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| Part Number: | DG412DYZ-T |
|---|---|
| Manufacturer/Brand: | Renesas Electronics Corporation |
| Part of Description: | IC SWITCH SPST-NOX4 35OHM 16SOIC |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $2.0632 |
| 10+ | $2.0157 |
| 30+ | $1.9855 |
| 100+ | $1.9539 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Supply, Single (V+) | 5V ~ 44V |
| Voltage - Supply, Dual (V±) | ±5V ~ 20V |
| Switch Time (Ton, Toff) (Max) | 175ns, 145ns |
| Switch Circuit | SPST - NO |
| Supplier Device Package | 16-SOIC |
| Series | - |
| Package / Case | 16-SOIC (0.154', 3.90mm Width) |
| Package | Tape & Reel (TR) |
| Operating Temperature | -40°C ~ 85°C (TA) |
| On-State Resistance (Max) | 35Ohm |
| Product Attribute | Attribute Value |
|---|---|
| Number of Circuits | 4 |
| Multiplexer/Demultiplexer Circuit | 1:1 |
| Mounting Type | Surface Mount |
| Current - Leakage (IS(off)) (Max) | 100pA |
| Crosstalk | -85dB @ 1MHz |
| Charge Injection | 5pC |
| Channel-to-Channel Matching (ΔRon) | - |
| Channel Capacitance (CS(off), CD(off)) | 9pF, 9pF |
| Base Product Number | DG412 |
| -3db Bandwidth | - |




The DG412DYZ-T from Renesas Electronics is a monolithic quad single pole single throw (SPST) CMOS analog switch, designed to meet the demands of precision analog signal routing in a variety of modern electronic systems. As a member of the DG411, DG412, and DG413 series, this component stands out for its ability to seamlessly replace the widely-used DG211 and DG212 series, offering improved performance parameters. Housed in a compact 16-lead SOIC (Small Outline Integrated Circuit) package, the DG412DYZ-T is tailored to accommodate high-voltage operations and low ON-resistance switching, making it a compelling solution for engineers focused on both signal integrity and board-space optimization.
The device contains four independently controlled SPST switches with logic compatible with both TTL and CMOS input levels, which provides flexibility in digital control systems. Utilizing a high-voltage silicon-gate CMOS process, the DG412DYZ-T is engineered for robustness against latch-up, an advantage that supports reliability in industrial and communication equipment. Its bilateral design allows it to handle AC or bidirectional signals with equally matched characteristics across all switches.
The DG412DYZ-T offers several noteworthy electrical and functional properties that address common challenges in precision signal switching:
ON-resistance: Maximum of 35Ω, enabling low-loss signal routing and minimal voltage drop across the switch during conduction.
Switching speed: Fast operation with a maximum turn-on time (tON) of 175ns and turn-off time (tOFF) of 145ns, supporting high-speed multiplexing and real-time test applications.
Power consumption: Extremely low (PD <35μW), advantageous for battery-operated and energy-sensitive systems.
Charge injection: Reduced to favor applications such as sample-and-hold circuits where signal precision is crucial.
Voltage handling: Supports analog signal swing up to ±20V or from +5V to +44V, making it suitable for both split and single-supply configurations.
Logic compatibility: Accepts digital logic signals from 0.8V (maximum for logic low) and 2.4V (minimum for logic high), ensuring smooth integration into mixed-signal control environments.
The device also exhibits very low ON-resistance variation over a ±15V analog input range, a particularly important parameter when preserving waveform fidelity across varying signal amplitudes.
The DG412DYZ-T is available in industry-standard 16-lead SOIC packages, as well as other configurations such as 16-pin PDIP and TSSOP for a range of assembly requirements. This diversity caters to both surface-mount (SMT) and through-hole board layouts, extending its suitability across prototyping, automated volume manufacturing, and legacy system upgrades.
Pin assignments have been designed for intuitive integration, and the logic control inputs are conveniently separated to enable independent operation of each SPST channel. The package options meet JEDEC mechanical standards and are fully compliant with RoHS directives, including specialized Pb-free and high-temperature anneal options for reflow soldering processes.
Engineered for dependable field performance, the DG412DYZ-T offers broad environmental resilience. Key parameters include:
Absolute maximum ratings: Can tolerate a V+ to V– voltage difference of up to 44V, and operate continuously with supply voltages up to ±20V.
Operating temperature range: Qualified for –40°C to +85°C, supporting deployment in both commercial and industrial environments.
Storage temperature: Ranges from –65°C to +150°C, accommodating logistics and pre-assembly warehouse conditions.
The high-voltage CMOS process incorporates an epitaxial layer, specifically to mitigate latch-up phenomena historically associated with older switch designs, and delivers robust electrostatic discharge immunity. The SOIC package variant features a typical thermal resistance of 110°C/W (θJA), supporting predictable thermal management in densely packed enclosures.
The DG412DYZ-T’s architecture is highly adaptable for precision and general-purpose analog switching across multiple sectors:
Audio signal switching: Its low ON-resistance and fast switching minimize signal degradation in professional and consumer audio mixers or routing matrices.
Multiplexers in data acquisition: Bilateral switching and high signal swing capacity enable accurate sensor interfacing and A/D front-end signal conditioning.
Sample-and-hold circuits: Minimized charge injection supports acquisition integrity for high-precision analog-to-digital conversion stages.
Communication systems: Implements signal path selection, test-point routing, and filtering in telecommunications and RF systems.
Automatic Test Equipment (ATE) and Hi-Rel Systems: The device’s enhanced reliability and matched channels streamline test process automation and redundancy in mission-critical hardware.
Real-world deployment is further facilitated by robust input-tolerance (logic and analog), as well as by reduced crosstalk and favorable off-isolation characteristics validated by thorough characterization test circuits (as per original documentation).
Engineers considering the DG412DYZ-T for existing designs or legacy system upgrades may evaluate the following equivalent and replacement models:
DG211 and DG212 series (legacy models): While form-factor compatible, these devices offer higher ON-resistance and slower switching times. The DG412DYZ-T is specifically engineered as a drop-in upgrade.
DG411 and DG413 (Renesas): These quad SPST models share the same monolithic platform. The DG411 features complementary logic (logic low for ON), and the DG413 incorporates mixed logic for specialized SPDT or break-before-make/make-before-break switching schemes.
Competing high-voltage CMOS quad SPST switches available from other vendors may also be considered, but engineers should closely compare ON-resistance, supply voltage ranges, and logic interface for compatibility.
Thorough comparison of logic polarity requirements, physical pinout, and electrical ratings is recommended when substituting the DG412DYZ-T in redesigns or sourcing alternate options for long-term supply assurance.
: Strategic selection of the DG412DYZ-T for reliable analog switching
The DG412DYZ-T monolithic quad SPST CMOS analog switch stands as a robust, high-performance solution for engineers and procurement specialists seeking uncompromised signal quality, fast operation, and broad application flexibility. Its low ON-resistance, fast switch times, and wide voltage compatibility—combined with enhanced reliability against latch-up and ESD—address critical needs in high-reliability instrumentation, communications, and signal processing equipment. Careful analysis of system requirements against the DG412DYZ-T’s specifications ensures optimal performance and future-proofing in demanding analog switching applications.
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