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| Part Number: | S29GL128S10FHIV10 |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | IC FLASH 128MBIT PARALLEL 64FBGA |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.2094 |
| 200+ | $0.0811 |
| 500+ | $0.0782 |
| 1000+ | $0.0768 |
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| Product Attribute | Attribute Value |
|---|---|
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Supplier Device Package | 64-FBGA (13x11) |
| Series | GL-S |
| Package / Case | 64-LBGA |
| Package | Tray |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Memory Type | Non-Volatile |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | Parallel |
| Memory Format | FLASH |
| Base Product Number | S29GL128 |
| Access Time | 100 ns |




The Infineon S29GL128S10FHIV10 is a 128 Mbit parallel NOR Flash memory device tailored for demanding embedded applications that require not just high storage capacity but also rapid read access, robust data retention, and proven reliability. It is part of the GL-S MIRRORBIT™ Eclipse family, covering densities from 128 Mb up to 1 Gb, fabricated on advanced 65-nm process technology. The device operates at a 3.0 V core with versatile I/O (1.65 V to VCC range), supports a ×16 data bus, and is designed for high random read and page mode speeds. Its broad temperature support—industrial (–40°C to +85°C), industrial plus (–40°C to +105°C), and up to AEC-Q100 automotive grades—makes it suitable for a wide variety of applications in automotive, industrial automation, networking equipment, and embedded systems.
The S29GL128S10FHIV10 utilizes an advanced, uniform 128-kB sector architecture and provides access to various special-purpose memory regions through its address map. The main non-volatile memory is complemented by an Infineon factory-programmed ID/CFI area for device identification and driver compatibility, as well as a secure silicon region (SSR)—a one-time programmable 1024-byte area for storing security data, both factory-locked and customer-programmable. Each sector can be individually addressed for read, program, or erase, with advanced overlay mechanisms (ASO) allowing the controller to interact with special features such as protection bits, password registers, and ECC status. The word-wide (×16) bus interface ensures compatibility and efficiency in parallel architectures.
Data integrity and security are paramount in embedded and automotive deployments. The S29GL128S10FHIV10 is equipped with multiple hardware and software safeguards. During power-up, write inhibition is enforced, and low VCC detection disables programming or erase operations until the supply is stable. Command sequencing is carefully managed by the embedded algorithm controller (EAC), which verifies legal command combinations and tolerates power cycling, hardware resets, and invalid command sequences gracefully. The device features dedicated hardware pins (such as WP#), volatile and non-volatile sector protection mechanisms, as well as secure password protection (64-bit, one-time programmable) governing access to persistent protection bits (PPBs). The secure silicon region can be permanently locked, preventing any further changes—an essential feature for secure boot or device authentication scenarios.
Key strengths of the S29GL128S10FHIV10 are its fast and flexible access modes. Random asynchronous reads occur within 90–120 ns, with subsequent page accesses within the same 32-byte-aligned page dropping to as low as 15 ns in page mode. Programming leverages an efficient 512-byte write buffer, supporting both word programming and multi-word (buffer) programming modes. This enables bulk data writes in as few as 256 words in a single buffer operation, notably reducing programming time versus legacy flash. The embedded algorithms (EAs) running in the device autonomously handle sequencing, programming, and verification—minimizing host CPU overhead.
Erase capability is equally robust: sector erase targets 128-kB blocks, while chip erase can clear the entire memory. Both program and erase operations may be suspended and resumed to maximize system availability during lengthy write or erase cycles, a critical requirement for real-time or mission-critical applications.
The device implements a comprehensive sector protection strategy via Advanced Sector Protection (ASP). Each sector is associated with both a volatile Dynamic Protection Bit (DYB) and a non-volatile Persistent Protection Bit (PPB). When either bit is set, the sector is shielded from accidental programming or erasure. Persistent protection can be managed directly or locked down via the aforementioned password mechanism, ensuring flexibility at development and test time, while providing permanent lock-down options for production units. Sector protection can be dynamically updated by the host or permanently locked through programmable bits in the lock register, and secure password protection can prevent unauthorized reprogramming even in hostile environments.
Three main mechanisms are provided for monitoring device status: a comprehensive 16-bit status register (readable via command), a legacy data polling scheme (displaying burn-in status and completion via DQ bits), and the Ready/Busy# (RY/BY#) output pin for easy system hardware monitoring. The device offers detailed reporting of program, erase, and protection errors, including write buffer aborts. When errors are detected, the host can issue software or hardware resets, or clear status registers, enabling resilient fault recovery. Automatic ECC is present on every page, transparently correcting single-bit errors and reporting correction status per page. Pages that are reprogrammed incrementally lose ECC for that page until the next sector erase, an important consideration for system designers requiring maximum data integrity.
Engineers and procurement teams will appreciate the S29GL128S10FHIV10’s wide supply range (VCC: 2.7–3.6 V; VIO: 1.65 V–VCC), robust ESD and latch-up immunity (per JESD78C), and support for multiple interface voltages. Typical random read access time is 100 ns, with page mode as fast as 15 ns. Program and erase cycles are specified for 100,000 cycles with 20 years data retention—a benchmark for reliability. The device supports a variety of package types (TSOP, 56/64-ball FBGA), all with minimized lead inductance for fast signaling in high-speed systems. Comprehensive AC and DC timing specifications ensure compatibility with a diverse set of microcontrollers and host chipsets.
The S29GL128S10FHIV10 is available in a range of robust packaging options, including 56-pin TSOP and various 64/56-ball Fortified BGA footprints (with detailed package drawings). Its industrial, industrial plus, and automotive AEC-Q100 (Grades 2 & 3) temperature ratings assure reliable operation across harsh environments. Optionally, halogen-free/lead-free material choices comply with strict environmental and health standards, and the product is manufactured to JEDEC standards for traceability and quality.
The S29GL128S10FHIV10 is part of Infineon's GL-S MIRRORBIT™ family; closely related alternatives within this family include the S29GL256S (256 Mb), S29GL512S (512 Mb), and S29GL01GS (1 Gb), which are protocol- and pin-compatible, facilitating easy scaling for different memory density needs within the same platform. Selection among these models would depend on system storage requirements, endurance, and package constraints. Additionally, the broad compliance with the Common Flash Interface (CFI/JESD68.01) ensures software compatibility with other CFI-compliant parallel NOR flash, easing replacement planning. When drop-in replacement is required, engineers should review access time, package, and operational temperature grade carefully, as these may vary slightly between models and brands.
For engineers and decision-makers evaluating non-volatile memory for embedded platforms, the Infineon S29GL128S10FHIV10 stands out for its combination of high memory density, rapid parallel access, robust sector-level protection and security, reliable long-term retention, and comprehensive status/error monitoring mechanisms. Its family compatibility, multiple environmental grades, and broad packaging support make it highly adaptable across industries—from automotive ECUs to industrial controllers and networking equipment. Careful attention to protection modes, ECC handling, and buffer operations will maximize reliability and ensure optimal performance in demanding engineering applications.
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