Exciting! Samsung announced mass production of 1TB eUFS2.1

Today, Samsung Electronics announced the official production of eUFS2.1 with 1TB of storage capacity. It uses Samsung's fifth-generation V-NAND technology.

In the same package size (11.5mm x 13.0mm), the 1TB eUFS solution doubles the capacity of the previous 512GB version, with 16 stacked Samsung's most advanced 512 Gigabit (Gb) V-NAND flash and new The proprietary flash controllers developed are combined. The new eUFS speeds up to 1,000MB/s per second, with random reads and writes of 58,000 IOPS and 50,000 IOPS, respectively, a 38% increase over 512GB.

Samsung plans to expand its fifth-generation 512Gb V-NAND production at its Pyeongtaek facility in South Korea in the first half of 2019 to fully meet the strong demand of global mobile device manufacturers for 1TB eUFS.

Some people may not know the power of Samsung's eUFS. Let's take a look at the official introduction:

Compared to eMMC, eUFS exhibits higher performance in terms of read speed and sequential read speeds of up to 40%. When optimizing USB 3.1 performance on systems (Gen1 5Gbps, Gen2 10Gbps), file copy operations can improve performance by 40%.

eUFS not only delivers faster speeds, but also reduces power consumption, thus providing better energy efficiency. In fact, under the same workload, UFS exhibits 8% higher battery life than eMMC. The actual working time for processing the same workload is reduced by 30%.

At present, eUFS has entered the 3.0 era. It will be launched in the first half of 2019. The first batch will have 128GB, 256GB, and 512GB storage capacities. The maximum data transfer rate is 2000MB/s, and 1TB storage capacity is shipped in 2021.

It is reported that the eUFS 3.0 specification was released at the beginning of last year, and the single-channel bandwidth has been increased to 11.6 Gbps. The theoretical maximum speed is about 2.9 GB/s, which is doubled compared with the UFS 2.1 commonly used in the flagship machine.