Infineon Technologies IPD50R280CEBTMA1

Product Summary

Infineon Technologies’ IPD50R280CEBTMA1 is an advanced N-channel MOSFET designed for high-efficiency power conversion in cost-sensitive consumer and lighting applications. Leveraging the brand’s CoolMOS™ CE superjunction technology, this power transistor is optimized for fast switching and low losses, making it particularly suitable for demanding power factor correction (PFC) stages, hard-switching PWM circuits, and resonant topologies. Delivering a 500V drain-source voltage rating and a continuous drain current of 13A (Tc), the IPD50R280CEBTMA1 is housed in the compact, surface-mount PG-TO252-3 package—ideal for space-constrained designs requiring high thermal performance and ruggedness.

Main Attributes of IPD50R280CEBTMA1 CoolMOS™ CE

The IPD50R280CEBTMA1 introduces several key innovations and engineering advantages:

Extremely low power losses, thanks to a very low figure-of-merit (FOM): Rds(on)Qg and Eoss. This ensures efficiency for both light-load and full-load operations.

Superior commutation ruggedness, decreasing the likelihood of device failure under demanding switching conditions.

Straightforward gate drive requirements, enabling wide compatibility with driver ICs and standard control circuits.

Environmentally friendly construction: Pb-free plating and halogen-free mold compound for compliance in global markets.

Qualified for standard-grade industrial, consumer, and lighting applications.

For engineers, these strengths translate into efficiency gains, increased reliability, and simplified design cycles. The device’s robust design supports practical paralleling, with Infineon recommending ferrite beads on the gate or the use of separate totem pole driver arrangements to ensure optimal switching behavior in multi-device configurations.

Absolute Maximum Ratings and Thermal Properties

A thorough understanding of the electrical and thermal limits is essential in MOSFET selection. The IPD50R280CEBTMA1’s ratings at 25°C (unless otherwise specified) include:

Drain-Source Voltage (Vds): 500V

Continuous Drain Current (Id): 13A at case temperature (Tc)

Power Dissipation: 92W (Tc)

The thermal performance of the PG-TO252-3 package is characterized by low thermal resistance, supporting efficient heat dissipation in high-power applications. The device’s maximum junction temperature (Tj) is rated at 150°C, with operation reliability dependent on duty cycle and pulse width for transient events. Careful consideration of board layout and heat sinking will allow full utilization of these ratings in real-world circuits.

Electrical Properties of CoolMOS™ CE IPD50R280CEBTMA1

The device’s electrical properties include both static and dynamic characteristics:

Low Rds(on): Enables minimal conduction loss, improving energy efficiency in both switching and continuous conduction modes.

Favorable gate charge (Qg): Ensures responsive switching while keeping drive power requirements modest.

Well-defined output and reverse diode characteristics: Supports robust performance in applications where body diode conduction and reverse recovery might impact efficiency and reliability.

These features, quantified in extensive datasheet tables, allow precise modeling and simulation in circuit design environments. Additionally, the capacitance characteristics (e.g., Coss, Crss) are tailored for fast switching performance without excessive electromagnetic emission.

Performance Charts and Technical Analysis

Infineon’s datasheet for the IPD50R280CEBTMA1 provides a range of characteristic curves, instrumental for engineers validating device integration:

Output current vs. drain-source voltage (Id vs. Vds), displayed at multiple gate voltages and temperatures, to clarify real-world conduction capabilities.

Rds(on) dependency on temperature and current, crucial for thermal modeling and worst-case analysis.

Gate charge and switching energy profiles, aiding in drive circuit design and efficiency calculations.

Capacitance and stored energy curves across operational voltages—key for optimizing snubber and EMI filtering.

By referencing these diagrams, designers can fine-tune their selections and predict system behavior under typical and extreme operating conditions.

Evaluation Circuits and Standard Measurements

To facilitate objective comparison and troubleshooting, the IPD50R280CEBTMA1 datasheet includes standard test circuit schematics used to characterize switching times, diode properties, and unclamped inductive load performance. These reference designs allow engineers to replicate critical tests, ensuring deployed systems meet baseline expectations for timing, efficiency, and robustness.

Package outlines for IPD50R280CEBTMA1

The MOSFET is supplied in the PG-TO252-3 (DPAK) surface-mount package. The package outline provides mechanical dimensions in both millimeters and inches, ensuring accuracy in PCB footprint generation and layout planning. The package, designed to balance compactness with excellent thermal performance, supports automated assembly flows common to high-volume consumer and lighting power supply manufacturing.

Common Use Cases and Suggested Applications

The IPD50R280CEBTMA1 is engineered for:

PFC circuits in desktop/fixed power supplies (e.g., Silverbox PC PSU)

Hard-switching power topologies commonly found in adapters, LCD/PDP TVs, and advanced indoor lighting systems

Resonant switching converters where efficiency and ruggedness are critical

In real engineering practice, designers should consider placing ferrite beads on the gate drive path for paralleling MOSFETs. Separating drive arrangements, such as totem pole circuits, can further optimize switching performance and minimize cross-conduction or oscillation risks in multi-device stages.

Possible Alternatives or Substitute Models for IPD50R280CEBTMA1

For engineers and procurement professionals evaluating alternatives, equivalent parts should be assessed based on voltage rating, Rds(on), thermal resistance, gate charge, and package compatibility. Within the Infineon portfolio, similar CoolMOS™ CE series models with matching voltage and current ratings may offer drop-in replacement options, provided the package, gate drive requirements, and thermal management features are aligned. Cross-referencing with other manufacturers’ superjunction MOSFETs requires careful validation of electrical and mechanical parameters to avoid system integration issues.

Conclusion

Infineon Technologies’ IPD50R280CEBTMA1 CoolMOS™ CE 500V N-Channel MOSFET stands out for its exceptional cost-to-performance ratio, low switching losses, and robust handling of real-world power stages. Purpose-built for efficient, high-volume consumer applications, it offers engineers the best-in-class efficiency and reliability demanded in modern designs. Its thorough datasheet and comprehensive performance documentation serve as invaluable resources for component selection and reliable circuit integration, helping design and purchasing teams make informed and confident choices in their high-voltage power conversion challenges.