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| Part Number: | S25FS128SAGBHM200 |
|---|---|
| Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
| Part of Description: | IC FLASH 128MBIT SPI/QUAD 24BGA |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $1.9186 |
| 338+ | $0.7422 |
| 676+ | $0.7175 |
| 1014+ | $0.7044 |
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| Product Attribute | Attribute Value |
|---|---|
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 2V |
| Technology | FLASH - NOR |
| Supplier Device Package | 24-BGA (8x6) |
| Series | Automotive, AEC-Q100, FS-S |
| Package / Case | 24-TBGA |
| Package | Tray |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Memory Type | Non-Volatile |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8 |
| Memory Interface | SPI - Quad I/O, QPI |
| Memory Format | FLASH |
| Clock Frequency | 133 MHz |
| Base Product Number | S25FS128 |




The Cypress S25FS128SAGBHM200 is a member of the S25FS-S family of high-density NOR flash memory solutions, designed for applications requiring reliable non-volatile storage with flexible interfacing and robust security. Targeting embedded, industrial, and automotive systems, the S25FS128SAGBHM200 offers a 128Mbit (16MB) flash array utilizing advanced 65-nm MIRRORBIT™ process and Eclipse architecture for fast program and erase operations. Operable at a single 1.8V supply voltage and available in space-efficient 24-ball BGA packages (among others), it supports a range of temperature grades suitable for both standard industrial and demanding automotive scenarios.
The S25FS128SAGBHM200 stands out for its combination of density, speed, and flexibility. It provides up to 128Mbit of storage, accessible via a high-speed SPI or Quad Peripheral Interface running at up to 133MHz in single data rate (SDR) mode, and 80MHz in double data rate (DDR) mode. The device implements configurable program buffer sizes (up to 512 bytes) and advanced hybrid sector architectures, enabling both legacy uniform sectors and specialized parameter sectors for flexible erase options. Endurance is rated at a minimum of 100,000 program/erase cycles per sector, with guaranteed data retention for at least 20 years. Built-in ECC offers hardware-level detection and correction of single-bit errors to enhance reliability in critical applications.
To optimize board space and simplify layout, the S25FS128SAGBHM200 utilizes a multi-I/O SPI interface supporting single (SIO), dual (DIO), quad (QIO), and QPI command sets. The SPI-MIO approach minimizes required signal count by transferring control, addresses, and data serially over just 4–6 pins. Continuous read, burst wrap, and execute-in-place (XIP) capabilities are enabled by high-speed multi-bit transfers, making the device suitable for direct code execution from flash—a frequent requirement in modern embedded and automotive designs. QPI mode allows all transfers (instructions, addresses, data) over four pins for maximal throughput.
Versatility in physical integration is a hallmark of the S25FS128SAGBHM200, with offerings in various BGA, SOIC, and WSON packages suited to PCB constraints. The 24-ball BGA format, for instance, offers footprints compatible with both FAB024 (5 × 5 ball) and FAC024 (4 × 6 ball) variants, aiding board-level reuse or migration. Each signal pin supports roles in the multiple I/O modes, including support for dedicated write protection and reset functions. The IO3 pin doubles as hardware reset and data I/O in Quad modes, ensuring robust system-level recovery capabilities even in complex multi-device designs.
The S25FS128SAGBHM200 is engineered for operation within 1.7V to 2.0V supply ranges, with tight envelope for both logic and I/O levels. Operating temperatures span from -40°C up to +125°C for certain automotive grades (AEC-Q100), addressing reliability in harsh environments. During power-up and power-down, critical timing constraints must be observed (such as CS# tracking VCC transitions) to avoid unintended writes or corruption. The device maintains multiple power modes—active, standby, and deep power-down (DPD)—providing flexible options for energy-sensitive designs. Detailed timing parameters (setup/hold, output valid windows) are available, including considerations for high-frequency DDR operation and output impedance adjustment via configuration registers.
