliability is crucial.

Memory structure and main characteristics of the M95512-WDW6TP

At its core, the M95512-WDW6TP organizes memory as 65536 x 8 bits, delivering 512 Kbits of non-volatile storage. Memory access is page-oriented, with a 128-byte page size supporting efficient batch programming. Each device features a write time of under 5 ms per byte or page, which accelerates programming cycles in time-sensitive applications.

Writing is flexible—engineers can choose between single-byte and multi-byte (page) writes. The device also introduces an optional, lockable 128-byte Identification Page (available in certain variants like the M95512-DF), suited for storing calibration constants, unique device IDs, or other sensitive parameters. Once locked, this page becomes read-only, providing an extra layer of data integrity for critical parameter storage.

Beyond storage density, the device incorporates Error Correction Code (ECC) logic that operates transparently to the SPI protocol. ECC works on groups of 4 bytes, correcting any single-bit error within each group during read operations and boosting the reliability of long-term data retention, particularly in environments subject to electrical noise or frequent rewrites.

In-depth analysis of M95512-WDW6TP operational functions and communication protocols

Designed for seamless integration, the M95512-WDW6TP communicates over the standard SPI bus, supporting clock rates up to 16 MHz. It operates in either of the two most common SPI modes: CPOL=0, CPHA=0 or CPOL=1, CPHA=1, ensuring compatibility with a wide range of microcontrollers and host processors.

All instructions and data are transferred most-significant-bit first. The device uses a straightforward command protocol, including operations such as Write Enable, Write, Read, Write Disable, and Status Register manipulation. Write safety is enhanced through a “write enable latch” (WEL); any memory-modifying command must be preceded by an explicit write enable instruction, providing a safeguard against accidental writes.

Block-level software protection is available via configurable status register bits (BP0, BP1), which designate specific memory regions as read-only. An additional Write Protect (WP) pin, used in conjunction with a Status Register Write Disable (SRWD) bit, enables a hardware block protection mode to lock these software protect bits against in-system changes.

During SPI operations, the chip select input (S) determines device selection. The chip also features a Hold input, which allows pausing of serial communication, providing flexibility in shared-bus architectures.

Power management, reliability, and data security features of the M95512-WDW6TP

Reliability and data protection are central to the M95512-WDW6TP’s design. The EEPROM supports over 4 million write cycles per memory group (as managed by internal ECC), assuring robust endurance in applications characterized by frequent data updates. The device provides up to 200 years of data retention, a significant benefit for applications such as industrial controls, metering, and critical system configuration storage.

The M95512-WDW6TP offers a broad supply voltage range, accommodating systems operating from 2.5 V to 5.5 V for the W-variant, with other variants supporting even lower minimum voltages down to 1.7 V. A power-on-reset (POR) circuit ensures the device correctly initializes, remaining inactive until the supply voltage is stable and at a valid level. It also enters standby mode automatically when deselected, minimizing current draw in power-sensitive designs.

To prevent unintentional data alteration, the part enforces protocol requirements for write cycles—including checks for valid clocking and device states. The status register provides feedback on device readiness and protection states, while hardware and software write protection complements error prevention strategies.

Available packaging types and physical design considerations for the M95512-WDW6TP

The M95512-WDW6TP is offered in multiple industry-standard, RoHS-compliant packages to suit a range of manufacturing and space requirements. These include:

TSSOP8: A thin, shrink small-outline package (3 x 6.4 mm) suitable for densely packed boards.

SO8N: Wider small-outline option for standard sockets.

UFDFPN8 (DFN8): Ultra-thin, fine-pitch dual-flat (2 x 3 mm) package for low-profile applications.

WLCSP8: 8-bump, wafer-level chip-scale package (1.289 x 1.955 mm), ideal for mobile or miniature designs.

Each package features ECOPACK2 environmental compliance, supporting green manufacturing processes. Care should be taken to follow manufacturer’s footprint recommendations, especially for space-constrained or high-vibration environments, to ensure mechanical integrity and consistent electrical performance.

Electrical specifications and timing details of the M95512-WDW6TP

For robust design and integration, the key electrical and timing characteristics of the M95512-WDW6TP are as follows:

Operating voltage: 2.5 V to 5.5 V (M95512-W), with options down to 1.7 V in other variants

Maximum clock frequency: 16 MHz for high-speed data transfers

Write cycle time: ≤5 ms for byte or page writes

Input capacitance: low, facilitating direct microcontroller interfacing

Input/output levels: CMOS compatible for digital logic design

Endurance: Over 4 million write cycles per memory group (with ECC)

Data retention: 200 years (qualified by characterization)

Timing diagrams are available detailing input, hold, and serial output requirements. Designers should ensure supply rails remain stable during write cycles and manage proper chip select and hold timing to avoid data corruption.

Alternative or compatible models for the M95512-WDW6TP

Selecting an alternative for the M95512-WDW6TP requires consideration of supply voltage, temperature range, and package compatibility. Within the STMicroelectronics family, the M95512-R and M95512-DF are direct alternatives, differing primarily in minimum Vcc specification (as low as 1.7 V for the DF variant) and in the provision of a lockable Identification Page (exclusive to the DF model).

Engineers seeking to cross-reference or design-in alternatives may also consider EEPROMs from other prominent manufacturers, provided these meet at least:

512-Kbit density

SPI interface support up to 16 MHz

Comparable endurance, data retention, and package offerings

Key search criteria should include page size, supported protection features (such as hardware/software write protection and ECC), temperature range, and electrical compatibility for seamless drop-in replacement.

Conclusion

: Application considerations for the M95512-WDW6TP

The STMicroelectronics M95512-WDW6TP offers engineers a high-reliability, high-endurance SPI EEPROM solution with a strong blend of speed, protection, and flexibility. It fits a wide range of embedded, industrial, and consumer applications—anywhere parameter, configuration or event data demand long-term, tamper-resistant, and reliable storage. Its robust protocol features reduce the risk of accidental data loss, while package variety supports integration into both traditional and advanced board designs. When evaluating memory components for next-generation projects, the M95512-WDW6TP stands out as a versatile, standards-based platform ready to address the most demanding application requirements.

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M95512-WDW6TP Image

M95512-WDW6TP

STMicroelectronics

IC EEPROM 512KBIT SPI 8TSSOP
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