Common MOSFETs Used in Modern Power Electronics

Power MOSFETs control the flow of electrical power in converters, motor drives, power supplies, inverters, chargers, and many other electronic systems. However, MOSFETs with similar current or voltage ratings can perform very differently because of their on-resistance, gate requirements, switching speed, package, thermal limits, and semiconductor technology. This article examines ten common power MOSFETs, ranging from low-voltage silicon devices to high-voltage superjunction and silicon-carbide models.

Catalog

IRF3205

The IRF3205 is an N-channel enhancement-mode power MOSFET originally developed by International Rectifier and now supplied under Infineon Technologies. It uses advanced HEXFET technology to achieve low on-state resistance, fast switching, and strong avalanche capability.

The device has a maximum drain-to-source voltage of 55 V and a maximum on-resistance of 8 mΩ when driven with a 10 V gate signal. Its specified drain-current rating can reach 110 A at a case temperature of 25°C, but the practical current depends on cooling, PCB connections, and operating temperature.

The IRF3205 comes in a three-pin TO-220 package with gate, drain, and source terminals. Its low junction-to-case thermal resistance helps transfer heat to a suitable heatsink. It can operate at junction temperatures from −55°C to 175°C.

Specifications

Parameter	Value	Test Conditions
MOSFET type	N-channel HEXFET	Enhancement mode
Package	TO-220AB	Three-pin through-hole
Drain-to-source voltage, (VDSS)	55 V	Maximum
Continuous drain current, (ID)	110 A	(Tc=25°C), (VGS=10V); package limited to 75 A
Pulsed drain current, (IDM)	390 A	Junction-temperature limited
On-state resistance, (RDS(on))	8 mΩ maximum	(VGS=10V), (ID=62A)
Gate threshold voltage, (VGS(th))	2–4 V	(VDS=VGS), (ID=250µA)
Gate-to-source voltage, (VGS)	±20 V	Maximum
Power dissipation, (PD)	200 W	(Tc=25°C)
Total gate charge, (Qg)	146 nC maximum	(VDS=44V), (ID=62A), (VGS=10V)
Turn-on / turn-off delay	14 ns / 50 ns typical	(VDD=28V), (ID=62A)
Junction-to-case resistance, (RθJC)	0.75°C/W	Maximum
Junction temperature, (TJ)	−55 to +175°C	Operating range

IRLZ44N

The IRLZ44N is an N-channel, logic-level power MOSFET originally developed by International Rectifier and now supplied by Infineon Technologies. It uses fifth-generation HEXFET technology to provide low on-state resistance, fast switching, dynamic dv/dtcapability, and strong avalanche performance.

The device has a maximum drain-to-source voltage of 55 V and a continuous drain-current rating of up to 47 A at a controlled case temperature. Its maximum on-resistance is 22 mΩ with a 10 V gate signal and 35 mΩ at 4.5 V.

The IRLZ44N comes in a three-pin TO-220 package with gate, drain, and source terminals. Its logic-level gate allows effective control from approximately 4.5–5 V signals. However, reliable operation directly from 3.3 V is not guaranteed. The maximum junction temperature is 175°C.

Specifications

Parameter	Value	Test Conditions
MOSFET type	N-channel logic-level HEXFET	Enhancement mode
Package	TO-220AB	Three-pin through-hole
Drain-to-source voltage, (VDSS)	55 V	Maximum
Continuous drain current, (ID)	47 A	(TC=25°C), (VGS=10V)
Continuous drain current, (ID)	33 A	(TC=100°C), (VGS=10V)
Pulsed drain current, (IDM)	160 A	Junction-temperature limited
On-state resistance, (RDS(on))	22 mΩ maximum	(VGS=10V), (ID=25A)
On-state resistance, (RDS(on))	35 mΩ maximum	(VGS=4.5V), (ID=20A)
Gate threshold voltage, (VGS(th))	1–2 V	(VDS=VGS), (ID=250µA)
Gate-to-source voltage, (VGS)	±16 V	Maximum
Power dissipation, (PD)	110 W	(TC=25°C)
Total gate charge, (Qg)	48 nC maximum	(VGS=5V), (ID=25A)
Junction-to-case resistance, (RθJC)	1.4°C/W	maximum
Junction temperature, (TJ)	−55 to +175°C	Operating range

IRF540N

The IRF540N is an N-channel power MOSFET designed for controlling medium-voltage and high-current loads. It has a 100 V drain-to-source rating, a continuous drain-current rating of up to 33 A, and an on-resistance of approximately 40–44 mΩ, depending on the manufacturer.

