English
| Part Number: | NSVBAS21TMR6T1G |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor/onsemi |
| Part of Description: | DIODE ARRAY GP 250V 200MA SC74 |
| Datasheets: |
|
| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 5+ | $0.1148 |
| 50+ | $0.0926 |
| 150+ | $0.0814 |
| 500+ | $0.0731 |
| 3000+ | $0.0636 |
| 6000+ | $0.0603 |
Online RFQ submissions: Fast responses, Better prices!
| Product Attribute | Attribute Value |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 200 mA |
| Voltage - DC Reverse (Vr) (Max) | 250 V |
| Technology | Standard |
| Supplier Device Package | SC-74 |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Series | - |
| Reverse Recovery Time (trr) | 50 ns |
| Package / Case | SC-74, SOT-457 |
| Product Attribute | Attribute Value |
|---|---|
| Package | Tape & Reel (TR) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Surface Mount |
| Diode Configuration | 3 Independent |
| Current - Reverse Leakage @ Vr | 100 nA @ 200 V |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Base Product Number | NSVBAS21 |




The onsemi NSVBAS21TMR6T1G is a high-voltage, low-current switching diode array housed in the compact SC-74 (SOT-457) surface-mount package. Integrating three independent diodes rated at 250 V, 200 mA (DC) each, the NSVBAS21TMR6T1G addresses the increasing demand for space-saving, reliable solutions in modern electronic systems. The device specifically targets designers facing stringent board space limitations who require high voltage handling and robust switching performance for signal processing, protection, and general-purpose switching tasks.
The NSVBAS21TMR6T1G is particularly well-suited to low-power surface-mount applications where component density and miniature footprints are critical. This includes, but is not limited to, signal routing for communication modules, general-purpose switching in portable and automotive electronics, and supplementary high-voltage diodes in test, measurement, or industrial control systems. It is also advantageous in designs where multiple signal paths require independent switching elements but PCB real estate must be conserved.
Engineers evaluating the NSVBAS21TMR6T1G will find the following features notable:
Integration of three independent switching diodes into a single SC-74 package, significantly reducing board space requirements compared to discrete implementations.
Rated for operation up to 250 V and 200 mA (DC) per diode, supporting robust signal switching in high-voltage environments.
Automotive applicability indicated by the NSV prefix, AEC-Q101 qualification, and PPAP (Production Part Approval Process) capability, ensuring reliability under automotive or demanding industrial standards.
Compliance with key environmental standards: the device is Pb-Free, halogen/BFR-free, and fully RoHS compliant, supporting sustainable and globally accepted manufacturing practices.
At the ambient temperature of 25°C, the NSVBAS21TMR6T1G offers stable electrical operation, with parametric performance outlined in its datasheet to enable accurate design-in calculations. The device features low leakage current, fast switching recovery, and predictable forward voltage characteristics essential for reliable signal routing in high-speed or sensitive circuits. The datasheet also specifies the equivalent test circuitry for recovery time and characterizes typical junction capacitance, further supporting high-frequency and low-loss switching applications.
The NSVBAS21TMR6T1G is built in the SC-74 (SOT-457) package, corresponding to the JEDEC CASE 318F standard. Mechanical dimensional compliance is ensured through ASME Y14.5M-1994, and the small outline form factor enables high-density component layouts on multilayer PCBs. The device features Pb-free terminations and a generic soldering footprint, maximizing manufacturing flexibility. Detailed package dimension information and lead configurations enable straightforward integration with automated pick-and-place assembly lines and standard SMT reflow protocols.
The NSVBAS21TMR6T1G meets stringent environmental requirements by being RoHS compliant and free from lead (Pb), halogens, and brominated flame retardants (BFR). These attributes ensure global market acceptance and facilitate certification efforts for end-products targeting eco-friendly, sustainable applications. Furthermore, AEC-Q101 qualification and PPAP support make the device an ideal candidate for deployment in automotive systems with demanding long-term reliability and traceability requirements.
When considering the NSVBAS21TMR6T1G for new or existing designs, it is essential to evaluate potential equivalent or replacement models for supply chain flexibility and risk mitigation. The NSVBAS21TMR6T1G is closely related to the BAS21TMR6 series diodes from onsemi, offering similar voltage/current ratings and package configurations. Engineers should verify that any replacement candidate matches or exceeds the electrical, thermal, mechanical, and regulatory parameters of the NSVBAS21TMR6T1G to ensure compatibility and preserve system integrity.
: Selection guidance and engineering considerations for NSVBAS21TMR6T1G
The onsemi NSVBAS21TMR6T1G diode array presents a highly adaptable and space-efficient solution for high-voltage, general-purpose switching applications in compact electronic assemblies. Its trio of independent diodes, high voltage capability, compliance with automotive standards, and sustainable manufacturing credentials make it a preferred choice for product selection engineers requiring a robust blend of reliability, integration, and board space optimization. Engineers are encouraged to assess thermal design, assembly constraints, and supply chain strategies when integrating the NSVBAS21TMR6T1G, leveraging its combination of features to enable innovation in densely packed PCBs across industrial, consumer, and automotive sectors.
DIODE GP 200V 200MA SOT23-3
DIODE GEN PURP 250V 200MA SOD323
ON SOD323
DIODE GP 120V 200MA SOT23-3
DIODE SWITCHING 250V SC-74
DIODE SCHOTTKY 70V 70MA SOT23-3
DIODE GEN PURP 250V 200MA SOD323
DIODE SCHOTTKY 30V 200MA SOD323
DIODE GEN PURP 250V 200MA SOD523
DIODE GEN PURP 250V 200MA SOT723
DIODE GP 120V 200MA SOT23-3
DIODE GEN PURP 250V 200MA SOD323
DIODE GEN PURP 250V 200MA SOD323
DIODE SCHOTTKY 70V 70MA SOT23-3
DIODE GP 250V 200MA SOT23-3
NSVBAT54HT1 ON
NSVBAT54H - SCHOTTKY BARRIER DIO
DIODE GP 100V 200MA SC70-3
DIODE GP 250V 225MA SOT23-3
DIODE GP 200V 200MA SOT23-3
June 15th, 2026
June 11th, 2026
June 5th, 2026
May 28th, 2026
May 22th, 2026
May 12th, 2026
May 8th, 2026
April 28th, 2026
April 20th, 2026
April 17th, 2026
April 8th, 2026
March 31th, 2026
March 23th, 2026
March 20th, 2026
March 9th, 2026
March 4th, 2026
February 28th, 2026
February 3th, 2026
January 28th, 2026
January 19th, 2026
January 16th, 2026
January 9th, 2026
December 29th, 2025
December 25th, 2025
December 17th, 2025
December 10th, 2025
December 4th, 2025
November 25th, 2025
November 20th, 2025
November 11th, 2025
November 3th, 2025
October 30th, 2025
October 22th, 2025
October 16th, 2025
October 9th, 2025
September 28th, 2025
September 17th, 2025
September 9th, 2025
September 1th, 2025
August 25th, 2025
August 20th, 2025
July 3th, 2025
December 18th, 2024
June 21th, 2023
April 27th, 2023
July 1th, 2022
March 4th, 2021
September 10th, 2020
January 23th, 2020
0 Articles






June 25th, 2026
June 25th, 2026
June 25th, 2026
June 23th, 2026
NSVBAS21TMR6T1Gonsemi |
Quantity*
|
Target Price(USD)
|