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| Part Number: | DS1314S-2+ |
|---|---|
| Manufacturer/Brand: | Analog Devices Inc./Maxim Integrated |
| Part of Description: | IC CTRLR NV W/BATT MON 3V 8-SOIC |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $4.3774 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Supply | 3V ~ 3.6V |
| Supplier Device Package | 8-SOIC |
| Series | - |
| Package / Case | 8-SOIC (0.154', 3.90mm Width) |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
| Controller Type | Nonvolatile RAM |
| Base Product Number | DS1314 |




The DS1314S-2+ series, developed by Analog Devices Inc./Maxim Integrated, is a purpose-built CMOS controller designed to convert standard CMOS SRAM devices into reliable nonvolatile memory systems. By integrating battery monitoring, power-fail detection, and automatic switching between primary power and battery backup, the DS1314S-2+ series addresses crucial challenges in protecting volatile memory content during power loss. Applications in industrial controls, data-logging systems, embedded processors, and critical infrastructure benefit from its robust backup and monitoring features. The device supports a supply voltage range of 3.0V to 3.3V and operates reliably across the industrial temperature spectrum from -40°C to +85°C. Engineers and procurement professionals considering high-value data integrity solutions will find the DS1314S-2+ ideally positioned for demanding environments.
The DS1314S-2+ nonvolatile controller delivers multifaceted functionality for integrating battery-backed SRAM in electronic systems. Its primary role is to switch power seamlessly between system supply (Vcc1) and a backup lithium battery (VBAT), ensuring continuous SRAM operation during power interruptions. A precision comparator monitors incoming power, and when an out-of-tolerance event is detected, the chip enable output (CEO) is inhibited, providing guaranteed write protection for the memory device. Critical timing logic ensures that any memory operation in progress at the moment of power loss is completed, avoiding data corruption. The controller supports two power-fail detection thresholds, selected via the TOL pin: 3.0V (for 3.3V supply) or 2.7V (for 3.0V supply). The switching architecture minimizes voltage drop (<0.2V) between power sources for optimal data retention. These features collectively enable engineers to enhance the reliability of standard RAM chips, providing the robustness of nonvolatile memory at a system level.
The DS1314S-2+ family offers versatile package choices to fit diverse board layouts and mechanical constraints. Available in space-saving 8-pin SOIC and DIP formats—plus optional 16-pin SOIC and 20-pin TSSOP variants—the series accommodates both surface-mount and through-hole applications. Measurement widths include 150 mils and 300 mils for standardization in existing designs. Environmental and regulatory compliance is ensured, with DS1314S-2+ meeting RoHS3 standards and unaffected by REACH regulations, making it suitable for global deployment. The device is rated with a moisture sensitivity level (MSL) of 1, signifying unlimited shelf life in storage, and complies with industrial thermal and storage requirements for reliability in harsh conditions.
Engineering evaluation of the DS1314S-2+ centers on stringent electrical specifications. Supply voltage ranges are set at 3.0–3.6V (TOL=GND) or 2.7–3.3V (TOL=Vcco), providing flexibility for 3.0V or 3.3V system designs. Its ultra-low operating current requirements (50–200μA for TTL inputs; 30–100μA for CMOS) reduce power budget concerns, while battery backup current is exceptionally minimal at 100nA, preserving battery longevity. RAM supply current remains below 80–140mA, consistent with memory protection tasks. Precision voltage trip points and battery switch-over thresholds are tightly controlled, and input/output leakage parameters ensure minimal data risk. Timing diagrams, propagation delays (typically 12–20ns for chip enable), battery test intervals (24-hour cycles), and reset pulse width (200ms) are engineered for predictable behavior in complex systems. Thermal management is facilitated by published junction-to-ambient and junction-to-case resistances across package types. These specifications empower engineers to match DS1314S-2+ capabilities to mission-critical design needs.
The DS1314S-2+ advances maintenance and reliability protocols by integrating a dedicated battery monitor function. Unlike conventional open-circuit voltage measurement—which fails to accurately signal lithium battery depletion—the DS1314S-2+ implements a periodic, loaded voltage test using a factory-programmed interval (24 hours) and an internal 1.2MΩ resistive load. If the battery voltage under load drops below a predefined threshold, the Battery Warning (BW) output is asserted, proactively advising replacement before end-of-life. This system ensures advanced warning and enables scheduled battery maintenance practices in the field. The BW signal is open-drain, suitable for straightforward monitoring. Post-replacement testing mechanics and timing constraints (minimum detachment and re-attachment intervals) safeguard the integrity of battery replacement events. Importantly, regular system power-ups are necessary to maintain effective battery monitoring, especially in installations subject to extended shutdowns. Engineers should integrate the BW output with diagnostic tools or system checks—checksum or alternative data integrity verification—whenever battery change events occur, ensuring comprehensive protection of memory content.
Select DS1314S-2+ variants, including DS1314S and DS1314E, feature an additional Reset (RST) pin to facilitate processor system management. During supply voltage drops below the TOL-defined threshold, the built-in comparator activates RST, initiating a system reset sequence. This mechanism provides not only immediate outage response but also power-on reset during system activation, with a default hold of 200ms to filter transients and allow stabilization. The open-drain architecture of RST enables interfacing with various microcontroller and processor platforms. These functions are invaluable in scenarios where system uptime and safe state transitions are critical, such as industrial automation, remote instrumentation, and embedded systems with strict state requirements.
A notable feature for OEMs and contract manufacturers is the DS1314S-2+ Freshness Seal Mode. When a battery is attached during assembly but no Vcc power is applied, the device does not immediately enable battery backup. Battery energy is thus conserved during storage and transport, only activating backup protection once Vcc is first applied and subsequently lost in-system. This feature addresses concerns of premature battery depletion during pre-installation handling, extending the useful life of backup cells and simplifying logistics for procurement and manufacturing teams. Engineers designing for long product warehousing or phased commissioning will benefit from this additional protection layer.
In sourcing or cross-referencing tasks, identifying technical equivalents or replacements for the DS1314S-2+ is essential. The direct DS1314 series comprises controllers sharing functional and electrical features with the DS1314S-2+—including battery monitoring, voltage switching, and write-protection logic. Engineers may also consider other battery-backed SRAM controllers from Analog Devices Inc./Maxim Integrated, ensuring compatibility in pinout, voltage thresholds, and package types for seamless drop-in replacement. For systems with unique package constraints or additional control lines, 16-pin SOIC or 20-pin TSSOP variants within the DS1314 family offer expanded options. It is recommended to evaluate equivalent devices for parity in electrical and operational parameters, as well as compliance credentials, particularly for safety-critical and export-restricted applications.
The DS1314S-2+ series from Analog Devices Inc./Maxim Integrated presents a high-integrity solution for converting standard CMOS SRAM into nonvolatile memory, integrating intelligent battery monitoring, precise power-fail detection, and versatile packaging. Its ability to safeguard data, provide preemptive battery replacement signals, and support both manufacturing and real-world deployment scenarios make it a compelling choice for engineers and procurement professionals focused on data integrity and operational reliability. Understanding its feature set, electrical performance, and compatible variants enables informed decision-making for system design and lifecycle management in industrial, embedded, and instrumentation environments.
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DS1314S-2+Analog Devices Inc./Maxim Integrated |
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