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| Part Number: | IR1166SPBF |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | IC GATE DRVR LOW-SIDE 8SOIC |
| Datasheets: |
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| RoHs Status: | Lead free / RoHs compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.9127 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Supply | 11.4V ~ 18V |
| Supplier Device Package | 8-SOIC |
| Series | SmartRectifier™ |
| Rise / Fall Time (Typ) | 21ns, 10ns |
| Package / Case | 8-SOIC (0.154', 3.90mm Width) |
| Package | Tube |
| Operating Temperature | -25°C ~ 125°C (TJ) |
| Number of Drivers | 1 |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Logic Voltage - VIL, VIH | 2V, 2.15V |
| Input Type | Non-Inverting |
| Gate Type | N-Channel MOSFET |
| Driven Configuration | Low-Side |
| Current - Peak Output (Source, Sink) | 1A, 4A |
| Channel Type | Single |
| Base Product Number | IR1166 |




The IR1166SPBF from Infineon Technologies is a secondary-side, high-speed synchronous rectifier (SR) controller IC, specifically designed for use in isolated Flyback converter topologies. Housed in an 8-lead SOIC package, this device directly senses the drain voltage of N-channel power MOSFETs, enabling efficient and reliable operation of modern switch-mode power supplies (SMPS). By replacing traditional discrete diode rectification, the IR1166SPBF offers significant improvements in power efficiency and heat management, especially critical to power electronics in energy-conscious applications.
The IR1166SPBF integrates a suite of advanced functionalities tailored for robust gate drive and precise SR control:
Support for DCM (Discontinuous Conduction Mode), CrCM (Critical Conduction Mode), and CCM (Continuous Conduction Mode) Flyback converters, maximizing its versatility across a wide range of power supply architectures.
Built on proprietary 200V IC technology with a maximum switching frequency of 500 kHz, enhancing performance in both fixedand variable-frequency environments.
High driving capability with a 4A peak turn-off drive current and gate drive output clamped at 10.7V for safe, reliable MOSFET control.
Fast turn-off propagation delay (50ns typ.), reducing the risk of cross-conduction and enabling superior efficiency, particularly in high-frequency designs.
Ultra-low quiescent (standby) current, micropower startup circuitry, and comprehensive protection including undervoltage lockout (UVLO) and anti-bounce logic for greater system reliability.
Programmable minimum on-time (MOT) and input offset voltage trimming via dedicated pins, fine-tuning turn-on/off thresholds to accommodate various MOSFET types and gate drive requirements.
Minimal required external components and simple design flow reduce BOM cost and PCB footprint.
RoHS-compliant (lead-free) packaging, supporting international energy and environmental standards such as ENERGY STAR, CECP, and compliance with 1W standby architectures.
The IR1166SPBF is engineered for secondary-side synchronous rectification in high-efficiency switch-mode power supplies. Its core application areas include:
LCD and PDP TV power supplies, where efficiency and heat management are critical.
Telecom SMPS and server adapters, which require reliable, high-frequency operation under strict regulatory efficiency standards.
Notebook ATX SMPS and AC-DC adapters, benefiting from reduced standby power consumption and improved thermal performance.
This smart rectifier control IC operates by emulating diode rectification with one or more parallel N-channel MOSFETs. The IR1166SPBF's input comparator senses drain-source voltage polarity, using the MOSFET’s inherent RDS(on) as a shunt resistor to determine turn-on and turn-off points with high precision. Upon detecting negative VDS (secondary conduction phase), the IC asserts the gate drive to the SR MOSFET, ensuring efficient conduction with minimal voltage drop. Advanced blanking and double-pulse suppression schemes safeguard against spurious transitions caused by oscillations or high di/dt events, ensuring reliable function in CCM, DCM, and CrCM modes.
In DCM/CrCM, the device maintains conduction until VDS crosses a preset threshold (VTH1), then incorporates blanking periods to suppress false triggers and synchronize with zero-current conditions. In CCM, the IR1166SPBF’s rapid turn-off minimizes cross-conduction with the primary-side FET, reducing overall switching losses.
The IR1166SPBF is specified for supply voltages from 11.3V to 20V, with all device operation referenced to ground. It features robust protection against latch-up, ESD, and overvoltage, ensuring resistance to harsh environmental or load conditions. Electrical parameters such as propagation delay, MOT, comparator thresholds, and supply currents are characterized over the -25°C to +125°C junction temperature range, enabling designers to predict system behavior under varied loads and ambient conditions. Comprehensive performance curves (including supply current vs. Vcc, UVLO thresholds vs. temperature, and comparator hysteresis) are provided to facilitate informed design decisions.
The 8-lead SOIC package is comprised of the following primary pins:
VCC: Power supply input, internally monitored for UVLO and clamp protection.
GND: IC reference ground.
GATE: Low-side gate drive output, capable of directly driving the SR MOSFET gate (with recommendation for a minimal gate resistor).
VD/VS: Differential sense inputs for MOSFET drain and source, enabling direct VDS sensing for optimal timing.
EN: Enable input (active low), supporting system sleep mode with minimized supply current drain.
OVT: Offset Voltage Trimming, allowing designers to adjust the turn-off threshold for different MOSFET types.
MOT: Minimum On Time programming, adjustable via an external resistor for application-specific timing.
Proper PCB layout is crucial: VS must connect as a Kelvin sense to the MOSFET source (not directly to power ground), and VCC should be bypassed with a ceramic capacitor placed as close as possible to the pin. Minimizing gate and sense line lengths further reduces parasitic inductance and optimizes high-speed operation.
Several key aspects should be considered for successful integration of the IR1166SPBF:
Selection of MOSFET: Thresholds and MOT timing should be programmed to match the chosen SR FET’s RDS(on) and thermal profile.
Operation Mode: The controller’s blanking and comparator logic ensure robust function across CCM, DCM, and CrCM; nevertheless, primary/secondary coordination and MOT configuration should be validated for each topology.
Gate Drive Layout: Keeping the gate drive loop compact is critical for minimizing EMI and improving switching performance, especially at higher frequencies.
Protection Features: Utilize the UVLO and enable (EN) functions for safe system startup and power-down, supporting adaptive sleep modes essential for meeting aggressive standby power targets.
Power Dissipation: Understanding the thermal and electrical limits—such as maximum VCC under switching frequencies and heat dissipation from both FET and controller—ensures long-term system reliability.
While the IR1166SPBF delivers a unique feature set well-suited for high-efficiency Flyback converter SR applications, procurement and design engineers may consider alternative synchronous rectifier controllers from Infineon Technologies or other reputable manufacturers. Comparable products should match in terms of topology compatibility (Flyback DCM/CCM/CrCM), SOIC-8 packaging, maximum voltage/frequency ratings, and programmable minimum on-time/threshold features. Always verify parameter alignment and qualification specifics for direct pin-compatible replacements.
The IR1166SPBF is supplied in the JEDEC-compliant SOIC-8N plastic package, conforming to outline MS-012AA. It features a standard footprint for automated pick-and-place and reflow soldering processes. All dimensions and tolerances meet industry standards, enabling seamless integration into compact PCBs typical of modern power supply layouts.
The Infineon Technologies IR1166SPBF sets a benchmark for smart rectification in modern low-side gate drive applications. Its combination of advanced blanking logic, low power consumption, and robust switching performance makes it a preferred choice for engineers seeking high efficiency, reliability, and design simplicity in secondary-side Flyback power supply designs. By understanding the device’s detailed operation, features, and implementation nuances, product selection engineers and procurement professionals can confidently specify the IR1166SPBF for both new and retrofit SMPS designs.
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