STMicroelectronics STL160N4F7

Summary of the STL160N4F7 Power MOSFET Product

The STL160N4F7 from STMicroelectronics is a high-performance, N-channel power MOSFET designed primarily for low-voltage, high-current switching applications. Housed in the compact PowerFLAT 5x6 surface-mount package, this device is optimized for applications where a low-profile form factor and high power handling are critical. With a drain-source breakdown voltage (Vds) of 40V, a continuous drain current up to 120A (Tc = 25°C), and an ultra-low maximum on-resistance of 2.5mΩ, the STL160N4F7 offers significant advantages in efficiency and thermal management. Its RoHS3 compliance, REACH-unaffected status, and high reliability make it suitable for demanding industrial and commercial designs.

Main Attributes and Technologies of the STL160N4F7 Power MOSFET

At the heart of the STL160N4F7 is STMicroelectronics' STripFET™ F7 technology, an advanced trench gate structure that substantially lowers on-state resistance and optimizes the device’s figure of merit (FoM). This reduction in both static (Rds(on)) and dynamic (gate charge, capacitance) losses translates into less heat generation and higher overall system efficiency. The PowerFLAT 5x6 package supports efficient surface mounting, enhanced thermal performance, and facilitates layout in high-density PCBs. Key features include:

Among the lowest Rds(on) values on the market for 40V MOSFETs

Excellent FoM combining low gate charge (Qg) and on-resistance

Low Crss/Ciss ratio for improved EMI immunity

High avalanche ruggedness supporting robust operation in harsh electrical environments

Enhanced switching speed enabled by a typical total gate charge of just 29nC

Electrical Specifications of the STL160N4F7 Power MOSFET

To support reliable system design, the STL160N4F7 offers the following key electrical ratings (Tc = 25°C unless otherwise specified):

Drain-Source Voltage (Vds): 40V

Continuous Drain Current (Id, Tc = 25°C): 120A

Continuous Drain Current (Id, Tc = 100°C): 108A

Pulsed Drain Current (Idm, Tc = 25°C): 480A

Gate-Source Voltage (Vgs): ±20V

Maximum Power Dissipation (Ptot, Tc = 25°C): 111W

Gate Threshold Voltage (Vgs(th)): 2V (min), 4V (max)

Maximum Rds(on) @ Vgs = 10V, Id = 16A: 2.5mΩ (typical 2.1mΩ)

These values highlight the device’s suitability for high-current, low-voltage power conversion, synchronous rectification, and motor control applications.

Thermal and Structural Properties of the STL160N4F7 Power MOSFET

Thermal management is an essential consideration in power system design. The STL160N4F7 excels in this area with a junction-to-case thermal resistance (Rthj-case) of 1.35°C/W, supporting efficient heat transfer to the PCB or an external heatsink. The junction-to-PCB resistance stands at 31.3°C/W for FR-4 board implementations (1 inch², 2oz Cu). The device’s operating junction temperature range extends from -55°C to 175°C, making it robust and versatile in a range of temperature environments. Mechanically, the PowerFLAT 5x6 package accommodates automated surface mounting processes, offering reliability for high-volume manufacturing.

Switching Characteristics and Dynamic Response of the STL160N4F7 Power MOSFET

Fast and efficient switching is fundamental for high-frequency power electronics. The STL160N4F7 demonstrates impressive switching metrics:

Input capacitance (Ciss): 2300pF

Output capacitance (Coss): 786pF

Reverse transfer capacitance (Crss): 43pF

Total gate charge (Qg): 29nC (Vgs = 10V, Id = 32A)

Turn-on delay time (td(on)): 14ns

Rise time (tr): 6.6ns

Turn-off delay time (td(off)): 19ns

Fall time (tf): 5.7ns

These characteristics are significant for designers focusing on minimizing switching losses and optimizing EMI performance in switch-mode power supplies and synchronous rectification circuits.

Source-Drain Diode Features of the STL160N4F7 Power MOSFET

The integral body diode of the STL160N4F7 provides effective freewheeling and commutation paths for many power conversion topologies. Key parameters include:

Diode forward voltage (Vsd): 1.2V @ 32A

Reverse recovery time (trr): 55ns

Reverse recovery charge (Qrr): 67nC

Reverse recovery current (Irrm): 2.4A

These fast recovery characteristics benefit high-efficiency synchronous rectification and half/full-bridge converter stages, where diode losses and recovery times can significantly affect overall system efficiency.

Common Usage Situations for the STL160N4F7 Power MOSFET

The STL160N4F7’s combination of high current rating, low on-resistance, and robust switching performance makes it ideal for:

Synchronous rectification in AC-DC and DC-DC converters

Low voltage, high current load switching

Motor drive circuits for industrial automation, e-mobility, and robotics

Power OR-ing and hot-swap protection in mission-critical power distribution

Secondary-side switching topologies where compact layout and efficiency are essential

Alternative or Substitute Models for the STL160N4F7

In real-world engineering, evaluating potential substitutes is vital for risk mitigation and supply chain flexibility. For the STL160N4F7, engineers might consider devices with similar parameters:

40V N-channel Power MOSFETs with maximum Rds(on) ≤ 2.5mΩ

Devices in similar PowerFLAT or power-DFN packages enabling high-current surface-mount solutions

Alternative STripFET™ technology models from STMicroelectronics with comparable gate charge and thermal ratings

It is essential to compare not only on-state resistance and package but also dynamic parameters such as total gate charge, recovery time, and avalanche energy rating to ensure true functional equivalence when selecting replacements.

Conclusion

on STL160N4F7 Power MOSFET selection

For engineers and procurement teams seeking a modern, high-efficiency, and thermally robust N-channel MOSFET, the STL160N4F7 from STMicroelectronics stands as an optimal choice in the 40V class. Its standout features—ultra-low Rds(on), high current handling, compact package, and fast switching dynamics—address the stringent demands of modern power electronics. By enabling designers to unlock higher power densities and improved thermal reliability, the STL160N4F7 promotes innovation in advanced power systems while safeguarding supply chain flexibility through its RoHS3 and REACH-compliant status and the availability of potential equivalents. Careful attention to these device attributes will reward engineers with robust, efficient, and cost-effective end products.