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| Part Number: | IRFS4615TRLPBF |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | MOSFET N-CH 150V 33A D2PAK |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.4028 |
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D2PAK |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 21A, 10V |
| Power Dissipation (Max) | 144W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Base Product Number | IRFS4615 |




The IRFS4615TRLPBF, manufactured by Infineon Technologies, is a member of the HEXFET series and stands out as a robust N-channel MOSFET designed for demanding power conversion and switching applications. With a drain-to-source breakdown voltage of 150 V and continuous drain current capability up to 33A (at Tcase = 25°C), this device is well-suited for high-efficiency, high-power systems. Incorporating advanced MOSFET technology, it features a maximum RDS(on) of 42 mΩ at 21A and 10V gate drive, delivering low conduction losses and facilitating efficient thermal management.
The IRFS4615TRLPBF comes in a D2PAK (TO-263AB) surface-mount package, promoting ease of integration into PCBs with stringent space requirements while supporting substantial power dissipation—up to 144W with optimal cooling. Its fully characterized capacitance and avalanche performance, alongside dynamic ruggedness improvements, make it ideal for modern power designs where reliability and speed are priorities.
Engineers selecting the IRFS4615TRLPBF HEXFET MOSFET will find its features advantageous in several advanced system contexts. The device is primarily targeted at high-efficiency synchronous rectification in SMPS (Switched-Mode Power Supply), uninterruptible power supplies, and hard-switched, high-frequency circuits. Typical circuit requirements include rapid switching, high current throughput, and minimal switching or conduction losses.
In synchronous rectification for SMPS, leveraging the IRFS4615TRLPBF’s low RDS(on) reduces energy loss during the conduction phase, directly improving conversion efficiency. In scenarios such as uninterruptible power supply designs, the enhanced avalanche and dynamic dV/dt ruggedness ensure long-term device safety during transient events. High-speed switching solutions also benefit from its fast turn-on and turn-off times, minimizing delay and contributing to greater circuit responsiveness.
The IRFS4615TRLPBF delivers a suite of electrical parameters tailored for demanding power designs. Key highlights include:
Drain-Source Voltage (VDS): 150V
Continuous Drain Current (ID): Up to 33A at 25°C, 24A at 100°C
Pulsed Drain Current: 140A
RDS(on): Typ. 34.5 mΩ, max. 42 mΩ @ 21A, VGS = 10V
Gate Threshold Voltage (VGS(th)): 3.0–5.0V
Maximum Gate Charge (Qg): 40 nC
Input Capacitance (Ciss): 1750 pF
Maximum Power Dissipation: 144W (Tc)
Operating Junction Temp Range: -55°C to +175°C
Gate-to-Source Voltage: ±20V
The device supports high-speed switching with turn-on delay (td(on)) and rise time (tr) of 15ns and 35ns, respectively, and typical turn-off delay and fall times of 25ns and 20ns. These attributes, combined with strong avalanche capabilities (single pulse energy up to 109 mJ), pave the way for reliable operation under both normal and fault conditions.
Thermal performance is bolstered by a low junction-to-case thermal resistance (RθJC) of just 1.045°C/W, enabling efficient heat dissipation when mounted on appropriate heatsinks or PCB layouts. Pulse-rated characteristics, ruggedness against fast di/dt and dV/dt events, and enhanced body diode performance further reinforce suitability for power conversion architectures.
The IRFS4615TRLPBF is housed in a D2PAK (TO-263AB) surface-mount package, ensuring compatibility with high-density PCB layouts and automated assembly. Key package metrics include:
Overall Dimensions: Meets JEDEC TO-263AB standard
Pin Assignment: 1—Gate, 2—Drain, 3—Source
Lead and thermal pad design facilitate effective soldering and heat removal
Mounting Type: Surface mount
The package’s design allows for robust mechanical attachment and supports the full thermal management potential of the device. Engineers should reference manufacturer-specific PCB footprint and soldering guidelines to maximize operational reliability, especially in high-power scenarios.
The IRFS4615TRLPBF is manufactured to meet stringent environmental and reliability standards, crucial for both procurement planning and compliance requirements. The device is ROHS3 compliant, ensuring lead-free construction and alignment with global restriction of hazardous substances directives. Moisture Sensitivity Level (MSL) rating is 1, indicating unlimited storage and handling capability, optimizing supply chain and production flexibility.
The MOSFET is rated unaffected by REACH regulations, easing concerns about banned chemicals and substances. Further classified as EAR99 under export control guidelines, and with its comprehensive reliability testing and documentation, engineers can be confident in the device’s long-term performance and supply assurance.
When assessing potential substitutes or equivalents for IRFS4615TRLPBF HEXFET, engineers may consider devices sharing similar electrical and mechanical parameters, notably within the HEXFET portfolio. Notable alternatives include:
IRFS4615PbF: Electrical match, alternative lead-free designation
IRFSL4615PbF: Enhanced ruggedness options, package variants
Cross-referencing parameters such as voltage, current, RDS(on), package, and gate charge is essential to ensure system compatibility and qualification. In cases where backward compatibility or alternative sourcing is required, careful evaluation of these equivalents should be conducted with respect to application-specific demands and circuit design.
The IRFS4615TRLPBF from Infineon Technologies, as part of the HEXFET power MOSFET series, delivers high current and voltage tolerance, efficient switching, and robust packaging—addressing key needs for power conversion, switching, and protection circuits. Its extensive qualification, environmental compliance, and strong support for demanding engineering applications position it as a compelling selection for both engineers and procurement professionals. Evaluating its electrical and thermal performance in context with system requirements and considering equivalent models can ensure optimal integration, reliability, and supply continuity in advanced electronic designs.
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