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| Part Number: | IXTH200N10T |
|---|---|
| Manufacturer/Brand: | IXYS / Littelfuse |
| Part of Description: | MOSFET N-CH 100V 200A TO247 |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $2.51 |
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247 (IXTH) |
| Series | Trench |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
| Power Dissipation (Max) | 550W (Tc) |
| Package / Case | TO-247-3 |
| Package | Tube |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Base Product Number | IXTH200 |




The IXYS IXTH200N10T represents a high-current, high-power N-channel MOSFET, purpose-engineered for demanding industrial switching and power conversion scenarios. As a member of the IXTH series from IXYS, this device features a voltage capability of 100V and a maximum continuous current rating of 200A, suitable for circuits requiring robust performance under substantial load conditions. Housed in the TO-247 through-hole package, the IXTH200N10T is optimized for efficient heat dissipation and reliability, making it a preferred choice in designs where durability and consistent operation are critical.
A closer examination of the key characteristics of the IXYS IXTH200N10T reveals its strengths in power handling and thermal management. With a drain-to-source voltage (Vds) rating of 100V and a drain current (Id) capacity of up to 200A (when mounted on a suitable heatsink for thermal control), this MOSFET supports high-efficiency, low-loss switching typical of advanced power electronics. The device is capable of dissipating up to 550W of power at optimal thermal conditions, allowing engineers to deploy it in converters, inverters, and motor-control applications with confidence. The TO-247 package ensures secure mounting and straightforward integration into standard PCB designs, supporting a range of high-power circuit architectures where mechanical robustness is essential.
The IXYS IXTH200N10T’s TO-247 package is engineered for through-hole PCB mounting. This form factor provides several advantages for assembly and thermal performance. The package’s large footprint improves heat dissipation, and its mechanical durability ensures reliable contact in environments subject to vibration or mechanical stress. From an engineering standpoint, the choice of the TO-247 package enables designers to optimize heatsink selection and board layout for effective cooling, facilitating the MOSFET’s use in multi-device arrays for paralleling high currents or distributing thermal loads.
For applications requiring strict compliance with reliability and safety standards, the IXYS IXTH200N10T addresses these needs via several environmental ratings. The device features an unlimited Moisture Sensitivity Level (MSL 1), enhancing its suitability for standard storage and reflow soldering procedures. In the context of export and regulatory control, its ECCN designation is EAR99, and it is classified under the Harmonized Tariff Schedule numbering 8541.29.0095. These attributes streamline global deployment, procurement, and logistics, ensuring that supply chain and certification challenges are minimized for production-scale operations.
In certain engineering scenarios—such as redesigns, supply chain constraints, or upgrades—identifying viable alternates to the IXYS IXTH200N10T is crucial. Product selection engineers will find that direct equivalents should match on fundamental parameters, i.e., N-channel configuration, a voltage rating of at least 100V, and a current rating of 200A or higher, with comparable power dissipation. Models from other IXYS series or alternative brands that offer similar specifications in a TO-247 package can be considered, provided that qualification testing confirms electrical and thermal parity in the intended application.
Insights on Selecting IXYS IXTH200N10T
The IXYS IXTH200N10T MOSFET offers an efficient and reliable solution for high-power switching, with a blend of robust electrical ratings and practical packaging suitable for industrial and commercial power electronics. Its combination of high current capability, substantial heat dissipation, and adherence to regulatory standards positions it as a versatile option for engineers and procurement specialists seeking optimal device selection within its class. In high-performance designs where power density, mounting reliability, and certification are mandatory, the IXYS IXTH200N10T stands out as a component aligning with contemporary engineering criteria.
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