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| Part Number: | IRFS7530-7PPBF |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | MOSFET N-CH 60V 240A D2PAK |
| Datasheets: | None |
| RoHs Status: | Lead free / RoHs compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D2PAK (7-Lead) |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 12960 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 354 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |




The IRFS7530-7PPBF from Infineon Technologies is an advanced N-channel MOSFET optimized for high-efficiency switching tasks. Presented in a D2PAK-7 surface mount package, this device is rated for 60V drain-to-source voltage and delivers a remarkable continuous current of 240A, with a maximum power dissipation of 375W (case). As part of Infineon’s HEXFET® technology portfolio, the IRFS7530-7PPBF is designed to address the stringent requirements of modern power management systems, offering enhanced ruggedness and fully characterized switching behavior. The device is manufactured to meet RoHS standards and is suitable for lead-free environments, supporting compliance-driven designs for global markets.
Engineers and procurement specialists evaluating the IRFS7530-7PPBF will find several crucial features designed to facilitate robust and efficient system operation:
Exceptional Gate, Avalanche, and Dynamic dV/dt Ruggedness: The device is engineered to withstand demanding switching environments, tolerating momentary voltage and current surges without degrading performance.
Fully Characterized Capacitance and Avalanche Safe Operating Area (SOA): The MOSFET's capacitance values and avalanche capability are comprehensively detailed, allowing designers to precisely predict system response under abnormal conditions such as inductive switching.
Enhanced Body Diode dV/dt and di/dt Capabilities: The IRFS7530-7PPBF includes improvements to the body diode, ensuring faster and more reliable recovery, key for synchronous rectification and half-bridge applications.
Industry-compliant Package and Environmental Attributes: The D2PAK-7 package ensures compatibility with a wide range of automated assembly processes. Lead-free construction and RoHS compliance facilitate eco-friendly manufacturing and safe handling procedures.
The IRFS7530-7PPBF is optimized for demanding applications requiring high current and robust switching:
Motor Drives: Suitable for both brushed and brushless DC (BLDC) motor control, enabling efficient torque and speed management in industrial, automotive, and automation systems.
Battery Powered Circuits: The MOSFET's low on-resistance and high current capability make it ideal for high-transient, pulse-heavy environments often found in battery-powered devices.
Power Conversion Topologies: Extensive suitability for half-bridge and full-bridge architectures, as well as synchronous rectification in switch mode power supplies (SMPS) and resonant converters.
Redundant Power Path Switching: Useful for applications needing OR-ing functions and fail-safe power switching, where reliable current delivery and low losses are critical.
The technical strengths of the IRFS7530-7PPBF are underscored by its impressive electrical parameters, vital for advanced circuit design:
Maximum Drain Current: Up to 240A (case, at 25°C), supporting high load switching with minimal conduction loss.
Drain-to-Source Voltage: Rated at 60V, providing a robust safety margin for 48V and similar applications.
On-Resistance (RDS(on)): The device exhibits extremely low RDS(on), reducing I²R power losses and heat generation during conduction.
Comprehensive Avalanche Specs: Safe Operating Area (SOA) and avalanche capability are validated with specific test conditions, allowing the device to tolerate repetitive and non-repetitive energy surges without failure—crucial for inductive load switching.
Dynamic Switching Performance: Fast switching and low gate charge facilitate higher system efficiencies and compact magnetic design, with detailed characterization for gate charge and device capacitances aiding in precise driver circuit selection.
The IRFS7530-7PPBF is supplied in the robust D2PAK-7 (TO-263CB JEDEC outline), popular for surface-mount power semiconductors. The package is optimized for low thermal resistance (junction-to-case), ensuring efficient heat extraction and simplified PCB design, even in high-current or dense layouts:
Maximum Power Dissipation: 375W (case) enables substantial power handling headroom for high-duty-cycle or burst-mode operation.
Effective Transient Thermal Impedance: Detailed characterization allows engineers to account for short-term power surges.
PCB Mounting and Footprint: The 7-pin package provides multiple parallel source connections, reducing parasitics and improving current sharing, which is advantageous for high-current traces or multi-device parallel operation.
RoHS and lead-free compliance make the package compatible with modern assembly and environmental requirements.
Selecting a suitable equivalent or replacement for the IRFS7530-7PPBF hinges on matching key electrical parameters and ruggedness characteristics. For system-critical designs, close attention must be paid to on-resistance, maximum current, SOA, and package compatibility.
While the IRFS7530-7PPBF’s combination of high current capability, robust avalanche handling, and enhanced body diode characteristics is distinctive, alternatives from other HEXFET®-based product lines or similar industry-standard D2PAK N-channel MOSFETs rated for 60V/240A may be considered. It's crucial that any replacement offers validated avalanche SOA, gate charge, and packaging characteristics, along with full RoHS/lead-free compliance.
When specifying an equivalent, engineers should also review Infineon's portfolio for other HEXFET® N-channel MOSFETs with similar or enhanced electrical characteristics as potential replacements.
The IRFS7530-7PPBF from Infineon Technologies stands out as a high-performance N-channel MOSFET tailored for modern power switching and motor control scenarios. Its blend of advanced ruggedness, low on-resistance, detailed SOA characterization, and a thermally-efficient D2PAK-7 package makes it a strong candidate for demanding applications in industrial, automotive, and power conversion fields. For engineers conducting product selection or procurement, the IRFS7530-7PPBF offers not only reliable switching and conduction performance but also the environmental and compliance credentials required for next-generation designs. When evaluating alternatives, careful comparison of ruggedness, package, and electrical attributes is essential to maintain circuit performance and system reliability.
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