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2019 Q2 Hynix will produce second generation 10nm process memory

  SK hynix recently revealed that the company will increase its first-generation 10 nanometer manufacturing process (ie 1X nm) DRAM production, and will begin selling its second-generation 10 nanometer manufacturing technology (also known as 1Y nm) in the second half of the year. Memory. Accelerating the transition to 10nm technology will allow the company to increase DRAM output, ultimately reducing costs and preparing for next-generation memory.


The first products manufactured using SK Hynix 1Y nm production technology will be its 8Gb DDR4-3200 memory chip. The manufacturer says it can reduce the chip size of 8Gb DDR4 devices by 20% and reduce its power consumption by 15% compared to similar devices fabricated using its 1X nm manufacturing technology. In addition, SK hynix's upcoming 8Gb DDR4-3200 chip has two important improvements: a 4-phase clocking scheme and Sense amplifier control technology.

Although these technologies are important even for DDR4 this year, it is said that SK hynix will use its 1Y nm manufacturing process to manufacture DDR5, LPDDR5 and GDDR6 DRAM. Therefore, Hynix must upgrade its second-generation 10 nanometer manufacturing technology as soon as possible to prepare for the future.