International Rectifier IPD50N04S308ATMA1

Mfr. Part

IPD50N04S308ATMA1

Manufacturer

Infineon Technologies (Cypress Semiconductor is an Infineon company). Y-IC is a quality distributor for Infineon. We deliver genuine parts, fast logistics, and expert support to ensure you get the best products and services.

Detailed Description

OptiMOS N‑channel power MOSFET, 40 V Vdss, 50 A (Tc) continuous drain current, ultra‑low 7.5 mΩ Rds(on) at Vgs = 10 V and Id = 50 A. Packaged in PG‑TO252‑3 (DPAK, 2 leads + tab) for low thermal resistance and easy SMT assembly. Designed for high‑current, low‑voltage switching with fast switching behavior (Qg 35 nC at 10 V, Ciss 2350 pF at 25 V). Wide operating junction temperature range −55°C to +175°C. RoHS3 compliant.

Key Features

N‑Channel, 40 V drain‑source rating (Vdss = 40 V)

50 A continuous drain current at case temperature conditions (Id = 50 A, Tc)

Very low on‑resistance: 7.5 mΩ at Vgs = 10 V, Id = 50 A

Low gate charge for fast switching: Qg = 35 nC at Vgs = 10 V

Input capacitance: Ciss = 2350 pF at Vds = 25 V

Gate threshold and limit: Vgs(th) up to 4 V; Vgs max ±20 V

Power dissipation: up to 68 W (measured at Tc conditions)

Operating junction temperature: −55°C to +175°C

Series: OptiMOS

RoHS3 compliant

Surface‑mount DPAK (PG‑TO252‑3) for compact layouts and good heat removal

Key Advantages

Low conduction loss due to very low Rds(on) → higher efficiency and cooler operation

High current handling in a compact DPAK footprint → saves PCB space

Fast, efficient switching from low Qg and optimized capacitances → better switching efficiency and lower EMI with proper layout

Robust ±20 V gate rating → better tolerance to transients on the gate

Wide temperature range → reliable in demanding thermal environments

Proven OptiMOS process technology from Infineon → consistent performance and quality

RoHS3 compliant → easier environmental compliance

Packaging

Type: PG‑TO252‑3 (DPAK), 2 leads + exposed tab

Mounting: Surface mount (SMT)

Material: Copper leadframe, epoxy mold compound, matte tin‑plated leads; halogen‑free and RoHS3 compliant

Mechanical size: DPAK body typically about 6.5 × 6.1 mm, height ~2.3 mm; see datasheet mechanical drawing for exact dimensions and land pattern

Pin configuration (typical for N‑channel DPAK):

- Pin 1: Gate

- Pin 3: Source

- Exposed tab / Pin 2: Drain (thermally and electrically connected)

Thermal characteristics: Low junction‑to‑case thermal resistance with exposed drain tab for efficient heat sinking; supports up to 68 W (Tc) power dissipation per datasheet conditions

Electrical properties reflected in package use:

- Vdss 40 V, Id 50 A (Tc), Rds(on) 7.5 mΩ at 10 V gate

- Gate charge 35 nC (10 V), input capacitance 2350 pF (25 V)

Shipment form: Bulk

Recommended gate drive: 10 V for minimum Rds(on)

Lifecycle

Status: Active and widely used in production designs

Not approaching end of life based on current public information

Direct, guaranteed pin‑to‑pin equivalents can vary by application needs (Rds(on), Qg, SOA, speed). For the most accurate cross and form‑fit‑function alternatives, please contact Y‑IC sales via our website. Our team will propose vetted alternates from Infineon and other top brands to match your exact requirements.

Key Application Areas

Synchronous rectification and primary/secondary side switching in DC‑DC converters (12 V class)

High‑side or low‑side load switching in power distribution

Motor drivers and brushed motor control in low‑voltage systems

Power OR‑ing, hot‑swap, and battery protection for 12 V rails

Point‑of‑load converters, server/telecom power, industrial controls

Power tools, drones, robotics, LED drivers (low‑voltage high‑current switching)

Datasheet

Y‑IC hosts the most authoritative datasheet for IPD50N04S308ATMA1 on our product page. For the latest, complete electrical, thermal, and mechanical specifications, download the datasheet now on this page.

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