This MOSFET provides fast switching, low on-resistance, avalanche capability, and a maximum junction temperature of 175°C. The device comes in a TO-220AB package, which allows straightforward heatsink mounting. It requires approximately 10 V at the gate for low-resistance operation and is not a logic-level MOSFET.

The IRF540N provides reliable power handling, simple gate control with a suitable driver, and relatively low conduction loss. It is commonly used in switching power supplies, DC–DC converters, motor-control circuits, battery-powered equipment, inverters, relay drivers, and power-switching stages. Actual current capability depends on gate voltage, switching frequency, temperature, and cooling.

Specifications

Parameter	Value	Test Conditions
MOSFET type	N-channel power MOSFET	Enhancement mode; not logic-level
Package	TO-220AB	Three-pin through-hole
Drain-to-source voltage, (VDSS)	100 V	Maximum
Continuous drain current, (ID)	33 A	(TC=25°C), (VGS=10V)
Continuous drain current, (ID)	23 A	(TC=100°C), (VGS=10V)
Pulsed drain current, (IDM)	110 A	Junction-temperature limited
On-state resistance, (RDS(on))	44 mΩ maximum	(VGS=10V), (ID=17A)
Gate threshold voltage, (VGS(th))	2–4 V	(VDS=VGS), (ID=250µA)
Gate-to-source voltage, (VGS)	±20 V	Maximum
Total gate charge, (Qg)	71 nC maximum	(VGS=10V), (VDS=80V), (ID=17A)
Power dissipation, (PD)	140 W	(TC=25°C)
Junction-to-case resistance, (RθJC)	1.1°C/W maximum	—
Junction temperature, (TJ)	−55 to +175°C	Operating range

STP55NF06

The STP55NF06 is a 60 V N-channel power MOSFET manufactured by STMicroelectronics using STripFET II technology. It supports a continuous drain current of up to 50 A and has a maximum on-state resistance of approximately 15 mΩ under the specified test conditions.

Its main features include fast switching, exceptional dv/dt capability, low gate charge, low input capacitance, and 100% avalanche testing. The device comes in a three-pin TO-220 package with gate, drain, and source terminals. Its metal tab is electrically connected to the drain.

The STP55NF06 offers low conduction loss, strong switching performance, and good thermal transfer when attached to a suitable heatsink. It is commonly used in DC–DC converters, switching power supplies, motor-control circuits, battery-powered systems, and other general power-switching stages. A suitable gate driver and proper cooling are required to achieve reliable performance at high current.

Specifications

Product Attribute	Value
Manufacturer	STMicroelectronics
Product category	Power MOSFET
Technology	Silicon
Mounting style	Through-hole
Package / case	TO-220-3
Transistor polarity	N-channel
Number of channels	1
Drain-to-source voltage, (VDSS)	60 V
Continuous drain current, (ID)	50 A
Drain-to-source on-resistance, (RDS(on))	18 mΩ maximum
Gate-to-source voltage, (VGS)	±20 V
Gate threshold voltage, (VGS(th))	2 V minimum
Total gate charge, (Qg)	44.5 nC typical
Power dissipation, (PD)	110 W
Minimum operating temperature	−55°C
Maximum operating temperature	+175°C
Channel mode	Enhancement
Technology family	STripFET II
Configuration	Single N-channel
Turn-on delay time	20 ns typical
Rise time	50 ns typical
Turn-off delay time	36 ns typical
Fall time	15 ns typical
Forward transconductance	18 S minimum
Packaging	Tube
RoHS compliance	Compliant

CSD19536KCS

The CSD19536KCS is a 100 V N-channel NexFET power MOSFET manufactured by Texas Instruments. It comes in a three-pin TO-220 plastic package and has a typical on-state resistance of approximately 2.3 mΩ, helping reduce conduction losses during high-current operation.

