TMUX154E

ESD-Protected, 2-Channel, 2:1 Switch, With Powered-off Protection

The TMUX154E is a high-bandwidth 2:1 switch specially designed for the switching of high-speed signals in applications with limited I/Os. The wide bandwidth (900 MHz) of this switch allows signals to pass with minimum edge and phase distortion. The switch is bidirectional and offers little or no attenuation of high-speed signals. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation.

The TMUX154E integrates ESD protection cells on all pins, is available in a tiny UQFN package (1.8 mm × 1.4 mm) or a VSSOP package, and is characterized over the free-air temperature range of –40°C to 85°C.

V_CC Operation at 3 V to 4.3 V
I/O Pins Can Tolerate up to 5.25 V
1.8-V Compatible Control Logic
Supports Powered-off Protection I/O Pins Hi-Z When V_CC = 0 V
R_ON = 10 Ω Maximum
ΔR_ON = 0.35 Ω Typical
C_io(ON) = 7.5 pF Typical
Low Power Consumption (1 uA Maximum)
–3-dB Bandwidth = 900 MHz Typical
Latch-Up Performance Exceeds
100 mA Per JESD 78, Class II ⁽¹⁾
ESD Performance Tested Per JESD 22
- 8000-V Human-Body Model
  (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
ESD Performance I/O Port to GND ⁽²⁾
- 15000-V Human-Body Model

⁽¹⁾Except EN and SEL Inputs

⁽²⁾High-voltage HBM is performed in addition to the standard HBM testing (A114-B, Class II) and applies to I/O ports tested with respect to GND only.

All trademarks are the property of their respective owners.

V_CC Operation at 3 V to 4.3 V
I/O Pins Can Tolerate up to 5.25 V
1.8-V Compatible Control Logic
Supports Powered-off Protection I/O Pins Hi-Z When V_CC = 0 V
R_ON = 10 Ω Maximum
ΔR_ON = 0.35 Ω Typical
C_io(ON) = 7.5 pF Typical
Low Power Consumption (1 uA Maximum)
–3-dB Bandwidth = 900 MHz Typical
Latch-Up Performance Exceeds
100 mA Per JESD 78, Class II ⁽¹⁾
ESD Performance Tested Per JESD 22
- 8000-V Human-Body Model
  (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
ESD Performance I/O Port to GND ⁽²⁾
- 15000-V Human-Body Model

⁽¹⁾Except EN and SEL Inputs

⁽²⁾High-voltage HBM is performed in addition to the standard HBM testing (A114-B, Class II) and applies to I/O ports tested with respect to GND only.

All trademarks are the property of their respective owners.


Configuration
Number of Channels (#)
Power Supply Type
Vss (Min) (V)
Vss (Max) (V)
Vdd (Min) (V)
Vdd (Max) (V)
Ron (Typ) (Ohms)
Bandwidth (MHz)
Rating
Operating Temperature Range (C)
Package Size: mm2:W x L (PKG)
Package Group
Supply Range (Max)
Ron (Max) (Ohms)
Supply Current (Typ) (uA)
Supply Current (Max) (uA)
Features
OFF-state leakage current (Max) (µA)
ON-state leakage current (Max) (µA)
Input/Output ON-state Capacitance (Typ) (pF)
Input/Output OFF-state Capacitance (Typ) (pF)
ESD Charged Device Model (kV)
ESD HBM (kV)
VIL (Max) (V)
VIH (Min) (V)

TMUX154E	TMUX1072	TMUX136
2:1 SPDT	2:1 SPDT	2:1 SPDT
2	2	2
Single	Single	Single
N/A	N/A	N/A
N/A	N/A	N/A
3	2.3	2.3
4.3	5.5	4.8
6	6	4.6
900	1200	6100
Catalog	Catalog	Catalog
-40 to 85	-40 to 125	-40 to 85
10UQFN: 3 mm2: 1.4 x 1.8(UQFN) 10VSSOP: 15 mm2: 4.9 x 3(VSSOP)	10VSSOP: 15 mm2: 4.9 x 3(VSSOP)	10UQFN: 3 mm2: 2 x 1.5(UQFN)
UQFN VSSOP	VSSOP	UQFN
4.3	3.2	4.8
10	15	7.5
1	75	30
	100	50
Powered off protection 1.8-V Compatible Control Inputs	Powered off protection 1.8-V Compatible Control Inputs Overvoltage Protection	Powered off protection 1.8-V Compatible Control Inputs
2		10
1		2
7.5	4.5	1.4
2	4.5	1.6
1	1	1
8	2	3.5
0.5	0.5	0.6
1.3	1.4	1.3