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| Part Number: | STP3NK90ZFP |
|---|---|
| Manufacturer/Brand: | STMicroelectronics |
| Part of Description: | MOSFET N-CH 900V 3A TO220FP |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.5517 |
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220FP |
| Series | SuperMESH™ |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 25W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Package | Tube |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.7 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Base Product Number | STP3NK90 |




The STP3NK90ZFP, manufactured by STMicroelectronics, is a high-voltage, N-channel power MOSFET optimized for robust performance in demanding switching environments. With a voltage rating of 900 V and a continuous current rating of 3 A, this device is built on ST's proprietary SuperMESH technology—a refinement of the company’s PowerMESH process. Housed in the TO-220FP fully isolated through-hole package, the STP3NK90ZFP enables both efficient thermal management and straightforward integration into a variety of circuit designs. These attributes make it particularly suitable for power engineers and procurement professionals seeking reliable, high-efficiency components for power switching applications such as switched-mode power supplies, motor drives, and industrial controls.
The technological advancements encapsulated in the STP3NK90ZFP establish it as a prime candidate for challenging high-voltage applications. Its key features include:
100% avalanche tested silicon for enhanced ruggedness and reliability.
A typical R_DS(on) of 3.6 Ω, contributing to low conduction losses and improved system efficiency.
Minimization of gate charge and extremely low intrinsic capacitance, enabling fast and efficient switching with reduced power dissipation in the gate drive circuitry.
Integrated Zener protection, safeguarding the gate against voltage spikes—a vital benefit during switching transients in high-voltage environments.
High dv/dt capability, permitting operation in circuits characterized by significant voltage slew rates.
Together, these features help engineers maximize system robustness while minimizing switching and conduction losses.
A deep understanding of MOSFET electrical ratings is essential during the component selection process. The STP3NK90ZFP’s absolute maximum ratings include:
Drain-source voltage (V_DS): 900 V
Continuous drain current (I_D): 3 A (Tc = 25°C)
Power dissipation: 25 W (Tc = 25°C)
The device’s on-state resistance (R_DS(on)) is specified at 3.6 Ω typically, ensuring low resistive losses during operation. The MOSFET is competent in handling avalanche conditions, verified through 100% avalanche testing. Dynamic properties such as minimized gate charge and low capacitance are designed for fast transition times—critical for high-frequency switch-mode topologies. Key characteristic curves provided by STMicroelectronics demonstrate device behavior across parameters such as temperature, gate charge, on-resistance, and gain, giving engineers the data needed to predict in-circuit performance accurately. Comprehensive information is available for essential parameters like transfer characteristics, threshold voltage variation, and switching time performance under standard test configurations.
Engineers commonly deploy the STP3NK90ZFP in a range of switching applications, leveraging its high-voltage rating and controlled switching behavior. Use cases include primary-side switches in off-line power converters, active clamps, and high-voltage secondary rectifiers. When considering this device, important engineering aspects include:
Avalanche ruggedness: Ensures the device can safely handle energy from inductive load switching and non-ideal circuit interruptions.
dv/dt tolerance: Allows use in topologies with rapid voltage excursions (e.g., flyback or boost converters).
Thermal performance: With 25 W power dissipation and the isolated TO-220FP package, the device supports both safe thermal design with moderate PCB heatsinking and enhanced safety via full package isolation.
Zener-protected gate: Simplifies driver design and increases reliability in high-transient/noisy environments.
Environmental and Regulatory Compliance: The device is ROHS3 compliant and unaffected by REACH directives, supporting use in global applications.
The STP3NK90ZFP is offered in a robust TO-220FP full-pack package—a widely recognized industry format for isolated power transistors. This through-hole package combines electrical insulation, mechanical ruggedness, and good thermal performance, making it suitable for both industrial and consumer applications where isolation requirements dictate package choice. Detailed mechanical drawings and recommended footprint layouts are provided to support accurate PCB design and component mounting. The fully-molded case simplifies automatic assembly and insulation compliance, while maintaining compatibility with conventional soldering, inspection, and thermal management processes. Packaging options support standard tape and reel for automated assembly.
In certain designs, engineers may require alternative sourcing options or pin-compatible replacements for the STP3NK90ZFP. STMicroelectronics also supplies the STD3NK90ZT4, a closely related device featuring similar SuperMESH technology and electrical characteristics, but available in the DPAK (TO-252) surface-mount package for space-constrained or automated-assembly applications. When selecting any equivalent model, ensure that voltage, current, power, package type, and dynamic parameters align with application needs, and review datasheets for any subtle differences in test conditions or qualification standards.
: Selecting the STP3NK90ZFP for High-Voltage Switching Designs
The STP3NK90ZFP from STMicroelectronics offers a compelling combination of high-voltage handling, robust avalanche and switching behavior, integrated gate protection, and regulatory compliance—all in a thermally efficient and isolated TO-220FP package. Its advanced SuperMESH process technology and well-defined electrical characteristics ensure that engineers can design for both performance and reliability in demanding power switching scenarios. Together with available equivalent models, the STP3NK90ZFP provides flexibility for procurement and design teams, supporting a wide spectrum of high-voltage applications where reliability and efficiency are paramount.
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