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| Part Number: | FOD817D |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor/onsemi |
| Part of Description: | OPTOISOLATOR 5KV TRANSISTOR 4DIP |
| Datasheets: |
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| RoHs Status: | ROHS3 Compliant |
| Payment: | PayPal / Credit Card / T/T |
| Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
| Share: |
Ship From: Hong Kong
| Quantity | Unit Price |
|---|---|
| 1+ | $0.4639 |
| 10+ | $0.2839 |
| 100+ | $0.1631 |
| 1000+ | $0.1276 |
| 2000+ | $0.117 |
| 5000+ | $0.1064 |
| 10000+ | $0.0993 |
| 25000+ | $0.0957 |
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| Product Attribute | Attribute Value |
|---|---|
| Voltage - Output (Max) | 70V |
| Voltage - Isolation | 5000Vrms |
| Voltage - Forward (Vf) (Typ) | 1.2V |
| Vce Saturation (Max) | 200mV |
| Turn On / Turn Off Time (Typ) | - |
| Supplier Device Package | 4-DIP |
| Series | - |
| Rise / Fall Time (Typ) | 4µs, 3µs |
| Package / Case | 4-DIP (0.300', 7.62mm) |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Output Type | Transistor |
| Operating Temperature | -55°C ~ 110°C |
| Number of Channels | 1 |
| Mounting Type | Through Hole |
| Input Type | DC |
| Current Transfer Ratio (Min) | 300% @ 5mA |
| Current Transfer Ratio (Max) | 600% @ 5mA |
| Current - Output / Channel | 50mA |
| Current - DC Forward (If) (Max) | 50 mA |
| Base Product Number | FOD817 |




The FOD817D from onsemi is a highly reliable, 4-pin DIP optoisolator featuring a gallium arsenide infrared emitting diode coupled with a silicon phototransistor output. Known for its robust 5000 Vrms isolation voltage, this device is engineered to provide safe and effective isolation in a wide range of industrial and commercial electronic systems. Its high current transfer ratio (CTR) and adherence to established safety standards make it a key candidate for engineers seeking dependable signal isolation between system blocks with differing voltage potentials.
At the heart of the FOD817D onsemi optoisolator lies an optoelectronic coupling principle. The device integrates a gallium arsenide infrared LED as the input source and a silicon NPN phototransistor as the output detector within a compact dual in-line 4-pin package. When the LED is forward-biased, it emits infrared radiation that is sensed by the phototransistor. This setup allows electrical signals to be transmitted as light across an isolation barrier, thus providing galvanic isolation that prevents direct electrical continuity between the input and output sides. In practical terms, this protects sensitive circuitry from high voltage surges, noise, or ground loops, substantially enhancing system reliability and signal integrity.
The FOD817D onsemi optoisolator stands out with a high current transfer ratio (CTR) range of 300–600% (measured at IF=5mA, VCE=5V, TA=25°C). This high CTR enables the device to effectively drive downstream circuits with modest input current, making it suitable for interfaces where efficient signal propagation is critical. The minimum collector-emitter breakdown voltage (BVCEO) is specified at 70 V, offering resilience against voltage spikes. Environmental readiness is underscored by its compliance with Pb-free (lead-free) manufacturing standards, supporting sustainability and regulatory requirements. The device also boasts a robust isolation test voltage of 5000 Vrms for one minute, ensuring safe electrical separation even in demanding applications.
In alignment with stringent industry expectations, the FOD817D onsemi optoisolator is certified for safety by UL1577 with a 5000 VAC RMS isolation rating for one minute and complies with DIN EN/IEC 60747-5-5 standards. The optoisolator is classified as providing “safe electrical insulation” within the prescribed safety limits, with actual safety compliance in end systems necessitating appropriate protective circuit design. These certifications are vital for applications in industrial control, medical devices (excluding life-support), telecom infrastructure, and environments where operator safety and equipment protection against high voltages are paramount.
The FOD817D exhibits stable electrical characteristics across recommended operating ranges. At 25°C, the typical forward current versus forward voltage curve ensures predictable drive requirements for the integrated LED. Its collector-emitter saturation voltage remains low under specified conditions, facilitating efficient transistor switching with minimal signal loss. The optoisolator’s robust CTR remains consistent across variations in ambient temperature, a crucial factor for predictable performance in industrial and commercial environments. Further, its frequency response supports digital logic interfaces and moderate speed microprocessor input tasks.
The FOD817D is available in standardized PDIP4 (Plastic Dual Inline Package, 4 pins) variants, with typical package dimensions of 4.6 x 6.5 mm and a pin pitch of 2.54 mm. Multiple recognized case outlines (CASE 646CA, 646CD, 709AH) ensure compatibility with automated assembly and reflow processes. The compact form factor enables dense PCB layouts, and detailed mechanical drawings support precise land pattern design for reliable soldering and long-term operational stability.
Engineers often deploy the FOD817D onsemi optoisolator in demanding applications such as power supply regulator feedback circuits, galvanic isolation for microprocessor or digital logic inputs, and industrial signal monitoring where high voltage transients are anticipated. The device can also be found in AC line monitoring, sensor isolation, and telephone line interface circuits. Key design considerations include ensuring input drive current aligns with application requirements, validating isolation ratings in the end equipment, and accommodating temperature-induced parameter shifts. Careful PCB layout is recommended to leverage the full isolation rating and minimize parasitic coupling. The broad CTR window allows flexibility for various load conditions and interface circuits.
For projects requiring functionally similar devices, the onsemi FOD817 Series provides several alternatives distinguished by CTR bins: FOD817A (80–160%), FOD817B (130–260%), and FOD817C (200–400%). Selection can be based on the CTR range best suited to the application’s signal strength and interface requirements. Additionally, the FOD814 series (with AC input response capability) or optoisolators from other reputable manufacturers featuring comparable CTR, insulation voltage, and form factor may also serve as direct replacements, contingent on specific application needs and qualification processes.
The FOD817D onsemi optoisolator offers a highly effective and robust solution for designers seeking high-voltage isolation in compact, surface-mountable packages. Its strong CTR, adherence to international safety standards, and proven electrical performance make it a preferred choice across power, industrial, and signal interfacing contexts. By carefully considering its technical strengths and potential alternatives within the same family, product selection engineers and procurement specialists can confidently specify the FOD817D in their designs, ensuring system reliability and regulatory compliance.
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