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| Part Number: | MAX17000ETG+ |
|---|---|
| Manufacturer/Brand: | Analog Devices Inc./Maxim Integrated |
| Part of Description: | IC PWM CTLR DDR/DDR2/DDR3 24TQFN |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $4.7639 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Supply | 4.5V ~ 5.5V |
| Supplier Device Package | 24-TQFN (4x4) |
| Series | Quick-PWM™ |
| Package / Case | 24-WFQFN Exposed Pad |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
| Current - Supply | 2mA |
| Base Product Number | MAX17000 |
| Applications | Memory, DDR2/DDR3 Regulator |




The MAX17000ETG+ from Analog Devices Inc./Maxim Integrated is an advanced PWM controller designed as a complete power management solution for notebook DDR, DDR2, and DDR3 memory systems. It integrates a high-efficiency step-down switching controller for VDDQ, a ±2A source/sink LDO regulator for VTT, and a low-current reference buffer for VTTR. Housed in a 24-pin, 4mm x 4mm TQFN package, the MAX17000ETG+ targets space-constrained applications that require reliable and accurate memory supply rails. Application areas include notebook computers and other systems demanding robust, multi-rail DDR memory support.
Step-down SMPS with Maxim’s Quick-PWM™ architecture for ultra-fast transient response (100ns typical), supporting programmable switching frequency from 200kHz to 600kHz.
VDDQ output voltage available as preset 1.5V/1.8V or adjustable from 1.0V to 2.5V, with 1% regulation accuracy over line and load.
Source/sink VTT linear regulator providing ±2A burst current with reduced output capacitance requirement and ±5mV deadband for precise tracking.
Integrated VTTR reference buffer sourcing/sinking ±3mA, ensuring tight referencing for memory controllers.
Multiple protection mechanisms: overvoltage, undervoltage, valley current limit, and thermal protection circuits.
User-selectable operating modes (SKIP, forced-PWM, standby), power-good indicators for both VDDQ and VTT, and soft-start/soft-shutdown functionality for power sequencing.
The functional core of the MAX17000ETG+ is its Quick-PWM control architecture, which supports efficient operation under a wide range of input/output ratios—crucial for notebook applications dominated by large input voltage swings. The device incorporates a constant-on-time, pseudo-fixed-frequency control scheme with voltage feed-forward, reducing complexity and dependence on output capacitor ESR for stability.
The VDDQ step-down regulator supports both fixed and adjustable output configurations, enabling flexibility for various DDR memory generations. The VTT LDO regulator, optimized for fast bidirectional current changes, requires minimal output capacitance due to its ±5mV deadband design. VTTR, a reference output, maintains accuracy for sensitive memory control logic. The MAX17000ETG+ ties these functions together to power all essential DDR memory rails with a single, highly integrated chip.
Engineers can tailor the MAX17000ETG+ operation via three primary modes:
Power-Efficient SKIP Mode: Automatic transition to pulse-frequency modulation at light loads, minimizing quiescent current and maximizing efficiency.
Forced-PWM Mode: Maintains constant frequency for noise-sensitive environments and steady load conditions, at the expense of higher idle power draw.
Standby Mode: Reduces overall current consumption and disables VTT output during system standby (VTT is high-impedance, VTTR remains active). The controller operates in a reduced-power valley comparator mode, suitable when no fast load transients are present.
Mode selection enables systems to dynamically balance efficiency, noise, and responsiveness based on operational state, which is especially advantageous in portable designs like notebooks where battery savings and low EMI are priorities.
A comprehensive protection suite is integral to the MAX17000ETG+. Valley current-limit protection prevents the inductor current from exceeding safe margins; in forced-PWM mode, negative current limiting restricts excessive reverse current flow. Dual power-good windows (PGOOD1 for switching output and PGOOD2 for VTT) enable monitoring and system-level response to out-of-range events.
The IC supports selectable overvoltage protection (OVP), undervoltage protection (UVP), and thermal shutdown at 160°C, with clearly defined recovery strategies via SHDN toggling or power cycling. Soft-start and soft-shutdown routines avoid excessive inrush or discharge currents, providing predictable ramping and sequencing for both SMPS and LDO rails. Such protections directly address reliability and safety standards found in modern high-density notebook memory subsystems.
