UCC21222-Q1
Automotive 4-A, 6-A, 3.0-kV(RMS) Isolated Dual-Channel Gate Driver With Dead Time
The UCC21222-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4-A peak-source and 6-A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.
The UCC21222-Q1 device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. 5ns delay matching performance allows two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through.
The input side is isolated from the two output drivers by a 3.0-kVRMS isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI).
Resistor programmable dead time gives the capability to adjust dead time for system constraints to improve efficiency and prevent output overlap. Other protection features include: Disable feature to shut down both outputs simultaneously when DIS is set high, integrated deglitch filter that rejects input transients shorter than 5-ns, and negative voltage handling for up to -2-V spikes for 200-ns on input and output pins. All supplies have UVLO protection.
- AEC Q100 Qualified with:
- Device Temperature Grade 1
- Device HBM ESD Classification Level H2
- Device CDM ESD Classification Level C6
- Junction Temperature Range –40°C to 150°C
- Resistor-Programmable Dead Time
- Universal: Dual Low-Side, Dual High-Side or Half-Bridge Driver
- 4-A Peak Source, 6-A Peak Sink Output
- 3-V to 5.5-V Input VCCI Range
- Up to 18-V VDD Output Drive Supply
- Switching Parameters:
- 28-ns Typical Propagation Delay
- 10-ns Minimum Pulse Width
- 5-ns Maximum Delay Matching
- 5.5-ns Maximum Pulse-Width Distortion
- TTL and CMOS Compatible Inputs
- Integrated Deglitch Filter
- I/Os withstand –2-V for 200 ns
- Common-Mode Transient Immunity (CMTI) Greater than 100-V/ns
- Isolation Barrier Life >40 Years
- Surge Immunity up to 7800-VPK
- Narrow Body SOIC-16 (D) Package
- Safety-Related Certifications (Planned):
- 4242-VPK Isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1
- 3000-VRMS Isolation for 1 Minute per UL 1577
- CSA Certification per IEC 60950-1, IEC 62368-1 and IEC 61010-1 End Equipment Standards
- CQC Certification per GB4943.1-2011
All trademarks are the property of their respective owners.
- AEC Q100 Qualified with:
- Device Temperature Grade 1
- Device HBM ESD Classification Level H2
- Device CDM ESD Classification Level C6
- Junction Temperature Range –40°C to 150°C
- Resistor-Programmable Dead Time
- Universal: Dual Low-Side, Dual High-Side or Half-Bridge Driver
- 4-A Peak Source, 6-A Peak Sink Output
- 3-V to 5.5-V Input VCCI Range
- Up to 18-V VDD Output Drive Supply
- Switching Parameters:
- 28-ns Typical Propagation Delay
- 10-ns Minimum Pulse Width
- 5-ns Maximum Delay Matching
- 5.5-ns Maximum Pulse-Width Distortion
- TTL and CMOS Compatible Inputs
- Integrated Deglitch Filter
- I/Os withstand –2-V for 200 ns
- Common-Mode Transient Immunity (CMTI) Greater than 100-V/ns
- Isolation Barrier Life >40 Years
- Surge Immunity up to 7800-VPK
- Narrow Body SOIC-16 (D) Package
- Safety-Related Certifications (Planned):
- 4242-VPK Isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1
- 3000-VRMS Isolation for 1 Minute per UL 1577
- CSA Certification per IEC 60950-1, IEC 62368-1 and IEC 61010-1 End Equipment Standards
- CQC Certification per GB4943.1-2011
All trademarks are the property of their respective owners.
|
Isolation Rating
(Vrms)
|
DIN V VDE V 0884-10 Transient Overvoltage Rating
(Vpk)
|
DIN V VDE V 0884-10 Working Voltage
(Vpk)
|
Number of Channels
(#)
|
Power Switch |
Enable/Disable Function |
Output VCC/VDD
(Max)
(V)
|
Output VCC/VDD
(Min)
(V)
|
Input VCC
(Min)
(V)
|
Input VCC
(Max)
(V)
|
Peak Output Current
(A)
|
Prop Delay
(ns)
|
Prop Delay
(Max)
(ns)
|
Operating Temperature Range
(C)
|
Package Group |
|
UCC21222-Q1 | UCC21520-Q1 |
3000
| 5700
|
4242
| 8000
|
990
| 2121
|
2
| 2
|
MOSFET IGBT
| MOSFET IGBT SiCFET
|
Disable
| Disable
|
18
| 25
|
9.2
| 9.2
|
3
| 3
|
5.5
| 18
|
6
| 6
|
25
| 19
|
40
| 30
|
-40 to 125
| -40 to 125
|
SOIC
| SOIC
|