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| Part Number: | STTH8R04D |
|---|---|
| Manufacturer/Brand: | STMicroelectronics |
| Part of Description: | DIODE GEN PURP 400V 8A TO220AC |
| Datasheets: |
|
| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.7014 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Technology | Standard |
| Supplier Device Package | TO-220AC |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Reverse Recovery Time (trr) | 50 ns |
| Package / Case | TO-220-2 |
| Product Attribute | Attribute Value |
|---|---|
| Package | Tube |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Mounting Type | Through Hole |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |
| Current - Average Rectified (Io) | 8A |
| Capacitance @ Vr, F | - |
| Base Product Number | STTH8 |




The STTH8R04D from STMicroelectronics represents a robust solution for high-speed rectification in switching-mode power supplies, base drive circuits, and high-frequency inverter applications. Engineered as a general-purpose diode, its core capabilities include a 400 V maximum reverse voltage and an 8 A average forward current rating, packaged in a TO-220AC form factor for reliable through-hole mounting. Embodying ST’s advanced planar platinum doping technology, the STTH8R04D is designed to excel in environments where ultrafast recovery and minimal switching losses are critical for system efficiency and performance.
Engineers tasked with component selection for demanding power conversion circuits will value several prominent features of the STTH8R04D:
Ultrafast reverse recovery: This device minimizes charge stored during conduction, reducing reverse recovery losses.
High frequency and pulsed current operation: Reliable performance is ensured even with rapid switching cycles and transient conditions common in advanced inverter designs.
Insulating voltage rated at 2500 V RMS (sine): Facilitates use in circuits requiring strong isolation between the semiconductor and the mounting hardware.
High junction temperature tolerance: The diode supports elevated operational temperatures, allowing flexibility in thermally challenging designs.
Availability in multiple package options: While the TO-220AC package is standard, devices in D²PAK or TO-220AC Ins provide added versatility for various mounting and insulation requirements.
ECOPACK® 2 compliance: Selected packages adhere to stringent environmental standards, supporting eco-friendly and responsible procurement needs.
For engineers evaluating the STTH8R04D, a clear understanding of its electrical and thermal parameters is essential in matching device capability to application requirements. Key specifications include:
Maximum repetitive peak reverse voltage (VRRM): 400 V
Average forward current (IF(AV)): 8 A
Peak forward surge current: Suitable for short-duration high current pulses, based on diode and system limits
Junction temperature range: Supports operation at elevated temperatures, enabling use in high-density, high-power boards
Thermal management: Package design prioritizes conduction cooling. Installation torque recommendations (0.55-0.70 N·m for TO-220AC/TO-220AC Ins) ensure optimal heat dissipation and electrical contact.
When designing for conduction losses, the datasheet provides an empirical calculation:
\[P = 0.83 \times I_{F(AV)} + 0.034 \times I_{F(RMS)}^2\]
where \(I_{F(AV)}\) is the average forward current, and \(I_{F(RMS)}\) the RMS forward current.
Dynamic properties—such as recovery time and behavior under rapid current changes—are crucial in power conversion topologies operating at high frequency. The STTH8R04D demonstrates:
Forward voltage drop characteristic scalable with forward current—minimizing conduction losses at moderate operating points.
Reverse recovery time optimized for swift switching, supporting enhanced efficiency in synchronous rectification and snubber circuits.
Recovery charge and peak reverse recovery current remain well-controlled across varying di/dt, aiding in electromagnetic compatibility and reducing impact on associated switching devices.
Dynamic parameter stability across junction temperatures, supporting consistent performance even in thermally variable scenarios.
Forward recovery time and transient voltage profiles are also optimized, further supporting use in topologies where switch timing and device stress must be tightly regulated.
Packaging not only determines assembly compatibility but also influences electrical isolation and thermal performance. The STTH8R04D is available in several formats:
TO-220AC: Standard insulated package ensuring safe through-hole assembly and reliable mounting.
TO-220AC Ins: Offers enhanced insulation, supporting applications needing strict isolation between heatsink and diode body.
D²PAK: Facilitates surface mount for high-density layouts while maintaining efficient thermal paths.
The epoxy molding compound meets UL94 V0 flammability standards, supporting compliance with global safety norms.
Mechanical data including recommended mounting torque values and footprint dimensions are provided, aiding design for robust assembly, heat sinking, and long-term reliability.
Modern procurement protocols often require detailed environmental compliance information. The STTH8R04D addresses these needs by offering:
ECOPACK® 2 compliant packaging (for D²PAK on demand), supporting efforts to reduce hazardous substances and improve supply chain sustainability.
Package material selection and manufacturing processes reflect adherence to established global standards (refer to www.st.com for grade definitions and further specification details).
Component engineers routinely evaluate alternatives and second sources. While the STTH8R04D offers a specific blend of speed, ruggedness, and ease-of-mount described above, equivalent models may exist within the STMicroelectronics portfolio or from other manufacturers offering similar reverse voltage, current rating, and packaging. When comparing potential replacements, pay close attention to recovery time, forward voltage drop, junction temperature tolerance, and certifications for insulation and compliance. Cross-checking these parameters enables informed substitution while maintaining system reliability and regulatory adherence.
The STTH8R04D ultrafast recovery diode from STMicroelectronics is engineered for optimal performance in fast-switching, high frequency, and demanding power conversion applications. Its combination of low switching loss, robust packaging, advanced planar technology, and wide environmental compliance makes it well-suited for engineers focused on system efficiency and reliability. Careful alignment of device characteristics with application needs—supported by detailed datasheet information—ensures optimal selection for both new designs and legacy circuit upgrades. The inclusion of package, thermal, and compliance guidance further empowers procurement teams and engineers to integrate the STTH8R04D confidently into competitive, high-performance power electronics projects.
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