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| Part Number: | 2N7002BKM,315 |
|---|---|
| Manufacturer/Brand: | Nexperia |
| Part of Description: | MOSFET N-CH 60V 450MA DFN1006-3 |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.8534 |
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-883 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 360mW (Ta) |
| Package / Case | SC-101, SOT-883 |
| Package | Tape & Reel (TR) |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Base Product Number | 2N7002 |




The Nexperia 2N7002BKM,315 is a compact, N-channel enhancement mode Field-Effect Transistor (FET) that targets a variety of high-reliability, space-sensitive electronic applications. Housed in the ultra-small SOT883 (SC-101) surface-mount plastic package, this device leverages advanced trench MOSFET technology to achieve a high level of integration and performance. With a maximum drain-source voltage of 60 V and continuous current handling up to 450 mA, the 2N7002BKM,315 is engineered for robust switching operations in modern circuits that demand high efficiency, fast switching, and minimal board real estate consumption.
At the core of the Nexperia 2N7002BKM,315’s appeal is a blend of features designed to ease system integration and boost circuit reliability. Notably, the MOSFET is logic-level compatible, enabling direct interface with typical microcontroller and logic IC outputs without the need for additional level-shifting components. This enhances design simplicity and reduces the overall bill of materials.
Trench MOSFET technology endows the 2N7002BKM,315 with very fast switching characteristics, supporting high-speed operation in digital and analog switching applications. Electrostatic discharge (ESD) protection up to 2 kV is integrated, ensuring robust handling and improved reliability in manufacturing and operational environments. Further, qualification to AEC-Q101 underscores its suitability for demanding automotive and industrial segments where quality and endurance are critical.
The 2N7002BKM,315 is specified for a drain-source voltage (V_DS) of up to 60 V and a continuous drain current (I_D) of 450 mA at ambient temperature. The maximum allowable total power dissipation is 360 mW (under typical PCB mounting conditions). Its drain-source on-state resistance (R_DS(on)) varies with gate-source voltage and operating temperature, delivering low values that support efficient switching and minimal conduction losses.
Thermal management is facilitated through the device’s small form-factor package, which is optimized for FR4 PCB mounting either with a standard footprint or expanded copper mounting pad for improved heat dissipation. The MOSFET’s transient and steady-state thermal impedance characteristics allow designers to predict temperature rise and select appropriate PCB layouts to ensure reliable operation under various duty cycles.
Practical uses of the 2N7002BKM,315 span a spectrum of applications requiring fast, low-loss electronic switches. Common deployment scenarios include relay drivers, high-speed line drivers, low-side load switches, and other general-purpose switching circuits. Its compact form and logic-level capability make the device especially well-suited to space-constrained automotive control units, portable devices, and industrial automation equipment, where efficient signal-level switching with robust ESD protection is a must.
A familiar scenario might involve the 2N7002BKM,315 operating as a low-side switch in a compact module, directly driven by microcontroller GPIOs to provide power sequencing or load control. Its swift switching enables high-speed data or signal path isolation, contributing to improved signal integrity and energy efficiency.
Package Outline and Soldering Guidelines for the 2N7002BKM,315
The Nexperia 2N7002BKM,315 is encapsulated in a leadless SOT883 package, measuring 1.0 x 0.6 x 0.5 mm with three solder lands. Its ultra-small package is compatible with modern pick-and-place assembly and optimized for high-density PCB designs.
Reflow soldering is recommended to achieve reliable board-level integration. Standard soldering footprints and paste patterns for the SOT883 should be used to ensure optimal mechanical and electrical connectivity. For maximum thermal and electrical performance, designers should refer to manufacturer guidelines on copper pad area and PCB layout strategies.
In terms of reliability and quality, the 2N7002BKM,315 stands out due to its AEC-Q101 automotive qualification—a hallmark of robust design and long-term endurance under stressful environmental conditions. The device’s ESD protection at up to 2 kV aligns with handling needs in automated or manual assembly, reducing the risk of latent defects. These attributes make it a dependable choice not only for automotive modules but for any critical application where product longevity and stability are essential.
For engineers and procurement specialists, evaluating potential alternatives is a practical step in the component selection process. The Nexperia 2N7002BKM,315 is a member of a widely adopted MOSFET class, and its characteristics—60 V rating, trench technology, logic-level drive, and SOT883 package—are mirrored in select devices from other vendors as well as other Nexperia models within similar voltage/current ranges and footprints.
When considering a substitute, it is critical to match not only the voltage and current ratings but also on-state resistance, switching speed, ESD resilience, and package compatibility. Evaluating supplier-specific nuances such as qualification standards (e.g., AEC-Q101) and documentation support will ensure seamless drop-in replacement and maintain long-term application reliability.
The Nexperia 2N7002BKM,315 delivers a compelling solution for compact, efficient, and high-reliability switching needs across a diverse electronics landscape. With its advanced trench MOSFET core, logic-level compatibility, robust ESD protection, and AEC-Q101 automotive qualification, the device stands out as a trustworthy component for engineers seeking to balance performance, integration, and board space in both design and procurement decisions. For demanding scenarios in automotive, industrial, or consumer electronics, the 2N7002BKM,315 warrants close consideration as part of a strategic component portfolio.
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2N7002BKM,315Nexperia USA Inc. |
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