Address space management is a prominent strength: while legacy 24-bit addressing is supported (up to 128Mbit), the S25FS128SAGBHM200 allows migration to 32-bit addressing (4-byte) for future scalability or code portability. Sector mapping can be dynamically configured as hybrid (with dedicated parameter sectors at top or bottom) or uniform, further aligning with software and memory management requirements across evolving product lines. Sector sizes are selectable as 4KB, 64KB, or 256KB blocks, and sector mapping options are preserved through dedicated configuration register bits.
Built on a foundation of flexible configuration, the S25FS128SAGBHM200 provides a suite of volatile and non-volatile registers accessible via specific SPI commands. These registers control sector mapping, operation modes, protection boundaries, burst lengths, quad/DDR activation, and output impedance among others. Security and data integrity are reinforced through block protection bits (BP), advanced sector protection bits (ASP), persistent protection bits (PPB), dynamic protection bits (DYB), and write-protect hardware mechanisms. Device freeze options lock configuration against runtime tampering, and secure OTP storage ensures mission-critical data (such as unique serials or security seeds) is reliably protected.
The S25FS128SAGBHM200 implements an extensive command library supporting legacy SPI devices as well as advanced features required for code execution and frequent data updates. Read commands are available in normal, fast, dual, quad, and DDR variants, with variable latency for interface optimization. Page program and erase commands support fine-grained or bulk memory management, including suspension/resumption, erase status evaluation, and parameter sector handling. Special attention is given to protection and reset commands, deep power-down modes, and continuous read cycles, all aimed at enabling robust, interruption-tolerant embedded operation.
Security in embedded flash storage is increasingly crucial, and the S25FS128SAGBHM200 addresses this through multi-layered protection. One-time programmable (OTP) memory regions enable unique device binding to host ASIC/CPU. Block and advanced sector protection schemes, configured via password or persistent protection modes, prevent unauthorized program/erase operations. An ASP register and password register can be permanently set, locking critical sector access. The device supports password-protected unlocks, sector-specific protection, and system boot-controlled lock/unlock cycles. Freeze bits and lockable regions further reduce the risk of malicious or accidental reconfiguration.
Migrating designs to the S25FS128SAGBHM200 allows engineers to leverage command/footprint compatibility with previous Cypress FL-A, FL-K, FL-P, and FL-S SPI families while offering lower supply voltage and enhanced performance. Engineers should note key migration differences: fully integrated multi-I/O operations, new error reporting standards, secure silicon regions with restructured OTP protection, and configuration freeze enhancements. Deep Power-Down and high-speed DDR operations may demand careful PCB layout and host controller adaptation. Support for various sector erase sizes, power modes, and register configuration options enables tailored system designs ranging from ultra-low-power IoT devices to high-throughput automotive ECUs.
Depending on required density, supply voltage, and interface options, engineers may consider the larger S25FS256S (256Mb/32MB) device within the same family for expanded storage, which shares identical architectural features and configuration logic. For legacy compatibility, Cypress FL-S, FL-K, or FL-P series SPI NOR flashes are alternatives, especially where 3V operation is required. Equivalent models from other vendors can be sought if software compatibility with SFDP or CFI standards is necessary; however, system designers are encouraged to verify command subset, protection features, and erase/program algorithms for direct replacement. Due diligence on migration for timing, program/erase endurance, and data retention is essential when evaluating cross-manufacturer equivalency.
: Selecting the S25FS128SAGBHM200 for Your Design
The Cypress S25FS128SAGBHM200 delivers a high-performance, highly configurable flash memory platform for modern embedded, industrial, and automotive applications. Its robust multi-I/O SPI interface, extensive security architecture, scalable addressing, and advanced sector protection make it a leading candidate for systems where code execute-in-place, data retention, and flexible protection are required. Offering backward compatibility with legacy SPI flash devices and future-proofing for higher densities and faster operation, the S25FS128SAGBHM200 stands out for its efficiency and versatility. Thorough attention to configuration registers, migration nuances, and operational limits will ensure optimal integration and reliability in production designs.
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