It offers ultra-low gate charge, low gate-to-drain charge, low thermal resistance, and avalanche-rated construction. The device also has lead-free terminal plating and complies with RoHS and halogen-free requirements.

The CSD19536KCS provides high efficiency, reduced heat generation, fast switching, and easier thermal management. Its low on-resistance makes it especially useful where conduction loss is a major concern. Common applications include secondary-side synchronous rectifiers, motor-control systems, DC–DC converters, battery-powered equipment, and other high-current power-conversion circuits. Proper gate driving, PCB connections, and heatsinking are necessary to achieve its rated performance.

Specifications

Product Attribute	Specification
Manufacturer	Texas Instruments
Product category	Power MOSFET
Technology	Silicon NexFET
MOSFET type	N-channel enhancement mode
Configuration	Single
Mounting style	Through-hole
Package / case	TO-220-3
Drain-to-source voltage, (VDS)	100 V
Continuous drain current, (ID)	259 A
Drain-to-source on-resistance, (RDS(on))	2.7 mΩ maximum
Gate-to-source voltage, (VGS)	±20 V
Gate threshold voltage, (VGS(th))	2.1 V typical
Total gate charge, (Qg)	118 nC typical
Power dissipation, (PD)	375 W
Forward transconductance, (gfs)	307 S minimum
Turn-on delay time	14 ns typical
Rise time	8 ns typical
Turn-off delay time	38 ns typical
Fall time	5 ns typical
Minimum operating temperature	−55°C
Maximum operating temperature	+175°C
Compliance	RoHS compliant
Packaging	Tube

NTMFS5C628NL

The NTMFS5C628NL is a single N-channel power MOSFET manufactured by onsemi. It has a 60 V drain-to-source rating, a continuous drain-current rating of up to 150 A under specified thermal conditions, and a maximum on-state resistance of 2.4 mΩ.

The device comes in a compact 5 × 6 mm surface-mount package. Its low on-resistance reduces conduction losses, while its low gate charge and capacitance help reduce gate-driver losses during switching. It supports a maximum junction temperature of 175°C and is lead-free and RoHS compliant.

The NTMFS5C628NL provides high current capability, efficient switching, and reduced PCB-space requirements. It is suitable for high-performance DC–DC converters, synchronous rectifiers, motor drives, point-of-load power modules, server power systems, and power tools. Practical current capability depends on the PCB copper area, switching conditions, airflow, and thermal management.

Specifications

Parameter	Value	Test Conditions
MOSFET type	Single N-channel	PowerTrench T6, logic-level
Package	SO-8FL / DFN-5	Power 56, 5 × 6 mm surface-mount
Drain-to-source breakdown voltage,	60 V minimum	-
Continuous drain current,	150 A	Adequate PCB cooling required
On-state resistance,	2.4 mΩ maximum	-
On-state resistance,	3.3 mΩ maximum	-
Gate-to-source voltage,	±20 V	Maximum
Gate threshold voltage,	2 V maximum	Low-current threshold condition
Total gate charge,	52 nC typical	-
Gate-to-drain charge,	6 nC typical	Datasheet measurement conditions
Input capacitance,	3,600 pF typical	-
Output capacitance,	1,500 pF typical	-
Reverse-transfer capacitance,	33 pF typical	-
Reverse-recovery charge,	60 nC typical	Datasheet recovery conditions
Power dissipation,	110 W maximum	Controlled case temperature
Junction temperature,	−55 to +175°C	Operating range
Environmental status	Pb-free and RoHS compliant	—

IPW60R041P6

The IPW60R041P6 is a 600 V N-channel superjunction power MOSFET manufactured by Infineon Technologies. It uses CoolMOS P6 technology to provide a maximum on-state resistance of 41 mΩ and a continuous drain-current rating of up to 77.5 A under controlled case-temperature conditions.

The device offers low conduction and switching losses, strong dv/dt capability, high commutation ruggedness, and simple gate driving. The device comes in a TO-247 package with lead-free plating and a halogen-free mould compound. It is also qualified for industrial use according to relevant JEDEC standards.

