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| Part Number: | IRFS7437PBF |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | MOSFET N CH 40V 195A D2PAK |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3 |
| Series | HEXFET®, StrongIRFET™ |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| Power Dissipation (Max) | 230W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |




The IRFS7437PBF by Infineon Technologies is a robust N-channel power MOSFET specifically optimized for applications involving high current and moderate voltage requirements. Packaged in the space-efficient D²PAK (TO-263AB) surface mount format, the IRFS7437PBF combines the benefits of low on-resistance, high current handling (up to 195A), and excellent thermal performance. Its combination of a 40V drain-to-source voltage and 230W maximum power dissipation makes it highly suitable for demanding power conversion and motor drive scenarios, ensuring engineering flexibility and design robustness in today’s high-performance systems.
The IRFS7437PBF delivers several advanced features and tangible benefits to engineers targeting performance, efficiency, and ruggedness:
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness: Provides enhanced reliability during switching transients and abnormal conditions.
Fully Characterized Capacitance and Safe Operating Area (SOA): Ensures predictable design-in behavior, critical for power electronics and motor drive designers.
Enhanced Body Diode Performance: Advanced dV/dt and dI/dt capability for smooth and efficient synchronous rectification and inverter operation.
Lead-Free and Halogen-Free Construction: Facilitates compliance with stringent environmental regulations, supporting sustainable product strategies.
By leveraging Infineon’s established HEXFET® process, the IRFS7437PBF achieves low R_DS(on) for reduced conduction losses and superior efficiency even under substantial thermal and electrical stress.
Evaluating the IRFS7437PBF from a technical standpoint, several parameters stand out:
Maximum Current Handling: Up to 195A (case temperature limited), enabling use in high-power circuits with confidence regarding bond wire and case limits.
Power Dissipation: Rated at 230W (case temperature), delivering headroom for aggressive power management designs.
Switching Behavior: The device exhibits stable operation with well-characterized gate charge and output capacitance, easing the task of gate drive and timing optimization in fast-switching environments.
Avalanche and Safe Operating Area: Comprehensive avalanche energy ratings and SOA characterization support use in circuits prone to inductive load switching, minimizing risk of device failure during abnormal events.
Thermal management must be carefully considered in application, as with any high-current MOSFET. The IRFS7437PBF provides designers with multiple thermal impedance curves and characterization data to guide heat sinking and PCB layout decisions.
The IRFS7437PBF targets a diverse set of power electronics requirements, including but not limited to:
Brushed and Brushless DC (BLDC) Motor Drives: Ideal for both full-bridge and half-bridge topologies in automotive and industrial motion control.
Battery-Powered Circuits: Enables high-efficiency load switching and power path management.
Power Conversion: Well-suited to synchronous rectification in DC/DC and AC/DC converters, as well as for use in resonant and hard-switching power supplies.
Switches in Redundant/OR-ing Power Architectures: Offers low voltage drop and fast switching for high-availability power distribution.
DC/AC Inverters: Supports solar, UPS, and industrial inverter systems with reliable performance under variable loads and switching stress.
These applications benefit from the IRFS7437PBF’s strong avalanche endurance and rapid switching, contributing to efficient, reliable, and robust system operation.
The IRFS7437PBF is supplied in the industry-standard D²PAK (TO-263AB) surface mount package, offering:
Mechanical Compliance: Conforms to JEDEC TO-263AB outline, ensuring compatibility with automated assembly and existing board layouts.
Lead Assignments: Clear pin configuration for gate, drain, and source simplifies PCB routing and system integration.
Robust Dimensions and Marking: Backed by ASME Y14.5M-1994 dimensioning standards, with available tape and reel options for high-volume production.
Careful consideration of the package’s thermal path and solder footprint is recommended to optimize current distribution and heat dissipation in demanding applications.
Infineon Technologies provides the IRFS7437PBF qualified according to rigorous JEDEC industry standards, ensuring:
Consistent Reliability: Testing and qualification across temperature and operating ranges for robust lifetime performance.
Documentation and Traceability: Reference to the latest package and reliability data allows design teams to match component performance to application risk requirements.
For mission-critical environments or custom qualification needs, Infineon can provide additional reliability data upon request, supporting informed risk mitigation by engineering teams.
When selecting a drop-in replacement or alternative for the IRFS7437PBF, engineers should focus on key parameters such as voltage rating, current capability, R_DS(on), thermal resistance, and package compatibility. Close inspection of Infineon Technologies’ HEXFET® series and similar devices from the IRFSL7437PbF family may yield suitable matches, with attention to variations in pinout and performance at temperature.
Comparable MOSFETs from other established vendors may also serve as potential equivalents, but always confirm alignment of critical electrical and mechanical specifications, especially with regard to power cycling, SOA, and avalanche energy ratings. Consult product datasheets and, when necessary, request application support to ensure seamless substitution with minimal re-qualification effort.
: Strategic Selection of the IRFS7437PBF in Modern Systems
The IRFS7437PBF from Infineon Technologies stands out as a technically versatile and rugged N-channel power MOSFET designed for today’s demanding power control and conversion applications. Combining high current handling, advanced ruggedness features, and an accessible surface mount package, it gives engineers and procurement specialists a reliable and efficient solution for a broad range of high-performance designs. When selecting the IRFS7437PBF, careful assessment of application-specific operating conditions, package integration, and potential drop-in equivalents ensures ongoing project success and optimal system reliability.
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