On August 26, according to the Taiwan Media Economic Daily, Micron will spend NT$400 billion (about RMB 90.8 billion) to build two fabs next to the existing Taiwanese plant site to produce DRAM for the next generation of the latest process.
Micron's investment plan is to build two A4 and A5 fabs next to the current Zhongke plant. Among them, the A3 plant will be completed in August next year, and the latest 1z process trial production will be introduced in the fourth quarter of next year, thereby narrowing the gap with Samsung; the second phase A5 plant will gradually expand production capacity according to market demand, and the target monthly production capacity will be 60,000 pieces.
According to Taiwan's news, Micron's investment will be the second largest semiconductor investment case in Taiwan (after TSMC and Nanke expansion). If it is foreign, it is the biggest investment case.
The Taiwan branch confirmed the news that Micron expanded its A3 plant in Taichung and has entered the construction project. It is understood that Micron spent a lot of money to expand the factory during the cold wind period, mainly because optimistic about 5G will drive the development of artificial intelligence, Internet of Things and autopilot applications, driving demand for DRAM growth and early card slot business opportunities.
Recently, Micron's expansion of its Feb10 plant in Singapore has also been completed. Although it has not increased its production capacity, it will enable Micron to continue to produce multi-layer flash memory products with high process requirements.
Since memory prices have been falling all the way this year, both Samsung and SK Hynix have suspended their expansion plans. Micron's recent expansion plans have been launched simultaneously, with the goal of robbing market share through sufficient capacity and state-of-the-art processes in the early days of the memory industry.