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| Part Number: | AOTF20C60 |
|---|---|
| Manufacturer/Brand: | Alpha and Omega Semiconductor, Inc. |
| Part of Description: | MOSFET N-CH 600V 20A TO220-3F |
| Datasheets: |
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| RoHs Status: | Lead free / RoHs compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
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| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220F |
| Series | - |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Package | Tube |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Base Product Number | AOTF20 |




The Alpha & Omega Semiconductor AOTF20C60 is a high-voltage, high-current N-Channel MOSFET designed for robust performance in demanding power electronics applications. Delivering a drain-source voltage rating of 600V and supporting a continuous drain current of up to 20A (at case temperature), the AOTF20C60 is housed in the widely adopted TO-220F through-hole package. These parameters position the AOTF20C60 as a reliable switch for engineers requiring solid-state solutions in motor drives, industrial power supplies, and similar circuits operating in consumer and general-purpose markets.
The AOTF20C60 boasts electrical parameters centered on efficiency and stability. With a maximum allowable junction temperature of 150°C, its drain current capability is balanced against thermal limits, a crucial factor for high-reliability applications. The device offers a maximum power dissipation of 50W when measured using junction-to-case thermal resistance—a key metric for systems employing additional heatsinking.
Electrical performance profiles provided at 25°C ambient detail on-region characteristics as well as dependencies on gate voltage and junction temperature. Gate charge, capacitance, and breakdown behaviors are also characterized, facilitating in-depth simulation and design-in for low-loss switching operations. Importantly, SOA (Safe Operating Area) curves demonstrate transient and steady-state limits under single-pulse and repetitive pulsed conditions, which are essential for evaluating short-circuit and inductive load scenarios.
Engineers benefit from the AOTF20C60’s practical TO-220F package, ideal for through-hole mounting and effective thermal management when paired with a heatsink. The package provides ease of installation and solid mechanical stability, enabling straightforward integration into power boards and chassis. Its construction supports direct junction-to-case thermal paths, optimizing heat dissipation and helping maintain operational integrity under continual high-current switching.
The performance attributes of the AOTF20C60 extend beyond static ratings into dynamic switching and recovery. Gate-charge and resistive/capacitive switching waveforms are defined for rapid on/off cycling, delivering low conduction losses and minimized switching times—benefits for high-frequency power conversion. Capacitance curves (including Coss and energy storage metrics) inform parallel design, timing analysis, and energy handling capacity. The body-diode recovery and unclamped inductive switching characteristics are specified to ensure sturdy behavior against voltage and current transients, supporting robust circuit protection and reliability.
When selecting the AOTF20C60, engineers must account for its suitability strictly for consumer and general-purpose markets; the device is not qualified for critical life-support applications. Design logic should consider the pulse width limits, duty cycles, and validates thermal management strategies using junction-to-case and junction-to-ambient impedance values. For the most accurate derating and reliability analysis, one should always reference SOA curves obtained with recommended pulse testing setups and maximum junction temperature specifications. Additionally, the device’s direct compatibility with large heatsinks helps achieve maximum rated power dissipation—a key consideration for sustained or high-power operation.
For designers evaluating alternatives to the Alpha & Omega Semiconductor AOTF20C60, the AOT20C60 and AOB20C60 models within the same series can be considered, each offering similar voltage and current capabilities but potentially differing in packaging and mounting options. Selection engineers should compare pinout, thermal resistance, and detailed switching characteristics across these options to ensure compatibility and optimal performance for their specific application requirements.
: Engineering Value of Alpha & Omega Semiconductor AOTF20C60 MOSFET
The Alpha & Omega Semiconductor AOTF20C60 600V N-Channel MOSFET stands out as a versatile, thermally robust component well-suited to a range of consumer and industrial power applications. Its combination of high-voltage capability, substantial current handling, and efficient TO-220F packaging provides engineers with a dependable solution for switching circuits where thermal management and high-frequency operation are mission-critical. Careful consideration of the electrical and thermal characteristics, along with a review of equivalent models, ensures optimal device selection for new and legacy designs alike.
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AOTF20C60Alpha & Omega Semiconductor Inc. |
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