The IPW60R041P6 improves power-conversion efficiency while helping reduce heat, cooling requirements, and equipment size. It is commonly used in power-factor-correction stages, hard-switching PWM converters, resonant converters, computer power supplies, adapters, lighting equipment, server and telecommunications supplies, and uninterruptible power systems.

Specifications

Parameter	Value
MOSFET type	N-channel superjunction MOSFET
Technology	CoolMOS P6
Package	PG-TO-247-3
Drain-to-source voltage	600 V
Continuous drain current	77.5 A at 25°C
Continuous drain current	49 A at 100°C
Pulsed drain current	267 A
On-state resistance	37 mΩ typical; 41 mΩ maximum
Gate-to-source voltage	±20 V
Gate threshold voltage	3.5–4.5 V
Total gate charge	170 nC typical
Turn-on delay	29 ns typical
Rise time	27 ns typical
Turn-off delay	90 ns typical
Fall time	5 ns typical
Power dissipation	481 W maximum
Junction-to-case thermal resistance	0.26°C/W maximum
Junction temperature	−55 to +150°C
Environmental status	RoHS compliant, halogen-free

STW40N65M2

The STW40N65M2 is a 650 V N-channel power MOSFET manufactured by STMicroelectronics. It uses MDmesh M2 technology with an improved vertical structure and strip layout. The device supports a continuous drain current of 32 A and has a typical on-resistance of 87 mΩ, with a maximum of 99 mΩ.

Its main features include extremely low gate charge, an optimized output-capacitance profile, built-in Zener gate protection, and 100% avalanche testing. It comes in a three-pin TO-247 package that provides good heat transfer when properly attached to a heatsink.

The STW40N65M2 offers low conduction loss, efficient switching, strong voltage capability, and reliable operation under demanding switching conditions. It is suitable for high-efficiency converters, switching power supplies, power-factor-correction stages, inverters, and other high-voltage switching circuits.

Specifications

Parameter	Value
Manufacturer	STMicroelectronics
MOSFET type	N-channel enhancement-mode MOSFET
Technology	MDmesh M2 silicon
Mounting style	Through-hole
Package	TO-247-3
Number of channels	1
Drain-to-source voltage,	650 V
Continuous drain current,	32 A
On-state resistance,	87 mΩ typical; 99 mΩ maximum
Gate-to-source voltage,	±25 V
Gate threshold voltage,	2–4 V
Total gate charge,	56.5 nC typical
Turn-on delay time	15 ns typical
Rise time	10 ns typical
Turn-off delay time	96.5 ns typical
Fall time	12 ns typical
Power dissipation,	250 W
Operating temperature	−55 to +150°C
Avalanche capability	100% avalanche tested
Gate protection	Zener-protected

IMW120R045M1

The IMW120R045M1 is a 1,200 V N-channel silicon-carbide trench MOSFET manufactured by Infineon Technologies. It belongs to the CoolSiC family and provides a typical on-state resistance of 45 mΩ. The device comes in a three-pin TO-247 package and supports a continuous drain current of up to 52 A under controlled thermal conditions.

This device provide very low switching losses, a wide gate-voltage range, controllable dv/dt, 0 V turn-off capability, and a robust body diode. Its typical gate threshold voltage is 4.5 V, while normal turn-on operation requires a higher gate-drive voltage.

The IMW120R045M1 can improve efficiency, support higher switching frequencies, increase power density, and reduce cooling requirements. It is suitable for solar inverters, industrial power supplies, uninterruptible power systems, switched-mode power supplies, battery chargers, and other high-voltage power-conversion equipment.

