SAMSUNG K3RG2G20CM-MGCJ

Mfr. Part

K3RG2G20CM-MGCJ

Manufacturer

Samsung Electro-Mechanics

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Detailed Description

K3RG2G20CM-MGCJ is a Samsung K3R-series mobile DRAM–class Specialized IC within Integrated Circuits (ICs). It is designed for high-bandwidth, low-power operation in space‑constrained systems such as smartphones, tablets, wearables, and embedded/IoT devices. This device pairs wide I/O architecture with aggressive power‑saving modes to maximize performance per watt.

Availability details: Package/Case code 869 (per listing), Date/DC 1616+, in stock quantity 2000 units (contact us to confirm real-time stock and packing).

Key Features

High bandwidth mobile DRAM architecture for fast data transfer in compact designs

Low-power design with multiple standby/self‑refresh modes for extended battery life

Wide I/O data bus (x16/x32 lane configurations are common in this family)

On‑die calibration/termination and training features for signal integrity (per datasheet)

Temperature-compensated self‑refresh and partial‑array self‑refresh to cut power

Broad ecosystem support in mobile and embedded platforms

RoHS/REACH compliant, lead‑free package

Key Advantages

Excellent performance per watt for battery‑powered products

Proven Samsung process and quality for stability and longevity

Compact FBGA footprint enables dense PCB layouts

Scalable family with multiple speed bins and package options for easy design fit

Strong supply chain through Y-IC for consistent sourcing and support

Packaging

Type: Fine‑pitch BGA (FBGA) memory package, suited for high‑speed mobile interfaces

Package/Case code: 869 (as specified in listing)

Material: Molded epoxy, lead‑free terminals; RoHS and REACH compliant

Size: Compact FBGA outline (refer to datasheet for exact body size and ball pitch)

Pin/Ball configuration: Grid array with DQ/DQS/CK/CA and power/ground balls; common ball counts in this family include 178/200 (confirm exact map in the datasheet)

Moisture Sensitivity: MSL per JEDEC J‑STD‑020 (typical mobile DRAM FBGA is MSL 3; verify for this code)

Thermal characteristics: Low junction rise due to low operating power; θJA depends on board stack‑up and airflow. Follow datasheet and board‑level guidelines for heat spreading.

Electrical properties: Low‑voltage mobile DRAM supply rails (core and I/O voltages per device speed/bin); supports standard mobile DRAM timing modes. Always confirm voltage/timing requirements in the official datasheet before design.

Lifecycle

Status: Mature, widely used in production platforms. No public EOL notice identified in listing data. Supply may vary by region and date code; check with us for current status.

Equivalent/alternative models (verify pinout, density, and timings before use):

- Same‑family Samsung options: K3RG2G20C* with different suffixes (e.g., K3RG2G20CM‑MGCH / ‑MGCI / ‑MGCx speed/package bins)

- Other Samsung mobile DRAM families with comparable density/bus width (LPDDR4/LPDDR4X depending on your requirement)

- Cross‑vendor LPDDR alternatives (design‑level validation required):

- Micron MT53 series LPDDR4/LPDDR4X (e.g., MT53ExxxM32/64Dx variants matched to your density and width)

- SK hynix H9 series LPDDR4/LPDDR4X (e.g., H9xxxx variants with equivalent capacity and x32/x16 bus)

- Winbond/ESMT mobile DRAM where available with matching specs

If you need a drop‑in replacement or a vetted cross, contact Y-IC. We will propose pin‑compatible options and provide comparison data.

Key Application Areas

Smartphones and tablets

Wearables and AR/VR devices

Single‑board computers and embedded controllers

IoT gateways and edge AI modules

Automotive infotainment and telematics (non‑safety domains, confirm temperature grade)

Networking, routers, and storage buffers requiring low‑power high‑speed memory

Datasheet

Y-IC hosts the most authoritative, up‑to‑date datasheet and technical documents for K3RG2G20CM‑MGCJ. For accurate pin maps, electrical limits, timing specs, and packaging dimensions, download the datasheet from this page now.

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