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| Part Number: | MJH11021G |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor/onsemi |
| Part of Description: | TRANS PNP DARL 250V 15A TO247-3 |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $5.0551 |
| 10+ | $4.5365 |
| 100+ | $3.7167 |
| 500+ | $3.1639 |
| 1000+ | $2.6684 |
| 2000+ | $2.535 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 150mA, 15A |
| Transistor Type | PNP - Darlington |
| Supplier Device Package | TO-247-3 |
| Series | - |
| Power - Max | 150 W |
| Package / Case | TO-247-3 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Frequency - Transition | 3MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 10A, 5V |
| Current - Collector Cutoff (Max) | 1mA |
| Current - Collector (Ic) (Max) | 15 A |
| Base Product Number | MJH11021 |




The onsemi MJH11021G is a high-voltage, high-current PNP Darlington power transistor, engineered to deliver consistent, robust performance in demanding industrial and consumer electronics environments. Belonging to onsemi’s established portfolio of silicon power BJTs, the MJH11021G features a formidable combination of 250 V collector-emitter breakdown voltage and a continuous collector current rating of 15 A. Built in a TO-247-3 through-hole package, the device caters to power amplification, low-frequency switching, and motor control applications, where efficiency and reliability are essential.
The MJH11021G’s electrical profile is tailored for heavy-duty operation. Its DC current gain (hFE) reaches a minimum of 400 at a collector current of 10 A (VCE = 5 V), a result of its Darlington configuration. Such high gain allows for efficient drive with minimal base current, which is crucial when paralleling devices or working in circuits with limited drive strength.
Switching applications benefit from the low typical collector-emitter saturation voltage: 1.8 V at 10 A and a maximum of 4 V at the device’s full 15 A output (with IB = 150 mA), reducing conduction losses in power stages. A maximum transition frequency (fT) of 3 MHz enables operation in switching circuits that work below this range while yielding low switching losses for the majority of medium-speed PWM or amplifier applications.
The robust TO-247-3 (case 340L) package is a key asset for the MJH11021G’s thermal and mechanical performance. With a standardized lead form (pinout: Base, Collector, Emitter), the package facilitates sturdy through-hole mounting and provides a large exposed collector tab for efficient heat sinking. Mechanical dimensions are precisely controlled (case length: 20.32–21.08 mm; lead pitch: 5.45 mm BSC), ensuring compatibility with standard PCB layouts and thermal interface pads. These considerations aid procurement and assembly engineers when specifying heat sinks or designing assemblies for optimal device longevity.
The safe operating area (SOA) is central to employing the MJH11021G in high-reliability circuits. The device exposes clear guidelines for both forward-bias and reverse-bias operations. Its maximum power dissipation is 150 W at a case temperature of 25°C, derating as case temperature increases per the 1.2 W/°C curve. The device features a low junction-to-case thermal resistance (0.83°C/W), meaning that, with proper heat sinking, the package can sustain significant power levels without excessive junction temperature rise.
To avoid second breakdown and ensure that average junction temperature stays below 150°C, designers must adhere to the published SOA curves for both DC and pulsed operation, especially when driving inductive or high-inrush loads. Circuit designers are advised to implement clamping, snubbing, or active protective measures when managing high-voltage transients.
For engineers engaged in PWM motor drives, power inverters, or high-power line drivers, switching metrics are paramount. The MJH11021G demonstrates a typical storage time of 2.7 μs and a rise time of 0.5 μs (conditions: Vcc = 100 V, Ic = 10 A, IB = 100 mA), signifying its responsiveness for low-frequency to medium-frequency switching duties. A current-gain bandwidth product (fT) of 3 MHz dictates its performance ceiling in linear amplifier environments and is complemented by capacitive and small-signal gain specifications for modeling analog and digital power sections accurately.
To facilitate compliance with global manufacturing and environmental directives, the MJH11021G is RoHS3 compliant and REACH unaffected, minimizing environmental impact and easing certification processes for end equipment. The device’s MSL (moisture sensitivity level) is designated “Not Applicable,” underscoring its suitability for conventional through-hole soldering and underlining the absence of moisture-related reliability concerns in standard assembly and handling.
Engineers routinely select the MJH11021G for general-purpose power amplification, low-frequency switching, and rugged motor control circuitry. The Darlington topology is advantageous in stepper or brushed DC motor drivers, where high current gain allows for compact logic control without the need for complex drive electronics. In power amplifier outputs or relay/solenoid drivers, its high voltage rating supports wide safety margins and broad compatibility with 200–250 V power rails. Practical design should account for thermal interface management and ensure that base drive circuitry can supply at least 150 mA at full load to guarantee saturation.
Selecting alternatives or complementary products within the same family streamlines design validation and sourcing. The onsemi MJH11022 (NPN, 250 V, 15 A), MJH11017 (PNP, 150 V, 15 A), and MJH11019 (PNP, 200 V, 15 A) share similar electrical and package footprints, differing primarily in voltage polarity and breakdown ratings. For cross-referencing, the NPN versions—MJH11018, MJH11020, MJH11022—offer the same performance characteristics but cater to circuits that require NPN topology. When considering drop-in replacement, it is essential to ensure that substitute models meet or exceed the original’s collector-emitter voltage and current capacity, as well as share its TO-247 mechanical outline.
The onsemi MJH11021G stands out as a versatile, reliable choice for application engineers and procurement professionals seeking high-current, high-voltage PNP Darlington transistors for power control solutions. Its robust electrical characteristics, industry-standard footprint, and high compliance with modern environmental standards make it a prime candidate for new designs and lifecycle extension of existing platforms. By considering the package specifics, safe operating guidelines, and available equivalent models, engineers can confidently integrate the MJH11021G into performance-critical power circuits.
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