Specifications

Parameter	Value
Manufacturer	Infineon Technologies
MOSFET type	N-channel CoolSiC trench MOSFET
Technology	Silicon carbide
Package	PG-TO-247-3
Drain-to-source voltage	1,200 V
Continuous drain current	52 A at 25°C; 36 A at 100°C
Pulsed drain current	130 A
On-state resistance	45 mΩ at 25°C
Continuous body-diode current	52 A at 25°C; 28 A at 100°C
Pulsed body-diode current	130 A
Transient gate-to-source voltage	−10 to +20 V
Recommended turn-on voltage	15 V
Recommended turn-off voltage	0 V
Short-circuit withstand time	3 µs
Power dissipation	228 W at 25°C; 114 W at 100°C
Junction temperature	−55 to +175°C
Storage temperature	−55 to +150°C
Junction-to-case thermal resistance	0.51 K/W typical; 0.66 K/W maximum
Junction-to-ambient thermal resistance	62 K/W maximum
Device marking	120M1045
Soldering temperature	260°C for 10 seconds
Maximum mounting torque	0.6 N·m with an M3 screw

C3M0075120D

The C3M0075120D is a 1,200 V N-channel silicon-carbide power MOSFET manufactured by Wolfspeed. It uses third-generation C3M SiC technology and provides an on-state resistance of approximately 75 mΩ. The device comes in a three-pin TO-247 package and operates across a −55°C to +150°C junction-temperature range.

Its main features include high blocking voltage, low on-resistance, low capacitance, fast switching, and a high-speed intrinsic body diode with low reverse-recovery charge. It is also halogen-free and RoHS compliant.

The C3M0075120D can increase conversion efficiency, support higher switching frequencies, improve power density, and reduce cooling requirements. It is commonly used in renewable-energy systems, EV battery chargers, high-voltage DC–DC converters, switched-mode power supplies, industrial motor drives, and energy-storage equipment. A suitable SiC gate driver, low-inductance PCB layout, and effective thermal management are required for reliable operation.

Specifications

Parameter	Value
Manufacturer	Wolfspeed
MOSFET type	N-channel enhancement-mode SiC MOSFET
Technology	C3M silicon-carbide technology
Mounting style	Through-hole
Package	TO-247-3
Drain-to-source voltage,	1,200 V
Continuous drain current,	30 A at
On-state resistance,	75 mΩ typical
Transient gate-to-source voltage	−8 to +19 V
Recommended gate-drive voltage	−4 V off; +15 V on
Gate threshold voltage,	4 V maximum
Total gate charge,	54 nC typical
Turn-on delay time	56 ns typical
Rise time	17 ns typical
Turn-off delay time	32 ns typical
Fall time	13 ns typical
Power dissipation,	113.6 W
Junction-to-case thermal resistance	Approximately 1.1°C/W maximum
Operating junction temperature	−55 to +150°C
Configuration	Single
Compliance	RoHS compliant and halogen-free
Packaging	Tube

Frequently Asked Questions [FAQ]

1. Why should the MOSFET voltage rating be higher than the circuit’s normal voltage?

Voltage spikes caused by wiring inductance, transformer leakage, and load switching can exceed the normal supply voltage. Designers commonly add a suitable voltage margin and verify transient behaviour through measurement or simulation.

2. Why is the datasheet drain-current rating often higher than the practical current?

The stated rating usually assumes a controlled case temperature and ideal cooling. Package leads, PCB traces, connectors, heatsinks, and rising on-resistance at high temperature normally reduce the safe continuous current.

3. Can gate-threshold voltage determine whether a MOSFET is fully turned on?

No. Gate-threshold voltage only indicates when a small drain current begins flowing. Full enhancement requires the gate voltage used for the datasheet’s specified on-resistance.

4. How does junction temperature affect MOSFET on-resistance?

On-resistance generally increases as junction temperature rises. This raises conduction loss and heat generation, so calculations should use the resistance expected at the maximum operating temperature.

5. Why does total gate charge matter when selecting a power MOSFET?

Higher gate charge requires more current from the gate driver and increases switching time and driver loss. Low gate charge is especially important at high switching frequencies.

6. Can silicon and SiC MOSFETs use the same gate driver?

Not automatically. SiC MOSFETs often require different turn-on and turn-off voltages, stronger current capability, better isolation, and tighter control of gate-loop inductance. The manufacturer’s gate-driving recommendations should be followed.

7. When is a surface-mount MOSFET better than a TO-220 or TO-247 device?

Surface-mount devices suit compact, automated, low-inductance designs. TO-220 and TO-247 packages are easier to heatsink and replace, but their longer leads can introduce more parasitic inductance.