Successful deployment of the MAX17000ETG+ hinges on careful consideration of input voltage range, maximum load current, switching frequency selection, and inductor sizing. Designers are advised to:
Accurately bracket the worst-case input supply window, accounting for system-level drops.
Size the inductor for optimal transient response and efficiency, typically aiming for ripple ratios between 20% and 50%.
Select switching frequencies balancing EMI, size, and efficiency—higher frequencies enable smaller passives but increase switching losses.
Set the valley current limit above the anticipated maximum load, including thermal and tolerance margins in the sensing elements to avoid nuisance trips.
In terms of MOSFET sizing, a trade-off between conduction (RDS(ON)) and switching (gate charge, output capacitance) losses must be carefully balanced, with low-side devices prioritized for minimal conduction losses and high-side devices sized to control switching losses under worst-case VIN scenarios. The design should always validate thermal performance with representative loading in the actual PCB to ensure reliable long-term operation.
Inductor: Select a low DC resistance ferrite or powder-core inductor, sized for the full-load saturation current and targeted ripple ratio.
Capacitors: For output filtering, low-ESR polymer, tantalum, or safe ceramic types are recommended. Ripple and transient performance drive both capacitance and ESR requirements; design formulas provide starting values but empirical testing is beneficial.
Input filtering generally favors ceramics or aluminum electrolytics with RMS current ratings exceeding half the load current.
MOSFETs: High-side FETs must balance RDS(ON) and switch loss; low-side FETs should have the lowest practical RDS(ON) but still be cost-effective.
VTT/VTTR outputs require minimum capacitance for stability; for VTT, at least 9μF is required (more for higher currents) and for VTTR at least 0.33μF ceramic is standard.
The high switching currents and sensitive analog circuits within the MAX17000ETG+ demand meticulous PCB layout:
Minimize loop area and trace length in all high-current switching paths and return lines (input capacitors, MOSFETs, inductor, output capacitors).
Place the controller close to the low-side MOSFET with short, wide gate-drive traces.
Maintain clear separation between noisy switching nodes and precision signal traces (such as voltage sense and reference routes).
Employ a staged ground strategy, connecting analog and power grounds at a single point under the IC.
Heat management must be considered, especially for MOSFETs and the IC’s exposed pad. Max dissipation is 2.22W at 70°C ambient, with derating for higher temperatures.
The MAX17000ETG+ is available in a 24-pin, 4mm x 4mm TQFN package with an exposed pad to aid thermal dissipation. It is rated for operation from -40°C to +85°C, with integrated over-temperature protection. All pins have well-defined absolute maximum ratings—strict adherence is necessary to ensure device reliability.
While the MAX17000ETG+ offers a high level of integration tailored to DDR/DDR2/DDR3 memory rails in notebook PCs, engineers evaluating alternatives may consider functionally similar memory power-management solutions from other well-established analog IC vendors. When cross-referencing, focus on products providing:
Multiple output rails (VDDQ, VTT, reference buffer)
Adjustable and preset output voltages for DDR memory standards
Source/sink linear termination capability with wide dynamic range
Fast load transient response and comprehensive protection circuitry
Potential candidates could include the Richtek RT8239A, Intersil ISL6522, or Texas Instruments TPS51200, though differences in maximum ratings, packaging, and feature set should be carefully analyzed against specific design constraints.
The MAX17000ETG+ from Analog Devices Inc./Maxim Integrated stands out as a robust, integrated solution addressing the demanding power requirements of contemporary DDR/DDR2/DDR3 memory subsystems in portable electronics. Its combination of Maxim’s Quick-PWM architecture, versatile source/sink LDO, reference buffer, diverse protection mechanisms, and flexible configuration options enables precise power delivery, high efficiency, and streamlined BOM in space-limited designs. Selection and deployment of the MAX17000ETG+ involve engineering diligence in power architecture planning, passive selection, and PCB layout, but ultimately deliver a reliable, high-performance memory power platform for modern notebook and similar applications.
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